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Title: Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3

Abstract

Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [4]; ORCiD logo [5];  [6];  [6];  [7];  [5]; ORCiD logo [4]; ORCiD logo [3]; ORCiD logo [3]; ORCiD logo [3];  [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool, UK
  2. Department of Chemistry, University College London, London, WC1H 0AJ, UK, Thomas Young Centre
  3. Department of Chemistry, University College London, London, WC1H 0AJ, UK
  4. Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, USA
  5. Diamond Light Source, Harwell Science and Innovation Campus, Didcot, UK
  6. NSG Group, European Technical Centre Hall Lane, Ormskirk, UK
  7. Surrey Ion Beam Centre, University of Surrey, Surrey, UK
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1562327
Grant/Contract Number:  
SC0012704
Resource Type:
Published Article
Journal Name:
Materials Horizons
Additional Journal Information:
Journal Name: Materials Horizons; Journal ID: ISSN 2051-6347
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., and Veal, Tim D. Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3. United Kingdom: N. p., 2019. Web. doi:10.1039/C9MH01014A.
Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., & Veal, Tim D. Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3. United Kingdom. doi:10.1039/C9MH01014A.
Swallow, Jack E. N., Williamson, Benjamin A. D., Sathasivam, Sanjayan, Birkett, Max, Featherstone, Thomas J., Murgatroyd, Philip A. E., Edwards, Holly J., Lebens-Higgins, Zachary W., Duncan, David A., Farnworth, Mark, Warren, Paul, Peng, Nianhua, Lee, Tien-Lin, Piper, Louis F. J., Regoutz, Anna, Carmalt, Claire J., Parkin, Ivan P., Dhanak, Vin R., Scanlon, David O., and Veal, Tim D. Tue . "Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3". United Kingdom. doi:10.1039/C9MH01014A.
@article{osti_1562327,
title = {Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3},
author = {Swallow, Jack E. N. and Williamson, Benjamin A. D. and Sathasivam, Sanjayan and Birkett, Max and Featherstone, Thomas J. and Murgatroyd, Philip A. E. and Edwards, Holly J. and Lebens-Higgins, Zachary W. and Duncan, David A. and Farnworth, Mark and Warren, Paul and Peng, Nianhua and Lee, Tien-Lin and Piper, Louis F. J. and Regoutz, Anna and Carmalt, Claire J. and Parkin, Ivan P. and Dhanak, Vin R. and Scanlon, David O. and Veal, Tim D.},
abstractNote = {Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.},
doi = {10.1039/C9MH01014A},
journal = {Materials Horizons},
number = ,
volume = ,
place = {United Kingdom},
year = {2019},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1039/C9MH01014A

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Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
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