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Title: Planar Hall Effect in Antiferromagnetic MnTe Thin Films

Journal Article · · Physical Review Letters
 [1];  [2];  [3];  [4];  [2];  [5]
  1. Univ. of California, Los Angeles, CA (United States). Dept. of Electrical and Computer Engineering
  2. Univ. of New Hampshire, Durham, NH (United States). Dept. of Physics and Materials Science Program
  3. Chinese Academy of Sciences (CAS), Beijing (China); Univ. of California, Riverside, CA (United States). Lab. for Terascale and Terahertz Electronics (LATTE), Dept. of Electrical and Computer Engineering
  4. Univ. of California, Riverside, CA (United States). Lab. for Terascale and Terahertz Electronics (LATTE), Dept. of Electrical and Computer Engineering
  5. Univ. of California, Los Angeles, CA (United States). Dept. of Electrical and Computer Engineering, and Dept. of Physics and Astronomy

We show that the spin-orbit coupling (SOC) in α-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Γ. A minimal k·p model is constructed to capture this splitting by group theory analysis, a tight-binding model, and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The PHE originates from the band anisotropy given by SOC, and is quantitatively estimated to be 25%–31% for an ideal thin film with a single antiferromagnetic domain.

Research Organization:
Univ. of California, Riverside, CA (United States); Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Univ. of New Hampshire, Durham, NH (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0012670; SC0016424
OSTI ID:
1566696
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 10 Vol. 122; ISSN 0031-9007; ISSN PRLTAO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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