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Title: Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

Authors:
 [1];  [1];  [1];  [2];  [2];  [1];  [2];  [2];  [2]; ORCiD logo [1]
  1. Beijing National Laboratory for Molecular SciencesCAS Key Laboratory of Organic SolidsCAS Center of Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of Sciences Beijing 100190 P. R. China, School of Chemical ScienceUniversity of Chinese Academy of Sciences Beijing 100049 P. R. China
  2. Beijing National Laboratory for Molecular SciencesCAS Key Laboratory of Organic SolidsCAS Center of Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of Sciences Beijing 100190 P. R. China
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1562586
Grant/Contract Number:  
DE‐AC02‐06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Name: Advanced Materials; Journal ID: ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Liu, Yidong, Yang, Yizhou, Shi, Dandan, Xiao, Mingchao, Jiang, Lang, Tian, Jianwu, Zhang, Guanxin, Liu, Zitong, Zhang, Xisha, and Zhang, Deqing. Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device. Germany: N. p., 2019. Web. doi:10.1002/adma.201902576.
Liu, Yidong, Yang, Yizhou, Shi, Dandan, Xiao, Mingchao, Jiang, Lang, Tian, Jianwu, Zhang, Guanxin, Liu, Zitong, Zhang, Xisha, & Zhang, Deqing. Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device. Germany. doi:10.1002/adma.201902576.
Liu, Yidong, Yang, Yizhou, Shi, Dandan, Xiao, Mingchao, Jiang, Lang, Tian, Jianwu, Zhang, Guanxin, Liu, Zitong, Zhang, Xisha, and Zhang, Deqing. Wed . "Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device". Germany. doi:10.1002/adma.201902576.
@article{osti_1562586,
title = {Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device},
author = {Liu, Yidong and Yang, Yizhou and Shi, Dandan and Xiao, Mingchao and Jiang, Lang and Tian, Jianwu and Zhang, Guanxin and Liu, Zitong and Zhang, Xisha and Zhang, Deqing},
abstractNote = {},
doi = {10.1002/adma.201902576},
journal = {Advanced Materials},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {9}
}

Journal Article:
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This content will become publicly available on September 17, 2020
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Works referenced in this record:

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