Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Casamento, Joseph; Baksa, Steven M.; Behrendt, Drew; Calderon, Sebastian; Goodling, Devin; Hayden, John; He, Fan; Jacques, Leonard; Lee, Seung Hoon; Smith, Walter; Suceava, Albert; Tran, Quyen; Zheng, Xiaojun; Zu, Rui; Beechem, Thomas; Dabo, Ismaila; Dickey, Elizabeth C.; Esteves, Giovanni; Gopalan, Venkatraman; Henry, Michael David; Ihlefeld, Jon F.; Jackson, Thomas N.; Kalinin, Sergei V.; Kelley, Kyle P.; Liu, Yongtao; Rappe, Andrew M.; Redwing, Joan; Trolier-McKinstry, Susan; Maria, Jon-Paul

doi:10.1063/5.0185066

Title: Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Journal Article · 20 February 2024 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0185066 · OSTI ID:2326287

^[1];

^[2];

^[3]; Goodling, Devin ^[1];

^[1];

^[4];

^[1];

^[4];

^[1];

^[3];

^[5];

^[1];

^[5] more »

Pennsylvania State Univ., University Park, PA (United States)
Univ. of Pennsylvania, Philadelphia, PA (United States)
Carnegie Mellon Univ., Pittsburgh, PA (United States)
Purdue Univ., West Lafayette, IN (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Univ. of Virginia, Charlottesville, VA (United States)
Univ. of Tennessee, Knoxville, TN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ~135 μC/cm² charge in Al_1-xB_xN via electron microscopy, Al_1-xB_xN ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn_1-xMg_xO. In conclusion, the main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); Defense Advanced Research Projects Agency (DARPA)

Grant/Contract Number:: NA0003525; SC0021118

OSTI ID:: 2326287

Report Number(s):: SAND--2024-03398J

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 124; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (118)

