Ternary nitride semiconductors in the rocksalt crystal structure
Abstract
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula MgxTM1-xN (TM= Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2V-1s-1electron mobility for MgZrN2grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary MgxTM1-xN semiconductors are also structurally compatible both with binaryTMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight MgxTM1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.
- Authors:
-
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Department of Chemical and Biological Engineering, University of Colorado, Boulder, Boulder, CO 80309,
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Department of Physics, Colorado School of Mines, Golden, CO 80401,
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Applied Science and Technology Graduate Group, University of California, Berkeley, CA 94720,
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401,
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center for Next Generation of Materials by Design: Incorporating Metastability (CNGMD); National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1564313
- Alternate Identifier(s):
- OSTI ID: 1543124; OSTI ID: 1561931
- Report Number(s):
- NREL/JA-5K00-72466
Journal ID: ISSN 0027-8424
- Grant/Contract Number:
- AC36-08GO28308; AC02-05CH11231
- Resource Type:
- Published Article
- Journal Name:
- Proceedings of the National Academy of Sciences of the United States of America
- Additional Journal Information:
- Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 116 Journal Issue: 30; Journal ID: ISSN 0027-8424
- Publisher:
- Proceedings of the National Academy of Sciences
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; materials discovery; nitride semiconductors; defect-tolerant materials
Citation Formats
Bauers, Sage R., Holder, Aaron, Sun, Wenhao, Melamed, Celeste L., Woods-Robinson, Rachel, Mangum, John, Perkins, John, Tumas, William, Gorman, Brian, Tamboli, Adele, Ceder, Gerbrand, Lany, Stephan, and Zakutayev, Andriy. Ternary nitride semiconductors in the rocksalt crystal structure. United States: N. p., 2019.
Web. doi:10.1073/pnas.1904926116.
Bauers, Sage R., Holder, Aaron, Sun, Wenhao, Melamed, Celeste L., Woods-Robinson, Rachel, Mangum, John, Perkins, John, Tumas, William, Gorman, Brian, Tamboli, Adele, Ceder, Gerbrand, Lany, Stephan, & Zakutayev, Andriy. Ternary nitride semiconductors in the rocksalt crystal structure. United States. https://doi.org/10.1073/pnas.1904926116
Bauers, Sage R., Holder, Aaron, Sun, Wenhao, Melamed, Celeste L., Woods-Robinson, Rachel, Mangum, John, Perkins, John, Tumas, William, Gorman, Brian, Tamboli, Adele, Ceder, Gerbrand, Lany, Stephan, and Zakutayev, Andriy. Wed .
"Ternary nitride semiconductors in the rocksalt crystal structure". United States. https://doi.org/10.1073/pnas.1904926116.
@article{osti_1564313,
title = {Ternary nitride semiconductors in the rocksalt crystal structure},
author = {Bauers, Sage R. and Holder, Aaron and Sun, Wenhao and Melamed, Celeste L. and Woods-Robinson, Rachel and Mangum, John and Perkins, John and Tumas, William and Gorman, Brian and Tamboli, Adele and Ceder, Gerbrand and Lany, Stephan and Zakutayev, Andriy},
abstractNote = {Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula MgxTM1-xN (TM= Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2V-1s-1electron mobility for MgZrN2grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary MgxTM1-xN semiconductors are also structurally compatible both with binaryTMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight MgxTM1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.},
doi = {10.1073/pnas.1904926116},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 30,
volume = 116,
place = {United States},
year = {Wed Jul 03 00:00:00 EDT 2019},
month = {Wed Jul 03 00:00:00 EDT 2019}
}
https://doi.org/10.1073/pnas.1904926116
Web of Science
Figures / Tables:
Works referenced in this record:
Effects of Disorder on Carrier Transport in
journal, October 2015
- Baranowski, Lauryn L.; McLaughlin, Kevin; Zawadzki, Pawel
- Physical Review Applied, Vol. 4, Issue 4
Disorder effects on the band structure of : Role of exchange defects
journal, November 2016
- Skachkov, Dmitry; Quayle, Paul C.; Kash, Kathleen
- Physical Review B, Vol. 94, Issue 20
An open experimental database for exploring inorganic materials
journal, April 2018
- Zakutayev, Andriy; Wunder, Nick; Schwarting, Marcus
- Scientific Data, Vol. 5, Issue 1
Mixed ternary transition metal nitrides: A comprehensive review of synthesis, electronic structure, and properties of engineering relevance
journal, March 2019
- Tareen, Ayesha Khan; Priyanga, G. Sudha; Behara, Santosh
- Progress in Solid State Chemistry, Vol. 53
Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides
journal, September 1976
- Shannon, R. D.
