Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3

doi:10.1039/C9MH01014A

Title: Resonant doping for high mobility transparent conductors: the case of Mo-doped In ₂ O ₃

Abstract

Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.

Authors:

^[1];

^[2];

^[3];

^[1]; Featherstone, Thomas J. ^[1]; Murgatroyd, Philip A. E. ^[1]; Edwards, Holly J. ^[1];

^[4];

^[5]; Farnworth, Mark ^[6]; Warren, Paul ^[6]; Peng, Nianhua ^[7]; Lee, Tien-Lin ^[5];

^[4];

^[3];

^[3]; Dhanak, Vin R. ^[1];

^[2];

^[1]

Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool, UK
Department of Chemistry, University College London, London, WC1H 0AJ, UK, Thomas Young Centre
Department of Chemistry, University College London, London, WC1H 0AJ, UK
Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, USA
Diamond Light Source, Harwell Science and Innovation Campus, Didcot, UK
NSG Group, European Technical Centre Hall Lane, Ormskirk, UK
Surrey Ion Beam Centre, University of Surrey, Surrey, UK

Publication Date:: 2020-01-02

Sponsoring Org.:: USDOE

OSTI Identifier:: 1562327

Grant/Contract Number:: SC0012704

Resource Type:: Published Article

Journal Name:: Materials Horizons

Additional Journal Information:: Journal Name: Materials Horizons Journal Volume: 7 Journal Issue: 1; Journal ID: ISSN 2051-6347

Publisher:: Royal Society of Chemistry (RSC)

Country of Publication:: United Kingdom

Language:: English

Citation Formats


                    Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., and Veal, Tim D. Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3.  United Kingdom: N. p., 2020. 
        Web.  doi:10.1039/C9MH01014A.

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                    Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., & Veal, Tim D. Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3.  United Kingdom.  doi:10.1039/C9MH01014A.

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                    Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., and Veal, Tim D. Thu .  
        "Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3".  United Kingdom.  doi:10.1039/C9MH01014A.

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@article{osti_1562327,

  title        = {Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3},

  author       = {Swallow, Jack E. N. and Williamson, Benjamin A. D. and Sathasivam, Sanjayan and Birkett, Max and Featherstone, Thomas J. and Murgatroyd, Philip A. E. and Edwards, Holly J. and Lebens-Higgins, Zachary W. and Duncan, David A. and Farnworth, Mark and Warren, Paul and Peng, Nianhua and Lee, Tien-Lin and Piper, Louis F. J. and Regoutz, Anna and Carmalt, Claire J. and Parkin, Ivan P. and Dhanak, Vin R. and Scanlon, David O. and Veal, Tim D.},

  abstractNote = {Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.},

  doi          = {10.1039/C9MH01014A},

  journal      = {Materials Horizons},

  number       = 1,

  volume       = 7,

  place        = {United Kingdom},

  year         = {2020},

  month        = {1}

}

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DOI: 10.1039/C9MH01014A

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Title: Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3

Abstract

Citation Formats

Infrared reflectivity measurements on bulk and epitaxial GaSb. (Carrier concentration and mobility measurements) journal, May 1980

Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility journal, May 2009

Projector augmented-wave method journal, December 1994

Band-gap widening in heavily Sn-doped In 2 O 3 journal, September 1984

Investigations on high visible to near infrared transparent and high mobility Mo doped In2O3 thin films prepared by spray pyrolysis technique journal, March 2010

Past achievements and future challenges in the development of optically transparent electrodes journal, November 2012

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal, July 1996

Electrical properties of vacuum-deposited indium oxide and indium tin oxide films journal, July 1980

Influence of the exchange screening parameter on the performance of screened hybrid functionals journal, December 2006

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method journal, August 2016

Origins of band-gap renormalization in degenerately doped semiconductors journal, August 2008

Design of n-Type Transparent Conducting Oxides: The Case of Transition Metal Doping in In 2 O 3 journal, February 2018

Highly Conductive PEDOT:PSS Electrode with Optimized Solvent and Thermal Post-Treatment for ITO-Free Organic Solar Cells journal, February 2011

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal, October 1996

A new transparent conductive thin film In2O3:Mo journal, August 2001

Ionized impurity scattering in degenerate In2O3 journal, November 1973

Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature journal, May 1999

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium journal, May 1994

Microscopic Origin of Electron Accumulation in In 2 O 3 journal, January 2013

Effects of extrinsic and intrinsic perturbations on the electronic structure of graphene: Retaining an effective primitive cell band structure by band unfolding journal, January 2014

