Resonant doping for high mobility transparent conductors: the case of Mo-doped In 2 O 3
- Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool, UK
- Department of Chemistry, University College London, London, WC1H 0AJ, UK, Thomas Young Centre
- Department of Chemistry, University College London, London, WC1H 0AJ, UK
- Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, USA
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, UK
- NSG Group, European Technical Centre Hall Lane, Ormskirk, UK
- Surrey Ion Beam Centre, University of Surrey, Surrey, UK
Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1562327
- Journal Information:
- Materials Horizons, Journal Name: Materials Horizons Journal Issue: 1 Vol. 7; ISSN 2051-6347; ISSN MHAOAL
- Publisher:
- Royal Society of Chemistry (RSC)Copyright Statement
- Country of Publication:
- United Kingdom
- Language:
- English
Similar Records
Preparation and properties of transparent conductors
Transparent electronic conductors in electrochromic devices
Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3
Conference
·
1996
·
OSTI ID:417706
Transparent electronic conductors in electrochromic devices
Conference
·
1990
·
OSTI ID:86094
Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3
Journal Article
·
2021
· Materials Horizons
·
OSTI ID:1690048
+17 more