From Fully Strained to Relaxed: Epitaxial Ferroelectric Al _1‐ _x Sc _x N for III‐N Technology Schönweger, Georg; Petraru, Adrian; Islam, Md Redwanul Advanced Functional Materials, Vol. 32, Issue 21 https://doi.org/10.1002/adfm.202109632	journal	February 2022
InGaN‐based blue/green LEDs and laser diodes Nakamura, Shuji Advanced Materials, Vol. 8, Issue 8 https://doi.org/10.1002/adma.19960080821	journal	August 1996
Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering Akiyama, Morito; Kamohara, Toshihiro; Kano, Kazuhiko Advanced Materials, Vol. 21, Issue 5 https://doi.org/10.1002/adma.200802611	journal	December 2008
Toward High-Quality Epitaxial LiNbO ₃ and LiTaO ₃ Thin Films for Acoustic and Optical Applications Bartasyte, Ausrine; Margueron, Samuel; Baron, Thomas Advanced Materials Interfaces, Vol. 4, Issue 8 https://doi.org/10.1002/admi.201600998	journal	March 2017
In‐Grain Ferroelectric Switching in Sub‐5 nm Thin Al_0.74Sc_0.26N Films at 1 V Schönweger, Georg; Wolff, Niklas; Islam, Md Redwanul Advanced Science, Vol. 10, Issue 25 https://doi.org/10.1002/advs.202302296	journal	June 2023
Wake‐Up in Al ₁₋ _x B _x N Ferroelectric Films Zhu, Wanlin; He, Fan; Hayden, John Advanced Electronic Materials, Vol. 8, Issue 6 https://doi.org/10.1002/aelm.202100931	journal	December 2021
Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture): Invention of the efficient blue InGaN LEDs Nakamura, Shuji Annalen der Physik, Vol. 527, Issue 5-6 https://doi.org/10.1002/andp.201500801	journal	April 2015
Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn_1‐_xMg_xO Thin Films through Engineering Electronic and Ionic Anharmonicities Zu, Rui; Ryu, Gyunghyun; Kelley, Kyle P. Advanced Physics Research, Vol. 2, Issue 12 https://doi.org/10.1002/apxr.202300003	journal	May 2023
Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures Alevli, Mustafa; Ozgit, Cagla; Donmez, Inci physica status solidi (a), Vol. 209, Issue 2 https://doi.org/10.1002/pssa.201127430	journal	November 2011
Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces Sandu, Cosmin Silviu; Parsapour, Fazel; Mertin, Stefan physica status solidi (a), Vol. 216, Issue 2 https://doi.org/10.1002/pssa.201800569	journal	October 2018
A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN Peters, Lukas; Margenfeld, Christoph; Krügener, Jan physica status solidi (a), Vol. 220, Issue 16 https://doi.org/10.1002/pssa.202200485	journal	November 2022
Properties of AlN based lateral polarity structures Kirste, Ronny; Mita, Seiji; Hoffmann, Marc P. physica status solidi c, Vol. 11, Issue 2 https://doi.org/10.1002/pssc.201300287	journal	January 2014
Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride Leone, Stefano; Ligl, Jana; Manz, Christian physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 1 https://doi.org/10.1002/pssr.201900535	journal	November 2019
Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al _0.6 Sc _0.4 N Films Using In Situ Optical Emission Spectrometry Drury, Daniel; Yazawa, Keisuke; Mis, Allison physica status solidi (RRL) – Rapid Research Letters, Vol. 15, Issue 5 https://doi.org/10.1002/pssr.202100043	journal	May 2021
Ultrathin Al_1−xSc_xN for Low‐Voltage‐Driven Ferroelectric‐Based Devices Schönweger, Georg; Islam, Md Redwanul; Wolff, Niklas physica status solidi (RRL) – Rapid Research Letters, Vol. 17, Issue 1 https://doi.org/10.1002/pssr.202200312	journal	October 2022
Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition Streicher, Isabel; Leone, Stefano; Kirste, Lutz physica status solidi (RRL) – Rapid Research Letters, Vol. 17, Issue 2 https://doi.org/10.1002/pssr.202200387	journal	November 2022
Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride Leone, Stefano; Streicher, Isabel; Prescher, Mario physica status solidi (RRL) – Rapid Research Letters, Vol. 17, Issue 10 https://doi.org/10.1002/pssr.202300091	journal	April 2023
