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Title: Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Abstract

Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. Historically, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. In this work, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS 2 shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS 2, whose orientation – rotated 30° against the underlying SnS 2 crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [3]; ORCiD logo [1]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Aalto Univ., Otaniemi (Finland)
  3. Univ. of Wyoming, Laramie, WY (United States)
Publication Date:
Research Org.:
Univ. of Nebraska, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1579958
Grant/Contract Number:  
SC0016343
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Related Information: https://static-content.springer.com/esm/art%3A10.1038%2Fs41467-019-13488-5/MediaObjects/41467_2019_13488_MOESM1_ESM.pdf; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sutter, Peter, Ibragimova, Rina, Komsa, Hannu-Pekka, Parkinson, Bruce A., and Sutter, Eli. Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations. United States: N. p., 2019. Web. doi:10.1038/s41467-019-13488-5.
Sutter, Peter, Ibragimova, Rina, Komsa, Hannu-Pekka, Parkinson, Bruce A., & Sutter, Eli. Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations. United States. doi:10.1038/s41467-019-13488-5.
Sutter, Peter, Ibragimova, Rina, Komsa, Hannu-Pekka, Parkinson, Bruce A., and Sutter, Eli. Wed . "Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations". United States. doi:10.1038/s41467-019-13488-5. https://www.osti.gov/servlets/purl/1579958.
@article{osti_1579958,
title = {Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations},
author = {Sutter, Peter and Ibragimova, Rina and Komsa, Hannu-Pekka and Parkinson, Bruce A. and Sutter, Eli},
abstractNote = {Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. Historically, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. In this work, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS2 shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS2, whose orientation – rotated 30° against the underlying SnS2 crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis.},
doi = {10.1038/s41467-019-13488-5},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {2019},
month = {12}
}

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