Planar Hall Effect in Antiferromagnetic MnTe Thin Films

Yin, Gen; Yu, Jie-Xiang; Liu, Yizhou; Lake, Roger K.; Zang, Jiadong; Wang, Kang L.

doi:10.1103/physrevlett.122.106602

Title: Planar Hall Effect in Antiferromagnetic MnTe Thin Films

Abstract

We show that the spin-orbit coupling (SOC) in α-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Γ. A minimal k·p model is constructed to capture this splitting by group theory analysis, a tight-binding model, and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The PHE originates from the band anisotropy given by SOC, and is quantitatively estimated to be 25%–31% for an ideal thin film with a single antiferromagnetic domain.

Authors:

Yin, Gen ^[1]; Yu, Jie-Xiang ^[2]; Liu, Yizhou ^[3]; Lake, Roger K. ^[4]; Zang, Jiadong ^[2]; Wang, Kang L. ^[5]

Univ. of California, Los Angeles, CA (United States). Dept. of Electrical and Computer Engineering
Univ. of New Hampshire, Durham, NH (United States). Dept. of Physics and Materials Science Program
Chinese Academy of Sciences (CAS), Beijing (China); Univ. of California, Riverside, CA (United States). Lab. for Terascale and Terahertz Electronics (LATTE), Dept. of Electrical and Computer Engineering
Univ. of California, Riverside, CA (United States). Lab. for Terascale and Terahertz Electronics (LATTE), Dept. of Electrical and Computer Engineering
Univ. of California, Los Angeles, CA (United States). Dept. of Electrical and Computer Engineering, and Dept. of Physics and Astronomy

Publication Date:: 2019-03-13

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Univ. of California, Riverside, CA (United States); Univ. of New Hampshire, Durham, NH (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1566696

Alternate Identifier(s):: OSTI ID: 1546186

Grant/Contract Number:: SC0012670; SC0016424

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 122; Journal Issue: 10; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; phonons; thermal conductivity; thermoelectric; spin dynamics; spintronics

Citation Formats


                    Yin, Gen, Yu, Jie-Xiang, Liu, Yizhou, Lake, Roger K., Zang, Jiadong, and Wang, Kang L. Planar Hall Effect in Antiferromagnetic MnTe Thin Films.  United States: N. p., 2019. 
Web.  doi:10.1103/physrevlett.122.106602.

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                    Yin, Gen, Yu, Jie-Xiang, Liu, Yizhou, Lake, Roger K., Zang, Jiadong, & Wang, Kang L. Planar Hall Effect in Antiferromagnetic MnTe Thin Films.  United States.  https://doi.org/10.1103/physrevlett.122.106602

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                    Yin, Gen, Yu, Jie-Xiang, Liu, Yizhou, Lake, Roger K., Zang, Jiadong, and Wang, Kang L. Wed .  
"Planar Hall Effect in Antiferromagnetic MnTe Thin Films".  United States.  https://doi.org/10.1103/physrevlett.122.106602.  https://www.osti.gov/servlets/purl/1566696.

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@article{osti_1566696,

  title        = {Planar Hall Effect in Antiferromagnetic MnTe Thin Films},

  author       = {Yin, Gen and Yu, Jie-Xiang and Liu, Yizhou and Lake, Roger K. and Zang, Jiadong and Wang, Kang L.},

  abstractNote = {We show that the spin-orbit coupling (SOC) in α-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Γ. A minimal k·p model is constructed to capture this splitting by group theory analysis, a tight-binding model, and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The PHE originates from the band anisotropy given by SOC, and is quantitatively estimated to be 25%–31% for an ideal thin film with a single antiferromagnetic domain.},

  doi          = {10.1103/physrevlett.122.106602},

  journal      = {Physical Review Letters},

  number       = 10,

  volume       = 122,

  place        = {United States},

  year         = {2019},

  month        = {3}

}

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Works referenced in this record:

Total-energy and band-structure calculations for the semimagnetic ${Cd}_{1 - x}$ ${Mn}_{x}$ Te semiconductor alloy and its binary constituents
journal, February 1987

Wei, Su-Huai; Zunger, Alex
Physical Review B, Vol. 35, Issue 5
DOI: 10.1103/PhysRevB.35.2340

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance
journal, January 2018

Bodnar, S. Yu.; Šmejkal, L.; Turek, I.
Nature Communications, Vol. 9, Issue 1
DOI: 10.1038/s41467-017-02780-x

Spin-wave measurements on hexagonal $MnTe$ of $NiAs$ -type structure by inelastic neutron scattering
journal, March 2006