Modification and detection of domains on ferroelectric PZT films by scanning force microscopy Franke, K.; Besold, J.; Haessler, W. Surface Science, Vol. 302, Issue 1-2 https://doi.org/10.1016/0039-6028(94)91089-8	journal	January 1994
Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials Rodriguez, B. J.; Gruverman, A.; Kingon, A. I. Journal of Crystal Growth, Vol. 246, Issue 3-4 https://doi.org/10.1016/S0022-0248(02)01749-9	journal	December 2002
Properties of AlN grown by plasma enhanced atomic layer deposition Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko Applied Surface Science, Vol. 257, Issue 17 https://doi.org/10.1016/j.apsusc.2011.04.037	journal	June 2011
Solubility study of the halite and wurtzite solid solutions in the MgO-ZnO system within temperature range from 1000 to 1600 °C Xia, Longgong; Liu, Zhihong; Taskinen, Pekka Journal of Alloys and Compounds, Vol. 687 https://doi.org/10.1016/j.jallcom.2016.06.191	journal	December 2016
Overview of band-edge and defect related luminescence in aluminum nitride Koppe, Tristan; Hofsäss, Hans; Vetter, Ulrich Journal of Luminescence, Vol. 178 https://doi.org/10.1016/j.jlumin.2016.05.055	journal	October 2016
Accuracy of Local Polarization Measurements by Scanning Transmission Electron Microscopy Calderon, Sebastian; Funni, Stephen D.; Dickey, Elizabeth C. Microscopy and Microanalysis, Vol. 28, Issue 6 https://doi.org/10.1017/S1431927622012429	journal	December 2022
Why In₂O₃ Can Make 0.7 nm Atomic Layer Thin Transistors Si, Mengwei; Hu, Yaoqiao; Lin, Zehao Nano Letters, Vol. 21, Issue 1 https://doi.org/10.1021/acs.nanolett.0c03967	journal	December 2020
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory Liu, Xiwen; Wang, Dixiong; Kim, Kwan-Ho Nano Letters, Vol. 21, Issue 9 https://doi.org/10.1021/acs.nanolett.0c05051	journal	April 2021
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes Liu, Xiwen; Ting, John; He, Yunfei Nano Letters, Vol. 22, Issue 18 https://doi.org/10.1021/acs.nanolett.2c03169	journal	September 2022
Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond Song, Yiwen; Perez, Carlos; Esteves, Giovanni ACS Applied Materials & Interfaces, Vol. 13, Issue 16 https://doi.org/10.1021/acsami.1c02912	journal	April 2021
Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al_0.72Sc_0.28N Guido, Roberto; Lomenzo, Patrick D.; Islam, Md Redwanul ACS Applied Materials & Interfaces, Vol. 15, Issue 5 https://doi.org/10.1021/acsami.2c18313	journal	January 2023
Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current Lin, Zehao; Si, Mengwei; Askarpour, Vahid ACS Nano, Vol. 16, Issue 12 https://doi.org/10.1021/acsnano.2c10383	journal	November 2022
Switchable Induced Polarization in LaAlO ₃ /SrTiO ₃ Heterostructures Bark, C. W.; Sharma, P.; Wang, Y. Nano Letters, Vol. 12, Issue 4 https://doi.org/10.1021/nl3001088	journal	January 2012
Probing Surface and Bulk Electrochemical Processes on the LaAlO ₃ –SrTiO ₃ Interface Kumar, Amit; Arruda, Thomas M.; Kim, Yunseok ACS Nano, Vol. 6, Issue 5 https://doi.org/10.1021/nn204960c	journal	April 2012
Wurtzite and fluorite ferroelectric materials for electronic memory Kim, Kwan-Ho; Karpov, Ilya; Olsson, Roy H. Nature Nanotechnology, Vol. 18, Issue 5 https://doi.org/10.1038/s41565-023-01361-y	journal	April 2023
Intentional polarity conversion of AlN epitaxial layers by oxygen Stolyarchuk, N.; Markurt, T.; Courville, A. Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-32489-w	journal	September 2018
Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants Anggraini, Sri Ayu; Uehara, Masato; Hirata, Kenji Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-61285-8	journal	March 2020
Nanoscale compositional segregation in epitaxial AlScN on Si (111) Zhang, Xiaoman; Stach, Eric A.; Meng, W. J. Nanoscale Horizons, Vol. 8, Issue 5 https://doi.org/10.1039/D2NH00567K	journal	January 2023
Local chemical origin of ferroelectric behavior in wurtzite nitrides Yazawa, Keisuke; Mangum, John S.; Gorai, Prashun Journal of Materials Chemistry C https://doi.org/10.1039/D2TC02682A	journal	January 2022
Anomalously abrupt switching of wurtzite-structured ferroelectrics: simultaneous non-linear nucleation and growth model Yazawa, Keisuke; Hayden, John; Maria, Jon-Paul Materials Horizons, Vol. 10, Issue 8 https://doi.org/10.1039/D3MH00365E	journal	January 2023
A climbing image nudged elastic band method for finding saddle points and minimum energy paths Henkelman, Graeme; Uberuaga, Blas P.; Jónsson, Hannes The Journal of Chemical Physics, Vol. 113, Issue 22, p. 9901-9904 https://doi.org/10.1063/1.1329672	journal	December 2000
Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures Park, M.; Cuomo, J. J.; Rodriguez, B. J. Journal of Applied Physics, Vol. 93, Issue 12 https://doi.org/10.1063/1.1570507	journal	June 2003
AlGaN/GaN polarization-doped field-effect transistor for microwave power applications Rajan, Siddharth; Xing, Huili; DenBaars, Steve Applied Physics Letters, Vol. 84, Issue 9 https://doi.org/10.1063/1.1652254	journal	March 2004
LiNbO₃: AN EFFICIENT PHASE MATCHABLE NONLINEAR OPTICAL MATERIAL Boyd, G. D.; Miller, Robert C.; Nassau, K. Applied Physics Letters, Vol. 5, Issue 11 https://doi.org/10.1063/1.1723604	journal	December 1964
Microstructural study of epitaxial Zn1−xMgxO composition spreads Bendersky, L. A.; Takeuchi, I.; Chang, K. -S. Journal of Applied Physics, Vol. 98, Issue 8 https://doi.org/10.1063/1.2061887	journal	October 2005
Quantitative mapping of switching behavior in piezoresponse force microscopy Jesse, Stephen; Lee, Ho Nyung; Kalinin, Sergei V. Review of Scientific Instruments, Vol. 77, Issue 7 https://doi.org/10.1063/1.2214699	journal	July 2006
Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films Akiyama, Morito; Kano, Kazuhiko; Teshigahara, Akihiko Applied Physics Letters, Vol. 95, Issue 16 https://doi.org/10.1063/1.3251072	journal	October 2009
Wurtzite structure Sc1−xAlxN solid solution films grown by reactive magnetron sputter epitaxy: Structural characterization and first-principles calculations Höglund, Carina; Birch, Jens; Alling, Björn Journal of Applied Physics, Vol. 107, Issue 12 https://doi.org/10.1063/1.3448235	journal	June 2010
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Kirste, Ronny; Collazo, Ramón; Callsen, Gordon Journal of Applied Physics, Vol. 110, Issue 9 https://doi.org/10.1063/1.3656987	journal	November 2011
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Ambacher, O.; Smart, J.; Shealy, J. R. Journal of Applied Physics, Vol. 85, Issue 6 https://doi.org/10.1063/1.369664	journal	March 1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures Ambacher, O.; Foutz, B.; Smart, J. Journal of Applied Physics, Vol. 87, Issue 1 https://doi.org/10.1063/1.371866	journal	January 2000
Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN Li, Shibin; Ware, Morgan; Wu, Jiang Applied Physics Letters, Vol. 101, Issue 12 https://doi.org/10.1063/1.4753993	journal	September 2012
Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy Nepal, N.; Qadri, S. B.; Hite, J. K. Applied Physics Letters, Vol. 103, Issue 8 https://doi.org/10.1063/1.4818792	journal	August 2013
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides Zhang, Siyuan; Holec, David; Fu, Wai Yuen Journal of Applied Physics, Vol. 114, Issue 13 https://doi.org/10.1063/1.4824179	journal	October 2013
Ferroelectricity in wurtzite structure simple chalcogenide Moriwake, Hiroki; Konishi, Ayako; Ogawa, Takafumi Applied Physics Letters, Vol. 104, Issue 24 https://doi.org/10.1063/1.4884596	journal	June 2014