- Acta Crystallographica Section A, Vol. 32, Issue 5, p. 751-767
A review of cation-ordered rock salt superstructure oxides
journal, January 2000
- Mather, Glenn C.; Dussarrat, Christian; Etourneau, Jean
- Journal of Materials Chemistry, Vol. 10, Issue 10
Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
journal, May 2008
- Moram, M. A.; Novikov, S. V.; Kent, A. J.
- Journal of Crystal Growth, Vol. 310, Issue 11
Defect Tolerant Semiconductors for Solar Energy Conversion
journal, March 2014
- Zakutayev, Andriy; Caskey, Christopher M.; Fioretti, Angela N.
- The Journal of Physical Chemistry Letters, Vol. 5, Issue 7
Redox-Mediated Stabilization in Zinc Molybdenum Nitrides
journal, February 2018
- Arca, Elisabetta; Lany, Stephan; Perkins, John D.
- Journal of the American Chemical Society, Vol. 140, Issue 12
Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials
journal, June 2018
- Saha, Bivas; Shakouri, Ali; Sands, Timothy D.
- Applied Physics Reviews, Vol. 5, Issue 2
Intrinsic concentration, effective densities of states, and effective mass in silicon
journal, March 1990
- Green, Martin A.
- Journal of Applied Physics, Vol. 67, Issue 6
From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999
- Kresse, G.; Joubert, D.
- Physical Review B, Vol. 59, Issue 3, p. 1758-1775
Combinatorial insights into doping control and transport properties of zinc tin nitride
journal, January 2015
- Fioretti, Angela N.; Zakutayev, Andriy; Moutinho, Helio
- Journal of Materials Chemistry C, Vol. 3, Issue 42
Composition, structure, and semiconducting properties of Mg x Zr 2− x N 2 thin films
journal, May 2019
- Bauers, Sage R.; Hamann, Danielle M.; Patterson, Ashlea
- Japanese Journal of Applied Physics, Vol. 58, Issue SC
Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials
journal, January 2017
- Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.
- Journal of Materials Chemistry A, Vol. 5, Issue 23
Materials in superconducting quantum bits
journal, October 2013
- Oliver, William D.; Welander, Paul B.
- MRS Bulletin, Vol. 38, Issue 10
Properties and microelectronic applications of thin films of refractory metal nitrides
journal, July 1985
- Wittmer, Marc
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 3, Issue 4
Synthesis and Structure of Two New Layered Ternary Nitrides, SrZrN 2 and SrHfN 2
journal, January 1996
- Gregory, D. H.; Barker, M. G.; Edwards, P. P.
- Inorganic Chemistry, Vol. 35, Issue 26
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
journal, August 1998
- Nakamura, S.
- Science, Vol. 281, Issue 5379
Modeling amorphous thin films: Kinetically limited minimization
journal, September 2014
- Zawadzki, Paweł P.; Perkins, John; Lany, Stephan
- Physical Review B, Vol. 90, Issue 9
Nitrogen-rich transition metal nitrides
journal, July 2013
- Salamat, Ashkan; Hector, Andrew L.; Kroll, Peter
- Coordination Chemistry Reviews, Vol. 257, Issue 13-14
Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
- Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
- Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
Some properties of (Ti,Mg)N thin films deposited by reactive dc magnetron sputtering
journal, October 2005
- Fenker, M.; Balzer, M.; Kappl, H.
