Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Sutter, Peter; Ibragimova, Rina; Komsa, Hannu-Pekka; Parkinson, Bruce A.; Sutter, Eli

doi:10.1038/s41467-019-13488-5

Title: Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Abstract

Abstract Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. To date, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. Here, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS ₂ shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS ₂ , whose orientation – rotated 30° against the underlying SnS ₂ crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis.

Authors:

;

; Parkinson, Bruce A.;

Publication Date:: Wed Dec 04 00:00:00 EST 2019

Research Org.:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Org.:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1619600

Alternate Identifier(s):: OSTI ID: 1579958

Grant/Contract Number:: SC0016343

Resource Type:: Published Article

Journal Name:: Nature Communications

Additional Journal Information:: Journal Name: Nature Communications Journal Volume: 10 Journal Issue: 1; Journal ID: ISSN 2041-1723

Publisher:: Nature Publishing Group

Country of Publication:: United Kingdom

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Sutter, Peter, Ibragimova, Rina, Komsa, Hannu-Pekka, Parkinson, Bruce A., and Sutter, Eli. Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations.  United Kingdom: N. p., 2019. 
Web.  doi:10.1038/s41467-019-13488-5.

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                    Sutter, Peter, Ibragimova, Rina, Komsa, Hannu-Pekka, Parkinson, Bruce A., & Sutter, Eli. Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations.  United Kingdom.  https://doi.org/10.1038/s41467-019-13488-5

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                    Sutter, Peter, Ibragimova, Rina, Komsa, Hannu-Pekka, Parkinson, Bruce A., and Sutter, Eli. Wed .  
"Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations".  United Kingdom.  https://doi.org/10.1038/s41467-019-13488-5.

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@article{osti_1619600,

  title        = {Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations},

  author       = {Sutter, Peter and Ibragimova, Rina and Komsa, Hannu-Pekka and Parkinson, Bruce A. and Sutter, Eli},

  abstractNote = {Abstract Vertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. To date, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. Here, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS 2 shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS 2 , whose orientation – rotated 30° against the underlying SnS 2 crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis.},

  doi          = {10.1038/s41467-019-13488-5},

  journal      = {Nature Communications},

  number       = 1,

  volume       = 10,

  place        = {United Kingdom},

  year         = {Wed Dec 04 00:00:00 EST 2019},

  month        = {Wed Dec 04 00:00:00 EST 2019}

}

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Title: Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

Abstract

Citation Formats

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Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures journal, September 2017

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Vertical and in-plane heterostructures from WS2/MoS2 monolayers journal, September 2014

Chiral twisted van der Waals nanowires journal, April 2019

Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS journal, October 2015

Microscopy of Graphene Growth, Processing, and Properties journal, April 2013

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers journal, February 2019

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Direct Measurement of the Tunable Electronic Structure of Bilayer MoS ₂ by Interlayer Twist
journal, January 2016

Twistronics: Manipulating the electronic properties of two-dimensional layered structures through their twist angle
journal, February 2017

Rotationally Commensurate Growth of MoS ₂ on Epitaxial Graphene
journal, November 2015

Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
journal, February 2017

Superlattice-Induced Insulating States and Valley-Protected Orbits in Twisted Bilayer Graphene
journal, September 2016

Dirac electrons in a dodecagonal graphene quasicrystal
journal, June 2018

Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides
journal, August 2016

Fabrication and characterization of heterostructures with subnanometer thickness
journal, October 1984

Twistable electronics with dynamically rotatable heterostructures
journal, August 2018

One-step CVD fabrication and optoelectronic properties of SnS ₂ /SnS vertical heterostructures
journal, January 2018

Plasma-Induced Phase Transformation of SnS2 to SnS
journal, July 2018

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
journal, September 2014

From Bulk to Monolayer MoS2: Evolution of Raman Scattering
journal, January 2012

van der Waals epitaxial growth and characterization of MoSe ₂ thin films on SnS ₂
journal, September 1990

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS ₂ /WSe ₂ hetero-bilayers
journal, January 2017

Epitaxial 2D MoSe ₂ (HfSe ₂ ) Semiconductor/2D TaSe ₂ Metal van der Waals Heterostructures
journal, January 2016