Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3
Abstract
Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.
- Authors:
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[1];
[2];
[3];
[1];
[4];
[5];
[4];
[3];
[3];
[3];
[2];
[1]
- Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool, UK
- Department of Chemistry, University College London, London, WC1H 0AJ, UK, Thomas Young Centre
- Department of Chemistry, University College London, London, WC1H 0AJ, UK
- Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, USA
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, UK
- NSG Group, European Technical Centre Hall Lane, Ormskirk, UK
- Surrey Ion Beam Centre, University of Surrey, Surrey, UK
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1562327
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Published Article
- Journal Name:
- Materials Horizons
- Additional Journal Information:
- Journal Name: Materials Horizons; Journal ID: ISSN 2051-6347
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., and Veal, Tim D. Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3. United Kingdom: N. p., 2019.
Web. doi:10.1039/C9MH01014A.
Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., & Veal, Tim D. Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3. United Kingdom. doi:10.1039/C9MH01014A.
Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., and Veal, Tim D. Tue .
"Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3". United Kingdom. doi:10.1039/C9MH01014A.
@article{osti_1562327,
title = {Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3},
author = {Swallow, Jack E. N. and Williamson, Benjamin A. D. and Sathasivam, Sanjayan and Birkett, Max and Featherstone, Thomas J. and Murgatroyd, Philip A. E. and Edwards, Holly J. and Lebens-Higgins, Zachary W. and Duncan, David A. and Farnworth, Mark and Warren, Paul and Peng, Nianhua and Lee, Tien-Lin and Piper, Louis F. J. and Regoutz, Anna and Carmalt, Claire J. and Parkin, Ivan P. and Dhanak, Vin R. and Scanlon, David O. and Veal, Tim D.},
abstractNote = {Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.},
doi = {10.1039/C9MH01014A},
journal = {Materials Horizons},
number = ,
volume = ,
place = {United Kingdom},
year = {2019},
month = {1}
}
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Publisher's Version of Record
DOI: 10.1039/C9MH01014A
DOI: 10.1039/C9MH01014A
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