Szuszkiewicz, W.; Dynowska, E.; Witkowska, B.
Physical Review B, Vol. 73, Issue 10
DOI: 10.1103/PhysRevB.73.104403

Spin transport and spin torque in antiferromagnetic devices
journal, March 2018

Železný, J.; Wadley, P.; Olejník, K.
Nature Physics, Vol. 14, Issue 3
DOI: 10.1038/s41567-018-0062-7

The multiple directions of antiferromagnetic spintronics
journal, March 2018

Jungwirth, T.; Sinova, J.; Manchon, A.
Nature Physics, Vol. 14, Issue 3
DOI: 10.1038/s41567-018-0063-6

Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
journal, February 1997

Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
Physical Review Letters, Vol. 78, Issue 7
DOI: 10.1103/PhysRevLett.78.1396

Projector augmented-wave method
journal, December 1994

Blöchl, P. E.
Physical Review B, Vol. 50, Issue 24, p. 17953-17979
DOI: 10.1103/PhysRevB.50.17953

Role of band-index-dependent transport relaxation times in anomalous Hall effect
journal, January 2017

Xiao, Cong; Li, Dingping; Ma, Zhongshui
Physical Review B, Vol. 95, Issue 3
DOI: 10.1103/PhysRevB.95.035426

Antiferromagnetic spintronics
journal, February 2018

Baltz, V.; Manchon, A.; Tsoi, M.
Reviews of Modern Physics, Vol. 90, Issue 1
DOI: 10.1103/RevModPhys.90.015005

Ultrasonic relaxation at the Néel temperature and nuclear acoustic resonance in MnTe
journal, May 1967

Walther, K.
Solid State Communications, Vol. 5, Issue 5
DOI: 10.1016/0038-1098(67)90784-3

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
The Journal of Chemical Physics, Vol. 118, Issue 18
DOI: 10.1063/1.1564060

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Kresse, G.; Furthmüller, J.
Computational Materials Science, Vol. 6, Issue 1, p. 15-50
DOI: 10.1016/0927-0256(96)00008-0

Semiclassical framework for the calculation of transport anisotropies
journal, January 2009

Výborný, Karel; Kovalev, Alexey A.; Sinova, Jairo
Physical Review B, Vol. 79, Issue 4
DOI: 10.1103/PhysRevB.79.045427

An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions
journal, August 2014

Mostofi, Arash A.; Yates, Jonathan R.; Pizzi, Giovanni
Computer Physics Communications, Vol. 185, Issue 8
DOI: 10.1016/j.cpc.2014.05.003

The spontaneous resistivity anisotropy in Ni-based alloys
journal, May 1970

Campbell, I. A.; Fert, A.; Jaoul, O.
Journal of Physics C: Solid State Physics, Vol. 3, Issue 1S
DOI: 10.1088/0022-3719/3/1S/310

Energy Band Structure and Electronic Properties of NiAs Type Compounds. II. Antiferromagnetic Manganese Telluride
journal, March 1981

Sandratskii, L. M.; Egorov, R. F.; Berdyshev, A. A.
physica status solidi (b), Vol. 104, Issue 1
DOI: 10.1002/pssb.2221040111

Influence of the exchange screening parameter on the performance of screened hybrid functionals
journal, December 2006

Krukau, Aliaksandr V.; Vydrov, Oleg A.; Izmaylov, Artur F.
The Journal of Chemical Physics, Vol. 125, Issue 22
DOI: 10.1063/1.2404663

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
journal, June 2016

Kriegner, D.; Výborný, K.; Olejník, K.
Nature Communications, Vol. 7, Issue 1
DOI: 10.1038/ncomms11623

Spin-galvanic effect
journal, May 2002

Ganichev, S. D.; Ivchenko, E. L.; Bel'kov, V. V.
Nature, Vol. 417, Issue 6885
DOI: 10.1038/417153a

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Kresse, G.; Furthmüller, J.
Physical Review B, Vol. 54, Issue 16, p. 11169-11186
DOI: 10.1103/PhysRevB.54.11169

Structural and Magnetic Properties of MnTe Phases from Ab Initio Calculations
journal, December 2012

Krause, Martin; Bechstedt, Friedhelm
Journal of Superconductivity and Novel Magnetism, Vol. 26, Issue 5
DOI: 10.1007/s10948-012-2071-6

Magnetic anisotropy in antiferromagnetic hexagonal MnTe
journal, December 2017

Kriegner, D.; Reichlova, H.; Grenzer, J.
Physical Review B, Vol. 96, Issue 21
DOI: 10.1103/PhysRevB.96.214418

