Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching

Dallorto, Stefano; Goodyear, Andy; Cooke, Mike; Szornel, Julia E.; Ward, Craig; Kastl, Christoph; Schwartzberg, Adam; Rangelow, Ivo W.; Cabrini, Stefano

doi:10.1002/ppap.201900051

Title: Atomic layer etching of SiO₂ with Ar and CHF ₃ plasmas: A self-limiting process for aspect ratio independent etching

Abstract

With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing. In this work, a cyclical fluorocarbon/argon plasma is successfully used for patterning silicon oxide by ALE in a conventional inductively coupled plasma tool. The impact of plasma parameters and substrate electrode temperature on the etch performance is established. We achieve the self-limiting behavior of the etch process by modulating the substrate temperature. We find that at an electrode temperature of -10°C, etching stops after complete removal of the modified surface layer as the residual fluorine from the reactor chamber is minimized. Finally, we demonstrate the ability to achieve independent etching, which establishes the potential of the developed cyclic ALE process for small scale device patterning.

Authors:

^[1]; Goodyear, Andy ^[2]; Cooke, Mike ^[2]; Szornel, Julia E. ^[3]; Ward, Craig ^[2];

^[3];

^[4]; Cabrini, Stefano ^[3]

Ilmenau Univ. of Technology (Germany); Oxford Instruments Plasma Technology, Bristol (United Kingdom); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Oxford Instruments Plasma Technology, Bristol (United Kingdom)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Ilmenau Univ. of Technology (Germany)

Publication Date:: Wed May 22 00:00:00 EDT 2019

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1597717

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Plasma Processes and Polymers

Additional Journal Information:: Journal Volume: 16; Journal Issue: 9; Journal ID: ISSN 1612-8850

Publisher:: Wiley

Country of Publication:: United States

Language:: English

Subject:: 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; aspect ratio independent etching; atomic layer etching; ion energy distribution; plasma etching; self-limiting process

Citation Formats


                    Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., and Cabrini, Stefano. Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching.  United States: N. p., 2019. 
Web.  doi:10.1002/ppap.201900051.

Copy to clipboard


                    Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., & Cabrini, Stefano. Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching.  United States.  https://doi.org/10.1002/ppap.201900051

Copy to clipboard


                    Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., and Cabrini, Stefano. Wed .  
"Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching".  United States.  https://doi.org/10.1002/ppap.201900051.  https://www.osti.gov/servlets/purl/1597717.

Copy to clipboard


                    
@article{osti_1597717,

  title        = {Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching},

  author       = {Dallorto, Stefano and Goodyear, Andy and Cooke, Mike and Szornel, Julia E. and Ward, Craig and Kastl, Christoph and Schwartzberg, Adam and Rangelow, Ivo W. and Cabrini, Stefano},

  abstractNote = {With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing. In this work, a cyclical fluorocarbon/argon plasma is successfully used for patterning silicon oxide by ALE in a conventional inductively coupled plasma tool. The impact of plasma parameters and substrate electrode temperature on the etch performance is established. We achieve the self-limiting behavior of the etch process by modulating the substrate temperature. We find that at an electrode temperature of -10°C, etching stops after complete removal of the modified surface layer as the residual fluorine from the reactor chamber is minimized. Finally, we demonstrate the ability to achieve independent etching, which establishes the potential of the developed cyclic ALE process for small scale device patterning.},

  doi          = {10.1002/ppap.201900051},

  journal      = {Plasma Processes and Polymers},

  number       = 9,

  volume       = 16,

  place        = {United States},

  year         = {Wed May 22 00:00:00 EDT 2019},

  month        = {Wed May 22 00:00:00 EDT 2019}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1002/ppap.201900051

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 23 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
journal, January 2015

Faraz, T.; Roozeboom, F.; Knoops, H. C. M.
ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6
DOI: 10.1149/2.0051506jss

Atomic Layer Etching at the Tipping Point: An Overview
journal, January 2015

Oehrlein, G. S.; Metzler, D.; Li, C.
ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6
DOI: 10.1149/2.0061506jss

Overview of atomic layer etching in the semiconductor industry
journal, March 2015

Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2
DOI: 10.1116/1.4913379

Characterization of an asymmetric parallel plate radio-frequency discharge using a retarding field energy analyzer
journal, December 2011

Gahan, D.; Daniels, S.; Hayden, C.
Plasma Sources Science and Technology, Vol. 21, Issue 1
DOI: 10.1088/0963-0252/21/1/015002

Atomic Layer Etching: Rethinking the Art of Etch
journal, August 2018

Kanarik, Keren J.; Tan, Samantha; Gottscho, Richard A.
The Journal of Physical Chemistry Letters, Vol. 9, Issue 16
DOI: 10.1021/acs.jpclett.8b00997

The grand challenges of plasma etching: a manufacturing perspective
journal, June 2014

Lee, Chris G. N.; Kanarik, Keren J.; Gottscho, Richard A.
Journal of Physics D: Applied Physics, Vol. 47, Issue 27
DOI: 10.1088/0022-3727/47/27/273001

Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode
journal, March 2008

Gahan, D.; Dolinaj, B.; Hopkins, M. B.
Review of Scientific Instruments, Vol. 79, Issue 3
DOI: 10.1063/1.2890100

Principles of Plasma Discharges and Materials Processing
book, January 2005

Lieberman, Michael A.; Lichtenberg, Allan J.
DOI: 10.1002/0471724254

Microscopic uniformity in plasma etching
journal, September 1992

Gottscho, Richard A.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 5
DOI: 10.1116/1.586180

Fluorocarbon assisted atomic layer etching of SiO ₂ and Si using cyclic Ar/C ₄ F ₈ and Ar/CHF ₃ plasma
journal, January 2016

Metzler, Dominik; Li, Chen; Engelmann, Sebastian
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1
DOI: 10.1116/1.4935462

Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
journal, July 2016

Li, Chen; Metzler, Dominik; Lai, Chiukin Steven
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 4
DOI: 10.1116/1.4954961

Plasma processing of low-k dielectrics
journal, January 2013

Baklanov, Mikhail R.; de Marneffe, Jean-Francois; Shamiryan, Denis
Journal of Applied Physics, Vol. 113, Issue 4
DOI: 10.1063/1.4765297

Process requirements for continued scaling of CMOS—the need and prospects for atomic-level manipulation
journal, March 2002

Agnello, P. D.
IBM Journal of Research and Development, Vol. 46, Issue 2.3
DOI: 10.1147/rd.462.0317

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
journal, January 1999

Schaepkens, M.; Standaert, T. E. F. M.; Rueger, N. R.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 1
DOI: 10.1116/1.582108

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas
journal, November 2018

Huard, Chad M.; Sriraman, Saravanapriyan; Paterson, Alex
Journal of Vacuum Science & Technology A, Vol. 36, Issue 6
DOI: 10.1116/1.5049225

Effect of H2 addition on surface reactions during CF4/H2 plasma etching of silicon and silicon dioxide films
journal, September 1997

Marra, Denise C.; Aydil, Eray S.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 5
DOI: 10.1116/1.580762

Plasma atomic layer etching using conventional plasma equipment
journal, January 2009

Agarwal, Ankur; Kushner, Mark J.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 1
DOI: 10.1116/1.3021361

Realization of atomic layer etching of silicon
journal, November 1996

Athavale, Satish D.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 14, Issue 6
DOI: 10.1116/1.588651

Process Technology Variation
journal, August 2011

Kuhn, Kelin J.; Giles, Martin D.; Becher, David
IEEE Transactions on Electron Devices, Vol. 58, Issue 8
DOI: 10.1109/TED.2011.2121913

Evaluation of plasma deposited fluorocarbon films using experimental design methodology
journal, December 2005

Wei, Ta-Chin; Liu, Chi-Hung
Surface and Coatings Technology, Vol. 200, Issue 7
DOI: 10.1016/j.surfcoat.2005.04.028

Reaction of fluorine atoms with SiO ₂
journal, October 1979

Flamm, D. L.; Mogab, C. J.; Sklaver, E. R.
Journal of Applied Physics, Vol. 50, Issue 10
DOI: 10.1063/1.325755

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects
journal, October 2014

King, Sean W.
ECS Journal of Solid State Science and Technology, Vol. 4, Issue 1
DOI: 10.1149/2.0051501jss

A Review of SiO[sub 2] Etching Studies in Inductively Coupled Fluorocarbon Plasmas
journal, January 2001

Schaepkens, Marc; Oehrlein, Gottlieb S.
Journal of The Electrochemical Society, Vol. 148, Issue 3
DOI: 10.1149/1.1348260

Fluorocarbon assisted atomic layer etching of SiO ₂ using cyclic Ar/C ₄ F ₈ plasma
journal, March 2014

Metzler, Dominik; Bruce, Robert L.; Engelmann, Sebastian
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2
DOI: 10.1116/1.4843575

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO ₂
journal, August 2017

Gasvoda, Ryan J.; van de Steeg, Alex W.; Bhowmick, Ranadeep
ACS Applied Materials & Interfaces, Vol. 9, Issue 36
DOI: 10.1021/acsami.7b08234

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
journal, January 2004

Standaert, T. E. F. M.; Hedlund, C.; Joseph, E. A.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, Issue 1
DOI: 10.1116/1.1626642

Molecular dynamics simulation of atomic layer etching of silicon
journal, May 1995

Athavale, Satish D.; Economou, Demetre J.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, Issue 3
DOI: 10.1116/1.579659

Aspect Ratio Independent Etching: Fact or Fantasy?
journal, April 1995

Iii, Andrew D. Bailey; Gottscho, Richard A.
Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 4B
DOI: 10.1143/JJAP.34.2083

Low‐temperature reactive ion etching and microwave plasma etching of silicon
journal, February 1988

Tachi, Shinichi; Tsujimoto, Kazunori; Okudaira, Sadayuki
Applied Physics Letters, Vol. 52, Issue 8, p. 616-618
DOI: 10.1063/1.99382

Plasma etching: Yesterday, today, and tomorrow
journal, September 2013

Donnelly, Vincent M.; Kornblit, Avinoam
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5
DOI: 10.1116/1.4819316

Similar Records in DOE PAGES and OSTI.GOV collections:

Fluorocarbon assisted atomic layer etching of SiO₂ and Si using cyclic Ar/C₄F₈ and Ar/CHF₃ plasma

Journal Article Metzler, Dominik ; Li, Chen ; Engelmann, Sebastian ; ... - Journal of Vacuum Science and Technology A

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C₄F₈ ALE based on steady-state Ar plasma in conjunction with periodic, precise C₄F₈ injection and synchronized plasma-based low energy Ar⁺ ion bombardment has been established for SiO₂.¹ In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF₃ as a precursor is examined and compared to C₄F₈. CHF₃ is shown to enable selective SiO₂/Si etching using a fluorocarbon (FC) film build up. Othermore »« less
Cited by 58
https://doi.org/10.1116/1.4935462

Full Text Available
Fluorocarbon assisted atomic layer etching of SiO{sub 2} and Si using cyclic Ar/C{sub 4}F{sub 8} and Ar/CHF{sub 3} plasma

Journal Article Metzler, Dominik ; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu ; Li, Chen ; ... - Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and comparedmore »« less
https://doi.org/10.1116/1.4935462
Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C₄F₈ and Ar/CHF₃ Plasma

Journal Article Metzler, Dominik ; Li, Chen ; Engelmann, Sebastian ; ... - Journal of Chemical Physics

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO₂ and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C₄F₈ and CHF₃), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32, 020603 (2014), and D.more »« less
Cited by 29
https://doi.org/10.1063/1.4961458

Full Text Available
Investigation of thin oxide layer removal from Si substrates using an SiO₂ atomic layer etching approach: the importance of the reactivity of the substrate

Journal Article Metzler, Dominik ; Li, Chen ; Lai, C. Steven ; ... - Journal of Physics. D, Applied Physics

The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic ALE approach when used for removal of native oxide SiO₂ from a Si substrate did not remove native oxide to the extent required. This is due to the high reactivity of the silicon substrate during the low-energy (<40 eV) ion bombardment phase of the cyclicmore »« less
Cited by 19
https://doi.org/10.1088/1361-6463/aa71f1

Full Text Available
Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

Journal Article Li, Chen ; Metzler, Dominik ; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu ; ... - Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} frommore »« less
https://doi.org/10.1116/1.4954961

Similar Records

Title: Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching

Abstract

Citation Formats

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition? journal, January 2015

Atomic Layer Etching at the Tipping Point: An Overview journal, January 2015

Overview of atomic layer etching in the semiconductor industry journal, March 2015

Characterization of an asymmetric parallel plate radio-frequency discharge using a retarding field energy analyzer journal, December 2011

Atomic Layer Etching: Rethinking the Art of Etch journal, August 2018

The grand challenges of plasma etching: a manufacturing perspective journal, June 2014

Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode journal, March 2008

Principles of Plasma Discharges and Materials Processing book, January 2005

Microscopic uniformity in plasma etching journal, September 1992

Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4 F 8 and Ar/CHF 3 plasma journal, January 2016

Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4 journal, July 2016

Plasma processing of low-k dielectrics journal, January 2013

Process requirements for continued scaling of CMOS—the need and prospects for atomic-level manipulation journal, March 2002

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism journal, January 1999

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas journal, November 2018

Effect of H2 addition on surface reactions during CF4/H2 plasma etching of silicon and silicon dioxide films journal, September 1997

Plasma atomic layer etching using conventional plasma equipment journal, January 2009

Realization of atomic layer etching of silicon journal, November 1996

Process Technology Variation journal, August 2011

Evaluation of plasma deposited fluorocarbon films using experimental design methodology journal, December 2005

Reaction of fluorine atoms with SiO 2 journal, October 1979

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects journal, October 2014

A Review of SiO[sub 2] Etching Studies in Inductively Coupled Fluorocarbon Plasmas journal, January 2001

Fluorocarbon assisted atomic layer etching of SiO 2 using cyclic Ar/C 4 F 8 plasma journal, March 2014

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO 2 journal, August 2017

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide journal, January 2004

Molecular dynamics simulation of atomic layer etching of silicon journal, May 1995

Aspect Ratio Independent Etching: Fact or Fantasy? journal, April 1995

Low‐temperature reactive ion etching and microwave plasma etching of silicon journal, February 1988

Plasma etching: Yesterday, today, and tomorrow journal, September 2013

Title: Atomic layer etching of SiO₂ with Ar and CHF ₃ plasmas: A self-limiting process for aspect ratio independent etching

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
journal, January 2015

Atomic Layer Etching at the Tipping Point: An Overview
journal, January 2015

Overview of atomic layer etching in the semiconductor industry
journal, March 2015

Characterization of an asymmetric parallel plate radio-frequency discharge using a retarding field energy analyzer
journal, December 2011

Atomic Layer Etching: Rethinking the Art of Etch
journal, August 2018

The grand challenges of plasma etching: a manufacturing perspective
journal, June 2014

Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode
journal, March 2008

Principles of Plasma Discharges and Materials Processing
book, January 2005

Microscopic uniformity in plasma etching
journal, September 1992

Fluorocarbon assisted atomic layer etching of SiO ₂ and Si using cyclic Ar/C ₄ F ₈ and Ar/CHF ₃ plasma
journal, January 2016

Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
journal, July 2016

Plasma processing of low-k dielectrics
journal, January 2013

Process requirements for continued scaling of CMOS—the need and prospects for atomic-level manipulation
journal, March 2002

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
journal, January 1999

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas
journal, November 2018

Effect of H2 addition on surface reactions during CF4/H2 plasma etching of silicon and silicon dioxide films
journal, September 1997

Plasma atomic layer etching using conventional plasma equipment
journal, January 2009

Realization of atomic layer etching of silicon
journal, November 1996

Process Technology Variation
journal, August 2011

Evaluation of plasma deposited fluorocarbon films using experimental design methodology
journal, December 2005

Reaction of fluorine atoms with SiO ₂
journal, October 1979

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects
journal, October 2014

A Review of SiO[sub 2] Etching Studies in Inductively Coupled Fluorocarbon Plasmas
journal, January 2001

Fluorocarbon assisted atomic layer etching of SiO ₂ using cyclic Ar/C ₄ F ₈ plasma
journal, March 2014

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO ₂
journal, August 2017

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
journal, January 2004

Molecular dynamics simulation of atomic layer etching of silicon
journal, May 1995

Aspect Ratio Independent Etching: Fact or Fantasy?
journal, April 1995

Low‐temperature reactive ion etching and microwave plasma etching of silicon
journal, February 1988

Plasma etching: Yesterday, today, and tomorrow
journal, September 2013