A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

Li, Bingjun; Wang, Sizhen; Nami, Mohsen; Han, Jung

doi:10.1016/j.jcrysgro.2020.125492

Title: A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

Journal Article · 16 January 2020 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2020.125492 · OSTI ID:1799105

^[1]; Wang, Sizhen ^[2]; Nami, Mohsen ^[2]; Han, Jung ^[2]

Yale Univ., New Haven, CT (United States); Yale Univ., New Haven, CT (United States)
Yale Univ., New Haven, CT (United States)

This paper reports a study of the effect of NH₃ flow rate and reactor temperature on the tertiarybutylchloride (TBCl) etching of patterned GaN-on-sapphire templates. It is found that a reduced NH₃ flow rate and an elevated reactor temperature can eliminate islands or dots on the surface, while at the same time, enhance the etching around dislocations. TBCl etching was also performed on planar bulk GaN templates with much lower dislocation density. We find an atomically flat and layer-by-layer etching behavior within the region free of dislocations. Surface kinetics analysis reveals a short diffusion length of etching products. Room-temperature photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS) measurements confirm that TBCl etching is capable of removing the damage and impurities induced by plasma etching without introducing additional damage.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE; USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000871

OSTI ID:: 1799105

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 534; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (21)

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures Koleske, D. D.; Wickenden, A. E.; Henry, R. L. Journal of Crystal Growth, Vol. 223, Issue 4 https://doi.org/10.1016/S0022-0248(01)00617-0	journal	March 2001
Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor Franke, D.; Sabelfeld, N.; Ebert, W. Journal of Crystal Growth, Vol. 248 https://doi.org/10.1016/S0022-0248(02)02046-8	journal	February 2003
Ga assisted in situ etching of AlGaInAs and InGaAsP multi quantum well structures using tertiarybutylchloride Codato, S.; Campi, R.; Rigo, C. Journal of Crystal Growth, Vol. 282, Issue 1-2 https://doi.org/10.1016/j.jcrysgro.2005.04.080	journal	August 2005
In-situ decomposition and etching of AlN and GaN in the presence of HCl Fahle, Dirk; Kruecken, Thomas; Dauelsberg, Martin Journal of Crystal Growth, Vol. 393 https://doi.org/10.1016/j.jcrysgro.2013.09.025	journal	May 2014
Inductively coupled plasma etching of GaN Shul, R. J.; McClellan, G. B.; Casalnuovo, S. A. Applied Physics Letters, Vol. 69, Issue 8 https://doi.org/10.1063/1.117077	journal	August 1996
Characterization of threading dislocations in GaN epitaxial layers Hino, T.; Tomiya, S.; Miyajima, T. Applied Physics Letters, Vol. 76, Issue 23 https://doi.org/10.1063/1.126666	journal	June 2000
Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition Fang, Z. -Q.; Look, D. C.; Wang, X. -L. Applied Physics Letters, Vol. 82, Issue 10 https://doi.org/10.1063/1.1560562	journal	March 2003
AlGaN/GaN current aperture vertical electron transistors with regrown channels Ben-Yaacov, Ilan; Seck, Yee-Kwang; Mishra, Umesh K. Journal of Applied Physics, Vol. 95, Issue 4 https://doi.org/10.1063/1.1641520	journal	February 2004
Step bunching process induced by the flow of steps at the sublimated crystal surface Załuska‐Kotur, Magdalena A.; Krzyżewski, Filip Journal of Applied Physics, Vol. 111, Issue 11 https://doi.org/10.1063/1.4728233	journal	June 2012
In situ and selective area etching of GaN by tertiarybutylchloride (TBCl) Li, Bingjun; Nami, Mohsen; Wang, Sizhen Applied Physics Letters, Vol. 115, Issue 16 https://doi.org/10.1063/1.5120420	journal	October 2019
Rate equation approaches to thin film nucleation kinetics Venables, J. A. Philosophical Magazine, Vol. 27, Issue 3 https://doi.org/10.1080/14786437308219242	journal	March 1973
Deep level characteristics in n-GaN with inductively coupled plasma damage Cho, H. K.; Khan, F. A.; Adesida, I. Journal of Physics D: Applied Physics, Vol. 41, Issue 15 https://doi.org/10.1088/0022-3727/41/15/155314	journal	July 2008
Point defects and dopant diffusion in silicon Fahey, P. M.; Griffin, P. B.; Plummer, J. D. Reviews of Modern Physics, Vol. 61, Issue 2 https://doi.org/10.1103/RevModPhys.61.289	journal	April 1989
Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer Chowdhury, Srabanti; Swenson, Brian L.; Mishra, Umesh K. IEEE Electron Device Letters, Vol. 29, Issue 6 https://doi.org/10.1109/LED.2008.922982	journal	June 2008
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Zhang, Yuhao; Liu, Zhihong; Tadjer, Marko J. IEEE Electron Device Letters, Vol. 38, Issue 8 https://doi.org/10.1109/LED.2017.2720689	journal	August 2017
High-power 4H-SiC JBS rectifiers Singh, R.; Capell, D. C.; Hefner, A. R. IEEE Transactions on Electron Devices, Vol. 49, Issue 11 https://doi.org/10.1109/TED.2002.804715	journal	November 2002
Superjunction Power Devices, History, Development, and Future Prospects Udrea, Florin; Deboy, Gerald; Fujihira, Tatsuhiko IEEE Transactions on Electron Devices, Vol. 64, Issue 3 https://doi.org/10.1109/TED.2017.2658344	journal	March 2017
Chemical Beam Etching of GaAs Using a Novel Precursor of Tertiarybutylchloride (TBCl) Kondow, Masahiko; Shi, Binqiang; Tu, Charles W. Japanese Journal of Applied Physics, Vol. 38, Issue Part 2, No. 6A/B https://doi.org/10.1143/JJAP.38.L617	journal	June 1999
Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate Kojima, Kazunobu; Takashima, Shinya; Edo, Masaharu Applied Physics Express, Vol. 10, Issue 6 https://doi.org/10.7567/APEX.10.061002	journal	May 2017
Suppression of plasma-induced damage on GaN etched by a Cl 2 plasma at high temperatures Liu, Zecheng; Pan, Jialin; Kako, Takashi Japanese Journal of Applied Physics, Vol. 54, Issue 6S2 https://doi.org/10.7567/JJAP.54.06GB04	journal	June 2015
Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl 2 plasma etching of GaN Liu, Zecheng; Pan, Jialin; Asano, Atsuki Japanese Journal of Applied Physics, Vol. 56, Issue 2 https://doi.org/10.7567/JJAP.56.026502	journal	January 2017

Similar Records

In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)

Journal Article · 2019 · Applied Physics Letters · OSTI ID:1799106

Li, Bingjun; Nami, Mohsen; Wang, Sizhen; +1 more

Effects of H{sub 2}/NH{sub 3} flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD [Metal Organic Chemical Vapor Deposition]

Journal Article · 1999 · Journal of Electronic Materials · OSTI ID:20000470

Yang, C C; Koh, P L; Wu, M C; +2 more

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

Journal Article · 2021 · ACS Applied Materials and Interfaces · OSTI ID:1871969

Li, Bingjun; Wang, Sizhen; Nami, Mohsen; +2 more

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Title: A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

Citation Formats

References (21)

Similar Records

Related Subjects