Correlated metals as transparent conductors journal, December 2015

Tin doped indium oxide thin films: Electrical properties journal, March 1998

Origin of High Mobility in Molybdenum-Doped Indium Oxide journal, April 2015

Highly Conductive, Transparent Films of Sputtered In[sub 2−x]Sn[sub x]O[sub 3−y] journal, January 1972

Indium-oxide polymorphs from first principles: Quasiparticle electronic states journal, April 2008

Untersuchungen an halbleitenden Indiumoxydschichten journal, January 1966

Electrical and structural properties of low resistivity tin‐doped indium oxide films journal, April 1992

Ab initiomolecular dynamics for liquid metals journal, January 1993

Graphene photonics and optoelectronics journal, August 2010

General transfer-matrix method for optical multilayer systems with coherent, partially coherent, and incoherent interference journal, January 2002

The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win? journal, December 2009

Molybdenum-doped indium oxide transparent conductive thin films journal, January 2002

High-throughput optimization of near-infrared-transparent Mo-doped In2O3 thin films with high conductivity by combined use of atmospheric-pressure mist chemical-vapor deposition and sputtering journal, March 2017

Comparing the Fundamental Physics and Device Performance of Transparent, Conductive Nanostructured Networks with Conventional Transparent Conducting Oxides journal, January 2012

Bendable silver-based low emissivity coating on glass journal, September 1989

Unfolding spinor wave functions and expectation values of general operators: Introducing the unfolding-density operator journal, January 2015

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing journal, April 2011

Title: Resonant doping for high mobility transparent conductors: the case of Mo-doped In ₂ O ₃

Infrared reflectivity measurements on bulk and epitaxial GaSb. (Carrier concentration and mobility measurements)
journal, May 1980

Spray deposited molybdenum doped indium oxide thin films with high near infrared transparency and carrier mobility
journal, May 2009

Projector augmented-wave method
journal, December 1994

Band-gap widening in heavily Sn-doped ${In}_{2}$ $O_{3}$
journal, September 1984

Investigations on high visible to near infrared transparent and high mobility Mo doped In2O3 thin films prepared by spray pyrolysis technique
journal, March 2010

Past achievements and future challenges in the development of optically transparent electrodes
journal, November 2012

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Electrical properties of vacuum-deposited indium oxide and indium tin oxide films
journal, July 1980

Influence of the exchange screening parameter on the performance of screened hybrid functionals
journal, December 2006

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method
journal, August 2016

Origins of band-gap renormalization in degenerately doped semiconductors
journal, August 2008

Design of n-Type Transparent Conducting Oxides: The Case of Transition Metal Doping in In ₂ O ₃
journal, February 2018

Highly Conductive PEDOT:PSS Electrode with Optimized Solvent and Thermal Post-Treatment for ITO-Free Organic Solar Cells
journal, February 2011

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996

A new transparent conductive thin film In2O3:Mo
journal, August 2001

Ionized impurity scattering in degenerate In2O3
journal, November 1973

Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature
journal, May 1999

Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
journal, May 1994

Microscopic Origin of Electron Accumulation in ${In}_{2} O_{3}$
journal, January 2013

Effects of extrinsic and intrinsic perturbations on the electronic structure of graphene: Retaining an effective primitive cell band structure by band unfolding
journal, January 2014

Correlated metals as transparent conductors
journal, December 2015

Tin doped indium oxide thin films: Electrical properties
journal, March 1998

Origin of High Mobility in Molybdenum-Doped Indium Oxide
journal, April 2015

Highly Conductive, Transparent Films of Sputtered In[sub 2−x]Sn[sub x]O[sub 3−y]
journal, January 1972

Indium-oxide polymorphs from first principles: Quasiparticle electronic states
journal, April 2008

Untersuchungen an halbleitenden Indiumoxydschichten
journal, January 1966

Electrical and structural properties of low resistivity tin‐doped indium oxide films
journal, April 1992

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Graphene photonics and optoelectronics
journal, August 2010

General transfer-matrix method for optical multilayer systems with coherent, partially coherent, and incoherent interference
journal, January 2002

The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win?
journal, December 2009

Molybdenum-doped indium oxide transparent conductive thin films
journal, January 2002

High-throughput optimization of near-infrared-transparent Mo-doped In2O3 thin films with high conductivity by combined use of atmospheric-pressure mist chemical-vapor deposition and sputtering
journal, March 2017

Comparing the Fundamental Physics and Device Performance of Transparent, Conductive Nanostructured Networks with Conventional Transparent Conducting Oxides
journal, January 2012

Bendable silver-based low emissivity coating on glass
journal, September 1989

Unfolding spinor wave functions and expectation values of general operators: Introducing the unfolding-density operator
journal, January 2015

Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
journal, April 2011