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Title: Ternary nitride semiconductors in the rocksalt crystal structure

Abstract

Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula MgxTM1-xN (TM= Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2V-1s-1electron mobility for MgZrN2grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary MgxTM1-xN semiconductors are also structurally compatible both with binaryTMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight MgxTM1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [4];  [5];  [6];  [1];  [1];  [6];  [1];  [7];  [1];  [1]
  1. Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,
  2. Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Department of Chemical and Biological Engineering, University of Colorado, Boulder, Boulder, CO 80309,
  3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
  4. Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Department of Physics, Colorado School of Mines, Golden, CO 80401,
  5. Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Applied Science and Technology Graduate Group, University of California, Berkeley, CA 94720,
  6. Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401,
  7. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1564313
Alternate Identifier(s):
OSTI ID: 1543124; OSTI ID: 1561931
Report Number(s):
NREL/JA-5K00-72466
Journal ID: ISSN 0027-8424
Grant/Contract Number:  
AC36-08GO28308; AC02-05CH11231
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 116 Journal Issue: 30; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; materials discovery; nitride semiconductors; defect-tolerant materials

Citation Formats

Bauers, Sage R., Holder, Aaron, Sun, Wenhao, Melamed, Celeste L., Woods-Robinson, Rachel, Mangum, John, Perkins, John, Tumas, William, Gorman, Brian, Tamboli, Adele, Ceder, Gerbrand, Lany, Stephan, and Zakutayev, Andriy. Ternary nitride semiconductors in the rocksalt crystal structure. United States: N. p., 2019. Web. doi:10.1073/pnas.1904926116.
Bauers, Sage R., Holder, Aaron, Sun, Wenhao, Melamed, Celeste L., Woods-Robinson, Rachel, Mangum, John, Perkins, John, Tumas, William, Gorman, Brian, Tamboli, Adele, Ceder, Gerbrand, Lany, Stephan, & Zakutayev, Andriy. Ternary nitride semiconductors in the rocksalt crystal structure. United States. https://doi.org/10.1073/pnas.1904926116
Bauers, Sage R., Holder, Aaron, Sun, Wenhao, Melamed, Celeste L., Woods-Robinson, Rachel, Mangum, John, Perkins, John, Tumas, William, Gorman, Brian, Tamboli, Adele, Ceder, Gerbrand, Lany, Stephan, and Zakutayev, Andriy. Wed . "Ternary nitride semiconductors in the rocksalt crystal structure". United States. https://doi.org/10.1073/pnas.1904926116.
@article{osti_1564313,
title = {Ternary nitride semiconductors in the rocksalt crystal structure},
author = {Bauers, Sage R. and Holder, Aaron and Sun, Wenhao and Melamed, Celeste L. and Woods-Robinson, Rachel and Mangum, John and Perkins, John and Tumas, William and Gorman, Brian and Tamboli, Adele and Ceder, Gerbrand and Lany, Stephan and Zakutayev, Andriy},
abstractNote = {Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula MgxTM1-xN (TM= Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2V-1s-1electron mobility for MgZrN2grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary MgxTM1-xN semiconductors are also structurally compatible both with binaryTMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight MgxTM1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.},
doi = {10.1073/pnas.1904926116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 30,
volume = 116,
place = {United States},
year = {Wed Jul 03 00:00:00 EDT 2019},
month = {Wed Jul 03 00:00:00 EDT 2019}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1073/pnas.1904926116

Citation Metrics:
Cited by: 47 works
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Figures / Tables:

Figure 1 Figure 1: Structural properties of MgG-3TMNG-2 (TM=Ti, Zr, Hf, Nb) materials. (a) The charge-neutral local structural motifs that serve as building-blocks for AE2+TM4+N2 rocksalt-derived structures. An alternative to the clustered and dispersed cation-ordered motifs is a substitutionally disordered cation lattice. (b) Computed diffraction patterns of the rocksalt-derived ground states formore » MgG-3TMNG-2 with an ordered cation sublattice (c) Synchrotron X-ray diffraction data exhibit peaks that can be indexed to simple rocksalt (peak positions shown in black for a= 4.46Å to match Mg2NbN3), indicating the presence of substitutional disorder on the cation sublattice.« less

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