- Surface and Coatings Technology, Vol. 200, Issue 1-4
Control of the Electrical Properties in Spinel Oxides by Manipulating the Cation Disorder
journal, October 2013
- Ndione, Paul F.; Shi, Yezhou; Stevanovic, Vladan
- Advanced Functional Materials, Vol. 24, Issue 5
Electronic-Structure Origin of Cation Disorder in Transition-Metal Oxides
journal, October 2017
- Urban, Alexander; Abdellahi, Aziz; Dacek, Stephen
- Physical Review Letters, Vol. 119, Issue 17
Darstellung und Struktur einiger Gemischtvalenter ternärer Tantalnitride mit Lithium und Magnesium
journal, May 1992
- Brokamp, Th.; Jacobs, H.
- Journal of Alloys and Compounds, Vol. 183
Growth and properties of epitaxial Ti 1− x Mg x N(001) layers
journal, November 2018
- Wang, Baiwei; Kerdsongpanya, Sit; McGahay, Mary E.
- Journal of Vacuum Science & Technology A, Vol. 36, Issue 6
Identifying defect-tolerant semiconductors with high minority-carrier lifetimes: beyond hybrid lead halide perovskites
journal, May 2015
- Brandt, Riley E.; Stevanović, Vladan; Ginley, David S.
- MRS Communications, Vol. 5, Issue 2
Zn 2 SbN 3 : growth and characterization of a metastable photoactive semiconductor
journal, January 2019
- Arca, Elisabetta; Perkins, John D.; Lany, Stephan
- Materials Horizons, Vol. 6, Issue 8
Nitride-based semiconductors for blue and green light-emitting devices
journal, March 1997
- Ponce, F. A.; Bour, D. P.
- Nature, Vol. 386, Issue 6623
Synthesis and Structure of the New Ternary Nitride SrTiN 2
journal, July 1998
- Gregory, D. H.; Barker, M. G.; Edwards, P. P.
- Inorganic Chemistry, Vol. 37, Issue 15
AlGaN/GaN HEMTs-an overview of device operation and applications
journal, June 2002
- Mishra, U. K.; Parikh, P.; Wu, Yi-Feng
- Proceedings of the IEEE, Vol. 90, Issue 6, p. 1022-1031
Theoretical study of phase stability, crystal and electronic structure of MeMgN2 (Me = Ti, Zr, Hf) compounds
journal, November 2017
- Gharavi, M. A.; Armiento, R.; Alling, B.
- Journal of Materials Science, Vol. 53, Issue 6
Amorphous and nanocrystalline titanium nitride and carbonitride materials obtained by solution phase ammonolysis of Ti(NMe2)4
journal, May 2006
- Jackson, Andrew W.; Shebanova, Olga; Hector, Andrew L.
- Journal of Solid State Chemistry, Vol. 179, Issue 5
Exciton photoluminescence and benign defect complex formation in zinc tin nitride
journal, January 2018
- Fioretti, Angela N.; Pan, Jie; Ortiz, Brenden R.
- Materials Horizons, Vol. 5, Issue 5
Monte Carlo simulations of disorder in and the effects on the electronic structure
journal, August 2017
- Lany, Stephan; Fioretti, Angela N.; Zawadzki, Paweł P.
- Physical Review Materials, Vol. 1, Issue 3
The role of the inductive effect in solid state chemistry: how the chemist can use it to modify both the structural and the physical properties of the materials
journal, October 1992
- Etourneau, J.; Portier, J.; Ménil, F.
- Journal of Alloys and Compounds, Vol. 188
Octahedral and trigonal-prismatic coordination preferences in Nb-, Mo-, Ta-, and W-based ABX2 layered oxides, oxynitrides, and nitrides
journal, September 2015
- Miura, Akira; Tadanaga, Kiyoharu; Magome, Eisuke
- Journal of Solid State Chemistry, Vol. 229
Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations
journal, March 2001
- Gall, D.; Städele, M.; Järrendahl, K.