Mechanism of polarization switching in wurtzite-structured zinc oxide thin films Konishi, Ayako; Ogawa, Takafumi; Fisher, Craig A. J. Applied Physics Letters, Vol. 109, Issue 10 https://doi.org/10.1063/1.4962440	journal	September 2016
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures Islam, S. M.; Lee, Kevin; Verma, Jai Applied Physics Letters, Vol. 110, Issue 4 https://doi.org/10.1063/1.4975068	journal	January 2017
AlScN: A III-V semiconductor based ferroelectric Fichtner, Simon; Wolff, Niklas; Lofink, Fabian Journal of Applied Physics, Vol. 125, Issue 11 https://doi.org/10.1063/1.5084945	journal	March 2019
Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators Kurz, Nicolas; Ding, Anli; Urban, Daniel F. Journal of Applied Physics, Vol. 126, Issue 7 https://doi.org/10.1063/1.5094611	journal	August 2019
Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination Maeda, Takuya; Narita, Tetsuo; Ueda, Hiroyuki Applied Physics Letters, Vol. 115, Issue 14 https://doi.org/10.1063/1.5114844	journal	September 2019
Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center Zhou, Qin; Zhang, Zhaofu; Li, Hui APL Materials, Vol. 8, Issue 8 https://doi.org/10.1063/5.0012685	journal	August 2020
Structural and piezoelectric properties of ultra-thin Sc _x Al _1−x N films grown on GaN by molecular beam epitaxy Casamento, Joseph; Chang, Celesta S.; Shao, Yu-Tsun Applied Physics Letters, Vol. 117, Issue 11 https://doi.org/10.1063/5.0013943	journal	September 2020
Extrinsic contributions to the dielectric and pyroelectric properties of Pb _0.99 [(Zr _0.52 Ti _0.48 ) _0.98 Nb _0.02 ]O ₃ thin films on Si and Ni substrates Coleman, K.; Shetty, S.; Hanrahan, B. Journal of Applied Physics, Vol. 128, Issue 11 https://doi.org/10.1063/5.0014405	journal	September 2020
Effects of deposition conditions on the ferroelectric properties of (Al _{1− x} Sc _x )N thin films Yasuoka, Shinnosuke; Shimizu, Takao; Tateyama, Akinori Journal of Applied Physics, Vol. 128, Issue 11 https://doi.org/10.1063/5.0015281	journal	September 2020
A computational search for wurtzite-structured ferroelectrics with low coercive voltages Moriwake, Hiroki; Yokoi, Rie; Taguchi, Ayako APL Materials, Vol. 8, Issue 12 https://doi.org/10.1063/5.0023626	journal	December 2020
Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN Wolff, Niklas; Fichtner, Simon; Haas, Benedikt Journal of Applied Physics, Vol. 129, Issue 3 https://doi.org/10.1063/5.0033205	journal	January 2021
On the exceptional temperature stability of ferroelectric Al _1-x Sc _x N thin films Islam, Md. Redwanul; Wolff, Niklas; Yassine, Mohamed Applied Physics Letters, Vol. 118, Issue 23 https://doi.org/10.1063/5.0053649	journal	June 2021
Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films Ferri, Kevin; Bachu, Saiphaneendra; Zhu, Wanlin Journal of Applied Physics, Vol. 130, Issue 4 https://doi.org/10.1063/5.0053755	journal	July 2021
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy Wang, Ping; Wang, Ding; Vu, Nguyen M. Applied Physics Letters, Vol. 118, Issue 22 https://doi.org/10.1063/5.0054539	journal	May 2021
Strongly temperature dependent ferroelectric switching in AlN, Al _1-x Sc _x N, and Al _1-x B _x N thin films Zhu, Wanlin; Hayden, John; He, Fan Applied Physics Letters, Vol. 119, Issue 6 https://doi.org/10.1063/5.0057869	journal	August 2021
Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy Wang, Ding; Wang, Ping; Wang, Boyu Applied Physics Letters, Vol. 119, Issue 11 https://doi.org/10.1063/5.0060021	journal	September 2021
Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN Wang, Ping; Wang, Ding; Bi, Yutong Applied Physics Letters, Vol. 120, Issue 1 https://doi.org/10.1063/5.0060608	journal	January 2022
Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al_1−xSc_xN thin films Yoshioka, Valerie; Lu, Jian; Tang, Zichen APL Materials, Vol. 9, Issue 10 https://doi.org/10.1063/5.0061787	journal	October 2021