The antiferromagnetic structure deformations in CoO and MnTe
journal, May 1953

Greenwald, S.
Acta Crystallographica, Vol. 6, Issue 5
DOI: 10.1107/S0365110X53001101

Probing the chiral anomaly by planar Hall effect in Dirac semimetal ${Cd}_{3} {As}_{2}$ nanoplates
journal, October 2018

Wu, Min; Zheng, Guolin; Chu, Weiwei
Physical Review B, Vol. 98, Issue 16
DOI: 10.1103/PhysRevB.98.161110

Spintronics of antiferromagnetic systems (Review Article)
journal, January 2014

Gomonay, E. V.; Loktev, V. M.
Low Temperature Physics, Vol. 40, Issue 1
DOI: 10.1063/1.4862467

Spin--Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
book, January 2003

Winkler, Roland; Höhler, Gerhard; Kühn, Johann H.
Springer Tracts in Modern Physics, Vol. 191
DOI: 10.1007/b13586

Anisotropic magnetoresistance in ferromagnetic 3d alloys
journal, July 1975

McGuire, T.; Potter, R.
IEEE Transactions on Magnetics, Vol. 11, Issue 4
DOI: 10.1109/TMAG.1975.1058782

Chiral Anomaly as the Origin of the Planar Hall Effect in Weyl Semimetals
journal, October 2017

Nandy, S.; Sharma, Girish; Taraphder, A.
Physical Review Letters, Vol. 119, Issue 17
DOI: 10.1103/PhysRevLett.119.176804

Electrical switching of an antiferromagnet
journal, January 2016

Wadley, P.; Howells, B.; elezny, J.
Science, Vol. 351, Issue 6273
DOI: 10.1126/science.aab1031

Magnetoresistance of ferromagnetic metals and alloys at low temperatures
journal, June 1951

Smit, J.
Physica, Vol. 17, Issue 6
DOI: 10.1016/0031-8914(51)90117-6

Antiferromagnetic spintronics
journal, March 2016

Jungwirth, T.; Marti, X.; Wadley, P.
Nature Nanotechnology, Vol. 11, Issue 3
DOI: 10.1038/nnano.2016.18

Electronic structure of antiferromagnetic MnTe
journal, May 1983

Podgorny, M.; Oleszkiewicz, J.
Journal of Physics C: Solid State Physics, Vol. 16, Issue 13
DOI: 10.1088/0022-3719/16/13/017

Concepts of antiferromagnetic spintronics
journal, February 2017

Gomonay, O.; Jungwirth, T.; Sinova, J.
physica status solidi (RRL) - Rapid Research Letters, Vol. 11, Issue 4
DOI: 10.1002/pssr.201700022

Giant planar Hall effect in topological metals
journal, July 2017

Burkov, A. A.
Physical Review B, Vol. 96, Issue 4
DOI: 10.1103/PhysRevB.96.041110

Low-temperature neutron diffraction study of MnTe
journal, January 2005

Efrem D'Sa, J. B. C.; Bhobe, P. A.; Priolkar, K. R.
Journal of Magnetism and Magnetic Materials, Vol. 285, Issue 1-2
DOI: 10.1016/j.jmmm.2004.08.001

Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs
journal, January 2017

Grzybowski, M. J.; Wadley, P.; Edmonds, K. W.
Physical Review Letters, Vol. 118, Issue 5
DOI: 10.1103/PhysRevLett.118.057701

Maximally localized Wannier functions for entangled energy bands
journal, December 2001

Souza, Ivo; Marzari, Nicola; Vanderbilt, David
Physical Review B, Vol. 65, Issue 3
DOI: 10.1103/PhysRevB.65.035109

Perspectives of antiferromagnetic spintronics
journal, April 2018

Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel
Physics Letters A, Vol. 382, Issue 13
DOI: 10.1016/j.physleta.2018.01.008

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Title: Planar Hall Effect in Antiferromagnetic MnTe Thin Films

Abstract

Citation Formats

Total-energy and band-structure calculations for the semimagnetic Cd 1 − x Mn x Te semiconductor alloy and its binary constituents journal, February 1987

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance journal, January 2018

Spin-wave measurements on hexagonal MnTe of NiAs -type structure by inelastic neutron scattering journal, March 2006

Spin transport and spin torque in antiferromagnetic devices journal, March 2018

The multiple directions of antiferromagnetic spintronics journal, March 2018

Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)] journal, February 1997

Projector augmented-wave method journal, December 1994

Role of band-index-dependent transport relaxation times in anomalous Hall effect journal, January 2017

