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Title: Helical van der Waals crystals with discretized Eshelby twist

Abstract

The ability to manipulate the twisting topology of van der Waals structures offers a new degree of freedom through which to tailor their electrical and optical properties. The twist angle strongly affects the electronic states, excitons and phonons of the twisted structures through interlayer coupling, giving rise to exotic optical, electric and spintronic behaviours1,2,3,4,5. In twisted bilayer graphene, at certain twist angles, long-range periodicity associated with moiré patterns introduces flat electronic bands and highly localized electronic states, resulting in Mott insulating behaviour and superconductivity3,4. Theoretical studies suggest that these twist-induced phenomena are common to layered materials such as transition-metal dichalcogenides and black phosphorus6,7. Twisted van der Waals structures are usually created using a transfer-stacking method, but this method cannot be used for materials with relatively strong interlayer binding. Facile bottom-up growth methods could provide an alternative means to create twisted van der Waals structures. Here we demonstrate that the Eshelby twist, which is associated with a screw dislocation (a chiral topological defect), can drive the formation of such structures on scales ranging from the nanoscale to the mesoscale. In the synthesis, axial screw dislocations are first introduced into nanowires growing along the stacking direction, yielding van der Waals nanostructures withmore » continuous twisting in which the total twist rates are defined by the radii of the nanowires. Further radial growth of those twisted nanowires that are attached to the substrate leads to an increase in elastic energy, as the total twist rate is fixed by the substrate. The stored elastic energy can be reduced by accommodating the fixed twist rate in a series of discrete jumps. This yields mesoscale twisting structures consisting of a helical assembly of nanoplates demarcated by atomically sharp interfaces with a range of twist angles. We further show that the twisting topology can be tailored by controlling the radial size of the structure.« less

Authors:
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Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Argonne National Laboratory - Center for Nanoscale Materials; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division
OSTI Identifier:
1530336
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Nature (London)
Additional Journal Information:
Journal Volume: 570; Journal Issue: 7761
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Yin, Wang, Jie, Kim, Sujung, Sun, Haoye, Yang, Fuyi, Fang, Zixuan, Tamura, Nobumichi, Zhang, Ruopeng, Song, Xiaohui, Wen, Jianguo, Xu, Bo Z, Wang, Michael, Lin, Shuren, Yu, Qin, Tom, Kyle B., Yang, Deng, Turner, John, Chan, Emory, Jin, Dafei, Ritchie, Robert O., Minor, Andrew M., Chrzan, Daryl C., Scott, Mary C., and Yao, Jie. Helical van der Waals crystals with discretized Eshelby twist. United States: N. p., 2019. Web. doi:10.1038/s41586-019-1308-y.
Liu, Yin, Wang, Jie, Kim, Sujung, Sun, Haoye, Yang, Fuyi, Fang, Zixuan, Tamura, Nobumichi, Zhang, Ruopeng, Song, Xiaohui, Wen, Jianguo, Xu, Bo Z, Wang, Michael, Lin, Shuren, Yu, Qin, Tom, Kyle B., Yang, Deng, Turner, John, Chan, Emory, Jin, Dafei, Ritchie, Robert O., Minor, Andrew M., Chrzan, Daryl C., Scott, Mary C., & Yao, Jie. Helical van der Waals crystals with discretized Eshelby twist. United States. doi:10.1038/s41586-019-1308-y.
Liu, Yin, Wang, Jie, Kim, Sujung, Sun, Haoye, Yang, Fuyi, Fang, Zixuan, Tamura, Nobumichi, Zhang, Ruopeng, Song, Xiaohui, Wen, Jianguo, Xu, Bo Z, Wang, Michael, Lin, Shuren, Yu, Qin, Tom, Kyle B., Yang, Deng, Turner, John, Chan, Emory, Jin, Dafei, Ritchie, Robert O., Minor, Andrew M., Chrzan, Daryl C., Scott, Mary C., and Yao, Jie. Wed . "Helical van der Waals crystals with discretized Eshelby twist". United States. doi:10.1038/s41586-019-1308-y.
@article{osti_1530336,
title = {Helical van der Waals crystals with discretized Eshelby twist},
author = {Liu, Yin and Wang, Jie and Kim, Sujung and Sun, Haoye and Yang, Fuyi and Fang, Zixuan and Tamura, Nobumichi and Zhang, Ruopeng and Song, Xiaohui and Wen, Jianguo and Xu, Bo Z and Wang, Michael and Lin, Shuren and Yu, Qin and Tom, Kyle B. and Yang, Deng and Turner, John and Chan, Emory and Jin, Dafei and Ritchie, Robert O. and Minor, Andrew M. and Chrzan, Daryl C. and Scott, Mary C. and Yao, Jie},
abstractNote = {The ability to manipulate the twisting topology of van der Waals structures offers a new degree of freedom through which to tailor their electrical and optical properties. The twist angle strongly affects the electronic states, excitons and phonons of the twisted structures through interlayer coupling, giving rise to exotic optical, electric and spintronic behaviours1,2,3,4,5. In twisted bilayer graphene, at certain twist angles, long-range periodicity associated with moiré patterns introduces flat electronic bands and highly localized electronic states, resulting in Mott insulating behaviour and superconductivity3,4. Theoretical studies suggest that these twist-induced phenomena are common to layered materials such as transition-metal dichalcogenides and black phosphorus6,7. Twisted van der Waals structures are usually created using a transfer-stacking method, but this method cannot be used for materials with relatively strong interlayer binding. Facile bottom-up growth methods could provide an alternative means to create twisted van der Waals structures. Here we demonstrate that the Eshelby twist, which is associated with a screw dislocation (a chiral topological defect), can drive the formation of such structures on scales ranging from the nanoscale to the mesoscale. In the synthesis, axial screw dislocations are first introduced into nanowires growing along the stacking direction, yielding van der Waals nanostructures with continuous twisting in which the total twist rates are defined by the radii of the nanowires. Further radial growth of those twisted nanowires that are attached to the substrate leads to an increase in elastic energy, as the total twist rate is fixed by the substrate. The stored elastic energy can be reduced by accommodating the fixed twist rate in a series of discrete jumps. This yields mesoscale twisting structures consisting of a helical assembly of nanoplates demarcated by atomically sharp interfaces with a range of twist angles. We further show that the twisting topology can be tailored by controlling the radial size of the structure.},
doi = {10.1038/s41586-019-1308-y},
journal = {Nature (London)},
number = 7761,
volume = 570,
place = {United States},
year = {2019},
month = {6}
}

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