Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device
Abstract
Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias,more »
- Authors:
-
[1]
- Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids CAS Center of Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China, School of Chemical Science University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids CAS Center of Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1562586
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Name: Advanced Materials Journal Volume: 31 Journal Issue: 44; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Liu, Yidong, Yang, Yizhou, Shi, Dandan, Xiao, Mingchao, Jiang, Lang, Tian, Jianwu, Zhang, Guanxin, Liu, Zitong, Zhang, Xisha, and Zhang, Deqing. Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device. Germany: N. p., 2019.
Web. doi:10.1002/adma.201902576.
Liu, Yidong, Yang, Yizhou, Shi, Dandan, Xiao, Mingchao, Jiang, Lang, Tian, Jianwu, Zhang, Guanxin, Liu, Zitong, Zhang, Xisha, & Zhang, Deqing. Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device. Germany. https://doi.org/10.1002/adma.201902576
Liu, Yidong, Yang, Yizhou, Shi, Dandan, Xiao, Mingchao, Jiang, Lang, Tian, Jianwu, Zhang, Guanxin, Liu, Zitong, Zhang, Xisha, and Zhang, Deqing. Wed .
"Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device". Germany. https://doi.org/10.1002/adma.201902576.
@article{osti_1562586,
title = {Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device},
author = {Liu, Yidong and Yang, Yizhou and Shi, Dandan and Xiao, Mingchao and Jiang, Lang and Tian, Jianwu and Zhang, Guanxin and Liu, Zitong and Zhang, Xisha and Zhang, Deqing},
abstractNote = {Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.},
doi = {10.1002/adma.201902576},
journal = {Advanced Materials},
number = 44,
volume = 31,
place = {Germany},
year = {Wed Sep 18 00:00:00 EDT 2019},
month = {Wed Sep 18 00:00:00 EDT 2019}
}
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