Antiferromagnetic spintronics journal, February 2018

Ultrasonic relaxation at the Néel temperature and nuclear acoustic resonance in MnTe journal, May 1967

Hybrid functionals based on a screened Coulomb potential journal, May 2003

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal, July 1996

Semiclassical framework for the calculation of transport anisotropies journal, January 2009

An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions journal, August 2014

The spontaneous resistivity anisotropy in Ni-based alloys journal, May 1970

Energy Band Structure and Electronic Properties of NiAs Type Compounds. II. Antiferromagnetic Manganese Telluride journal, March 1981

Influence of the exchange screening parameter on the performance of screened hybrid functionals journal, December 2006

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe journal, June 2016

Spin-galvanic effect journal, May 2002

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

Structural and Magnetic Properties of MnTe Phases from Ab Initio Calculations journal, December 2012

Magnetic anisotropy in antiferromagnetic hexagonal MnTe journal, December 2017

The antiferromagnetic structure deformations in CoO and MnTe journal, May 1953

Probing the chiral anomaly by planar Hall effect in Dirac semimetal Cd 3 As 2 nanoplates journal, October 2018

Spintronics of antiferromagnetic systems (Review Article) journal, January 2014

Spin--Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems book, January 2003

Anisotropic magnetoresistance in ferromagnetic 3d alloys journal, July 1975

Chiral Anomaly as the Origin of the Planar Hall Effect in Weyl Semimetals journal, October 2017

Electrical switching of an antiferromagnet journal, January 2016

Magnetoresistance of ferromagnetic metals and alloys at low temperatures journal, June 1951

Antiferromagnetic spintronics journal, March 2016

Electronic structure of antiferromagnetic MnTe journal, May 1983

Concepts of antiferromagnetic spintronics journal, February 2017

Giant planar Hall effect in topological metals journal, July 2017

Low-temperature neutron diffraction study of MnTe journal, January 2005

Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs journal, January 2017

Maximally localized Wannier functions for entangled energy bands journal, December 2001

Perspectives of antiferromagnetic spintronics journal, April 2018

Total-energy and band-structure calculations for the semimagnetic ${Cd}_{1 - x}$ ${Mn}_{x}$ Te semiconductor alloy and its binary constituents
journal, February 1987

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance
journal, January 2018

Spin-wave measurements on hexagonal $MnTe$ of $NiAs$ -type structure by inelastic neutron scattering
journal, March 2006

Spin transport and spin torque in antiferromagnetic devices
journal, March 2018

The multiple directions of antiferromagnetic spintronics
journal, March 2018

Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
journal, February 1997

Projector augmented-wave method
journal, December 1994

Role of band-index-dependent transport relaxation times in anomalous Hall effect
journal, January 2017

Antiferromagnetic spintronics
journal, February 2018

Ultrasonic relaxation at the Néel temperature and nuclear acoustic resonance in MnTe
journal, May 1967

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Semiclassical framework for the calculation of transport anisotropies
journal, January 2009

An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions
journal, August 2014

The spontaneous resistivity anisotropy in Ni-based alloys
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Energy Band Structure and Electronic Properties of NiAs Type Compounds. II. Antiferromagnetic Manganese Telluride
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Influence of the exchange screening parameter on the performance of screened hybrid functionals
journal, December 2006

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
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Spin-galvanic effect
journal, May 2002

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

Structural and Magnetic Properties of MnTe Phases from Ab Initio Calculations
journal, December 2012

Magnetic anisotropy in antiferromagnetic hexagonal MnTe
journal, December 2017

The antiferromagnetic structure deformations in CoO and MnTe
journal, May 1953

Probing the chiral anomaly by planar Hall effect in Dirac semimetal ${Cd}_{3} {As}_{2}$ nanoplates
journal, October 2018

Spintronics of antiferromagnetic systems (Review Article)
journal, January 2014

Spin--Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
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Anisotropic magnetoresistance in ferromagnetic 3d alloys
journal, July 1975

Chiral Anomaly as the Origin of the Planar Hall Effect in Weyl Semimetals
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Electrical switching of an antiferromagnet
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Magnetoresistance of ferromagnetic metals and alloys at low temperatures
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Antiferromagnetic spintronics
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Electronic structure of antiferromagnetic MnTe
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Concepts of antiferromagnetic spintronics
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Giant planar Hall effect in topological metals
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Low-temperature neutron diffraction study of MnTe
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Perspectives of antiferromagnetic spintronics
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