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Title: Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3

Journal Article · · Materials Horizons
DOI: https://doi.org/10.1039/C9MH01014A · OSTI ID:1562327
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [4]; ORCiD logo [5];  [6];  [6];  [7];  [5]; ORCiD logo [4]; ORCiD logo [3]; ORCiD logo [3]; ORCiD logo [3];  [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool, UK
  2. Department of Chemistry, University College London, London, WC1H 0AJ, UK, Thomas Young Centre
  3. Department of Chemistry, University College London, London, WC1H 0AJ, UK
  4. Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, USA
  5. Diamond Light Source, Harwell Science and Innovation Campus, Didcot, UK
  6. NSG Group, European Technical Centre Hall Lane, Ormskirk, UK
  7. Surrey Ion Beam Centre, University of Surrey, Surrey, UK

Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0012704
OSTI ID:
1562327
Journal Information:
Materials Horizons, Journal Name: Materials Horizons Journal Issue: 1 Vol. 7; ISSN 2051-6347; ISSN MHAOAL
Publisher:
Royal Society of Chemistry (RSC)Copyright Statement
Country of Publication:
United Kingdom
Language:
English

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Molybdenum-doped indium oxide transparent conductive thin films
  • Meng, Yang; Yang, Xi-liang; Chen, Hua-xian
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 1 https://doi.org/10.1116/1.1421595
journal January 2002
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