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Title: Atomic layer etching of SiO 2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching

Abstract

With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing. In this work, a cyclical fluorocarbon/argon plasma is successfully used for patterning silicon oxide by ALE in a conventional inductively coupled plasma tool. The impact of plasma parameters and substrate electrode temperature on the etch performance is established. We achieve the self-limiting behavior of the etch process by modulating the substrate temperature. We find that at an electrode temperature of -10°C, etching stops after complete removal of the modified surface layer as the residual fluorine from the reactor chamber is minimized. Finally, we demonstrate the ability to achieve independent etching, which establishes the potential of the developed cyclic ALE process for small scale device patterning.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [2]; ORCiD logo [3]; ORCiD logo [3]; ORCiD logo [4];  [3]
  1. Ilmenau Univ. of Technology (Germany); Oxford Instruments Plasma Technology, Bristol (United Kingdom); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Oxford Instruments Plasma Technology, Bristol (United Kingdom)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  4. Ilmenau Univ. of Technology (Germany)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1597717
Grant/Contract Number:  
[AC02-05CH11231]
Resource Type:
Accepted Manuscript
Journal Name:
Plasma Processes and Polymers
Additional Journal Information:
[ Journal Volume: 16; Journal Issue: 9]; Journal ID: ISSN 1612-8850
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; aspect ratio independent etching; atomic layer etching; ion energy distribution; plasma etching; self-limiting process

Citation Formats

Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., and Cabrini, Stefano. Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching. United States: N. p., 2019. Web. doi:10.1002/ppap.201900051.
Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., & Cabrini, Stefano. Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching. United States. doi:10.1002/ppap.201900051.
Dallorto, Stefano, Goodyear, Andy, Cooke, Mike, Szornel, Julia E., Ward, Craig, Kastl, Christoph, Schwartzberg, Adam, Rangelow, Ivo W., and Cabrini, Stefano. Wed . "Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching". United States. doi:10.1002/ppap.201900051.
@article{osti_1597717,
title = {Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching},
author = {Dallorto, Stefano and Goodyear, Andy and Cooke, Mike and Szornel, Julia E. and Ward, Craig and Kastl, Christoph and Schwartzberg, Adam and Rangelow, Ivo W. and Cabrini, Stefano},
abstractNote = {With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing. In this work, a cyclical fluorocarbon/argon plasma is successfully used for patterning silicon oxide by ALE in a conventional inductively coupled plasma tool. The impact of plasma parameters and substrate electrode temperature on the etch performance is established. We achieve the self-limiting behavior of the etch process by modulating the substrate temperature. We find that at an electrode temperature of -10°C, etching stops after complete removal of the modified surface layer as the residual fluorine from the reactor chamber is minimized. Finally, we demonstrate the ability to achieve independent etching, which establishes the potential of the developed cyclic ALE process for small scale device patterning.},
doi = {10.1002/ppap.201900051},
journal = {Plasma Processes and Polymers},
number = [9],
volume = [16],
place = {United States},
year = {2019},
month = {5}
}

Journal Article:
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