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Title: In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1];  [1]
  1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1592193
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 115 Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Li, Bingjun, Nami, Mohsen, Wang, Sizhen, and Han, Jung. In situ and selective area etching of GaN by tertiarybutylchloride (TBCl). United States: N. p., 2019. Web. doi:10.1063/1.5120420.
Li, Bingjun, Nami, Mohsen, Wang, Sizhen, & Han, Jung. In situ and selective area etching of GaN by tertiarybutylchloride (TBCl). United States. doi:10.1063/1.5120420.
Li, Bingjun, Nami, Mohsen, Wang, Sizhen, and Han, Jung. Mon . "In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)". United States. doi:10.1063/1.5120420.
@article{osti_1592193,
title = {In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)},
author = {Li, Bingjun and Nami, Mohsen and Wang, Sizhen and Han, Jung},
abstractNote = {},
doi = {10.1063/1.5120420},
journal = {Applied Physics Letters},
number = 16,
volume = 115,
place = {United States},
year = {2019},
month = {10}
}

Journal Article:
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