On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC Zhang, Hengfang; Persson, Ingemar; Papamichail, Alexis Journal of Applied Physics, Vol. 131, Issue 5 https://doi.org/10.1063/5.0074010	journal	February 2022
Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties Casamento, Joseph; Lee, Hyunjea; Maeda, Takuya Applied Physics Letters, Vol. 120, Issue 15 https://doi.org/10.1063/5.0075636	journal	April 2022
Strong electro-optic effect in Mg incorporated ZnO thin films Yuan, X.; Yamada, T.; Meng, L. Applied Physics Letters, Vol. 121, Issue 15 https://doi.org/10.1063/5.0103831	journal	October 2022
Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT Wang, Ding; Wang, Ping; He, Minming Applied Physics Letters, Vol. 122, Issue 9 https://doi.org/10.1063/5.0143645	journal	February 2023
Doping effects on the ferroelectric properties of wurtzite nitrides Liu, Zhijie; Wang, Xinyu; Ma, Xingyue Applied Physics Letters, Vol. 122, Issue 12 https://doi.org/10.1063/5.0145818	journal	March 2023
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices Silva, José P. B.; Alcala, Ruben; Avci, Uygar E. APL Materials, Vol. 11, Issue 8 https://doi.org/10.1063/5.0148068	journal	August 2023
Ferroelectric YAlN grown by molecular beam epitaxy Wang, Ding; Mondal, Shubham; Liu, Jiangnan Applied Physics Letters, Vol. 123, Issue 3 https://doi.org/10.1063/5.0159562	journal	July 2023
Sub-quarter micrometer periodically poled Al0.68Sc0.32N for ultra-wideband photonics and acoustic devices Tang, Zichen; Esteves, Giovanni; Olsson, Roy H. Journal of Applied Physics, Vol. 134, Issue 11 https://doi.org/10.1063/5.0161423	journal	September 2023
Evaluation of the impact of abnormal grains on the performance of Sc_0.15Al_0.85N-based BAW resonators and filters Liu, Chen; Li, Minghua; Chen, Bangtao Journal of Micromechanics and Microengineering, Vol. 32, Issue 3 https://doi.org/10.1088/1361-6439/ac4826	journal	January 2022
Real-time studies of ferroelectric domain switching: a review Li, Linze; Xie, Lin; Pan, Xiaoqing Reports on Progress in Physics, Vol. 82, Issue 12 https://doi.org/10.1088/1361-6633/ab28de	journal	November 2019
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition Manz, Christian; Leone, Stefano; Kirste, Lutz Semiconductor Science and Technology, Vol. 36, Issue 3 https://doi.org/10.1088/1361-6641/abd924	journal	January 2021
Dawn of nitride ferroelectric semiconductors: from materials to devices Wang, Ping; Wang, Ding; Mondal, Shubham Semiconductor Science and Technology, Vol. 38, Issue 4 https://doi.org/10.1088/1361-6641/acb80e	journal	March 2023
Post-2000 nonlinear optical materials and measurements: Data tables and best practices Vermeulen, Nathalie; Espinosa, Daniel; Ball, Adam Journal of Physics: Photonics https://doi.org/10.1088/2515-7647/ac9e2f	journal	October 2022
Disentangling Tilt and Polarization Measurements in 4D-STEM Measurements of a Multilayer by Inversion of a Stacked Bloch Wave Model Zeltmann, Steven E.; Hsu, Shang-Lin; Brown, Hamish G. Microscopy and Microanalysis, Vol. 29, Issue Supplement_1 https://doi.org/10.1093/micmic/ozad067.115	journal	July 2023
Polarity Control in Group-III Nitrides beyond Pragmatism Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni Physical Review Applied, Vol. 5, Issue 5 https://doi.org/10.1103/PhysRevApplied.5.054004	journal	May 2016
Theory of polarization of crystalline solids King-Smith, R. D.; Vanderbilt, David Physical Review B, Vol. 47, Issue 3 https://doi.org/10.1103/PhysRevB.47.1651	journal	January 1993
Electric polarization as a bulk quantity and its relation to surface charge Vanderbilt, David; King-Smith, R. D. Physical Review B, Vol. 48, Issue 7 https://doi.org/10.1103/PhysRevB.48.4442	journal	August 1993
Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films Tagantsev, Alexander K.; Stolichnov, Igor; Setter, Nava Physical Review B, Vol. 66, Issue 21 https://doi.org/10.1103/PhysRevB.66.214109	journal	December 2002
Origin of the Anomalous Piezoelectric Response in Wurtzite Sc x Al 1 − x N Alloys Tasnádi, Ferenc; Alling, Björn; Höglund, Carina Physical Review Letters, Vol. 104, Issue 13 https://doi.org/10.1103/PhysRevLett.104.137601	journal	April 2010
Ferroelectricity in boron-substituted aluminum nitride thin films Hayden, John; Hossain, Mohammad Delower; Xiong, Yihuang Physical Review Materials, Vol. 5, Issue 4 https://doi.org/10.1103/PhysRevMaterials.5.044412	journal	April 2021
Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides Dreyer, Cyrus E.; Janotti, Anderson; Van de Walle, Chris G. Physical Review X, Vol. 6, Issue 2 https://doi.org/10.1103/PhysRevX.6.021038	journal	June 2016
1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability Nomoto, Kazuki; Song, Bo; Hu, Zongyang IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2506638	journal	February 2016
High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs Hickman, Austin; Chaudhuri, Reet; Bader, Samuel James IEEE Electron Device Letters, Vol. 40, Issue 8 https://doi.org/10.1109/LED.2019.2923085	journal	August 2019
A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al_0.72Sc_0.28N IEEE Electron Device Letters, Vol. 44, Issue 7 https://doi.org/10.1109/LED.2023.3282170	journal	July 2023
Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric Yang, Jeong Yong; Oh, Seung Yoon; Yeom, Min Jae IEEE Electron Device Letters, Vol. 44, Issue 8 https://doi.org/10.1109/LED.2023.3287913	journal	August 2023
Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications Then, Han Wui; Radosavljevic, M.; Yu, Q. IEEE Microwave and Wireless Technology Letters, Vol. 33, Issue 6 https://doi.org/10.1109/LMWT.2023.3268184	journal	June 2023
A mm-Wave Trilayer AlN/ScAlN/AlN Higher Order Mode FBAR Nam, Suhyun; Peng, Wenhao; Wang, Ping IEEE Microwave and Wireless Technology Letters, Vol. 33, Issue 6 https://doi.org/10.1109/LMWT.2023.3271865	journal	June 2023
Plasma enhanced atomic layer deposition of textured aluminum nitride on platinized substrates for MEMS Strnad, Nicholas A.; Sarney, Wendy L.; Rayner, Gilbert B. Journal of Vacuum Science & Technology A, Vol. 40, Issue 4 https://doi.org/10.1116/6.0001633	journal	May 2022
Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures Simon, J.; Protasenko, V.; Lian, C. Science, Vol. 327, Issue 5961 https://doi.org/10.1126/science.1183226	journal	December 2009
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells Chaudhuri, Reet; Bader, Samuel James; Chen, Zhen Science, Vol. 365, Issue 6460 https://doi.org/10.1126/science.aau8623	journal	September 2019
Atomic-scale polarization switching in wurtzite ferroelectrics Calderon, Sebastian; Hayden, John; Baksa, Steven M. Science, Vol. 380, Issue 6649 https://doi.org/10.1126/science.adh7670	journal	June 2023
Hole Compensation Mechanism of P-Type GaN Films Nakamura, Shuji; Iwasa, Naruhito; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 5A https://doi.org/10.1143/JJAP.31.1258	journal	May 1992
Thermal Annealing Effects on P-Type Mg-Doped GaN Films Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 2B https://doi.org/10.1143/JJAP.31.L139	journal	February 1992
Scanning Force Microscopy Studies of Domain Structure in B a T i O ₃ Single Crystals Gruverman, Alexei L.; Hatano, Jun; Tokumoto, Hiroshi Japanese Journal of Applied Physics, Vol. 36, Issue Part 1, No. 4A https://doi.org/10.1143/JJAP.36.2207	journal	April 1997
Note on Ferroelectric Domain Switching Ishibashi, Yoshihiro; Takagi, Yutaka Journal of the Physical Society of Japan, Vol. 31, Issue 2 https://doi.org/10.1143/JPSJ.31.506	journal	August 1971
Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics Liu, Xianwen; Bruch, Alexander W.; Tang, Hong. X. Advances in Optics and Photonics, Vol. 15, Issue 1 https://doi.org/10.1364/AOP.479017	journal	March 2023
Second harmonic generation in gallium phosphide nano-waveguides Anthur, Aravind P.; Zhang, Haizhong; Akimov, Yuriy Optics Express, Vol. 29, Issue 7 https://doi.org/10.1364/OE.409758	journal	March 2021
Enhancement of second-order optical nonlinearities and nanoscale periodic domain patterning in ferroelectric boron-substituted aluminum nitride thin films Suceava, Albert; Hayden, John; Kelley, Kyle P. Optical Materials Express, Vol. 13, Issue 6 https://doi.org/10.1364/OME.488459	journal	May 2023
Oxygen incorporation in aluminum nitride via extended defects: Part I. Refinement of the structural model for the planar inversion domain boundary Westwood, Alistair D.; Youngman, Robert A.; McCartney, Martha R. Journal of Materials Research, Vol. 10, Issue 5 https://doi.org/10.1557/JMR.1995.1270	journal	May 1995
Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories Ham, Ilsik; Jeong, Youngseok; Baik, Seung Jae Electronics, Vol. 10, Issue 1 https://doi.org/10.3390/electronics10010038	journal	December 2020
Growth of Highly c-Axis Oriented AlScN Films on Commercial Substrates Su, Jingxiang; Fichtner, Simon; Ghori, Muhammad Zubair Micromachines, Vol. 13, Issue 5 https://doi.org/10.3390/mi13050783	journal	May 2022
High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N Drury, Daniel; Yazawa, Keisuke; Zakutayev, Andriy Micromachines, Vol. 13, Issue 6 https://doi.org/10.3390/mi13060887	journal	May 2022
A possible origin of the large leakage current in ferroelectric Al _1−x Sc _x N films Kataoka, Junji; Tsai, Sung-Lin; Hoshii, Takuya Japanese Journal of Applied Physics, Vol. 60, Issue 3 https://doi.org/10.35848/1347-4065/abe644	journal	February 2021
Fabrication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs Uesugi, Kenjiro; Miyake, Hideto Japanese Journal of Applied Physics, Vol. 60, Issue 12 https://doi.org/10.35848/1347-4065/ac3026	journal	December 2021
Field cycling behavior and breakdown mechanism of ferroelectric Al_0.78Sc_0.22N films Tsai, Sung-Lin; Hoshii, Takuya; Wakabayashi, Hitoshi Japanese Journal of Applied Physics, Vol. 61, Issue SJ https://doi.org/10.35848/1347-4065/ac54f6	journal	June 2022
Polarity tuning of crystalline AlN films utilizing trace oxygen involved sputtering and post-high-temperature annealing Liu, Zhibin; Guo, Yanan; Yan, Jianchang Applied Physics Express, Vol. 14, Issue 8 https://doi.org/10.35848/1882-0786/ac114d	journal	July 2021
A 271.8 nm deep-ultraviolet laser diode for room temperature operation Zhang, Ziyi; Kushimoto, Maki; Sakai, Tadayoshi Applied Physics Express, Vol. 12, Issue 12 https://doi.org/10.7567/1882-0786/ab50e0	journal	November 2019
Effects of lattice parameters on piezoelectric constants in wurtzite materials: A theoretical study using first-principles and statistical-learning methods Momida, Hiroyoshi; Oguchi, Tamio Applied Physics Express, Vol. 11, Issue 4 https://doi.org/10.7567/APEX.11.041201	journal	February 2018

Similar Records

Atomic-scale polarization switching in wurtzite ferroelectrics

Journal Article · 2023 · Science · OSTI ID:1988156

Calderon, Sebastian; Hayden, John; Baksa, Steven M.; +5 more

Proximity ferroelectricity in wurtzite heterostructures

Journal Article · 2025 · Nature (London) · OSTI ID:2570083

Skidmore, Chloe H.; Spurling, R. Jackson; Hayden, John; +15 more

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Journal Article · 2024 · Science Advances · OSTI ID:2370393

Lee, Cheng-Wei; Yazawa, Keisuke; Zakutayev, Andriy; +2 more

Related Subjects

30 DIRECT ENERGY CONVERSION

Title: Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Citation Formats

References (118)

Similar Records

Related Subjects