- Physical Review B, Vol. 63, Issue 12
New Method for Calculating the One-Particle Green's Function with Application to the Electron-Gas Problem
journal, August 1965
- Hedin, Lars
- Physical Review, Vol. 139, Issue 3A
Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis
journal, June 2016
- Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu
- Nature Communications, Vol. 7, Issue 1
Dielectric Response: Answer to Many Questions in the Methylammonium Lead Halide Solar Cell Absorbers
journal, May 2017
- Anusca, Irina; Balčiūnas, Sergejus; Gemeiner, Pascale
- Advanced Energy Materials, Vol. 7, Issue 19
Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices
journal, April 2012
- Mourik, V.; Zuo, K.; Frolov, S. M.
- Science, Vol. 336, Issue 6084
GaN/NbN epitaxial semiconductor/superconductor heterostructures
journal, March 2018
- Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh
- Nature, Vol. 555, Issue 7695
Theoretical study on the structural, electronic and physical properties of layered alkaline-earth-group-4 transition-metal nitrides AEMN 2
journal, January 2014
- Orisakwe, Esther; Fontaine, Bruno; Gregory, Duncan H.
- RSC Adv., Vol. 4, Issue 60
Band-structure calculations for the 3 transition metal oxides in
journal, February 2013
- Lany, Stephan
- Physical Review B, Vol. 87, Issue 8
Hard superconducting nitrides
journal, February 2005
- Chen, X. -J.; Struzhkin, V. V.; Wu, Z.
- Proceedings of the National Academy of Sciences, Vol. 102, Issue 9
COMBIgor: Data-Analysis Package for Combinatorial Materials Science
journal, May 2019
- Talley, Kevin R.; Bauers, Sage R.; Melamed, Celeste L.
- ACS Combinatorial Science, Vol. 21, Issue 7
Dislocation reduction in gallium nitride films using scandium nitride interlayers
journal, October 2007
- Moram, M. A.; Zhang, Y.; Kappers, M. J.
- Applied Physics Letters, Vol. 91, Issue 15
Semiconducting cubic titanium nitride in the structure
journal, January 2018
- Bhadram, Venkata S.; Liu, Hanyu; Xu, Enshi
- Physical Review Materials, Vol. 2, Issue 1
Synthesis, Structure, and Magnetic Properties of the New Ternary Nitride BaHfN2and of the BaHf1−xZrxN2Solid Solution
journal, April 1998
- Gregory, D. H.; Barker, M. G.; Edwards, P. P.
- Journal of Solid State Chemistry, Vol. 137, Issue 1
Metal to semiconductor transition and phase stability of Ti Mg N alloys investigated by first-principles calculations
journal, February 2014
- Alling, B.
- Physical Review B, Vol. 89, Issue 8
Temperature dependence of the fundamental band gap of InN
journal, October 2003
- Wu, J.; Walukiewicz, W.; Shan, W.
- Journal of Applied Physics, Vol. 94, Issue 7
Entropy-Driven Clustering in Tetrahedrally Bonded Multinary Materials
journal, March 2015
- Zawadzki, Paweł; Zakutayev, Andriy; Lany, Stephan
- Physical Review Applied, Vol. 3, Issue 3
Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule
journal, May 2015
- Quayle, Paul C.; Blanton, Eric W.; Punya, Atchara
- Physical Review B, Vol. 91, Issue 20
Implementation and performance of the frequency-dependent method within the PAW framework
journal, July 2006
- Shishkin, M.; Kresse, G.
- Physical Review B, Vol. 74, Issue 3
Structure, stability and bonding of ternary transition metal nitrides
journal, December 2009
- Matenoglou, G. M.; Koutsokeras, L. E.; Lekka, Ch. E.
- Surface and Coatings Technology, Vol. 204, Issue 6-7
A map of the inorganic ternary metal nitrides
journal, June 2019
- Sun, Wenhao; Bartel, Christopher J.; Arca, Elisabetta
- Nature Materials, Vol. 18, Issue 7
Figures / Tables found in this record: