Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells
Abstract
Thin-film solar cells consisting of earth-abundant and non-toxic materials were created from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were investigated for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.
- Authors:
-
- Harvard Univ., Cambridge, MA (United States)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; National Science Foundation (NSF)
- OSTI Identifier:
- 1557830
- Grant/Contract Number:
- EE0005329
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Progress in Photovoltaics
- Additional Journal Information:
- Journal Volume: 23; Journal Issue: 7; Journal ID: ISSN 1062-7995
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SnS thin‐film solar cell; zinc oxysulfide; buffer layer; atomic layer deposition; pulsed‐chemical vapor deposition
Citation Formats
Park, Helen Hejin, Heasley, Rachel, Sun, Leizhi, Steinmann, Vera, Jaramillo, Rafael, Hartman, Katy, Chakraborty, Rupak, Sinsermsuksakul, Prasert, Chua, Danny, Buonassisi, Tonio, and Gordon, Roy G. Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells. United States: N. p., 2014.
Web. doi:10.1002/pip.2504.
Park, Helen Hejin, Heasley, Rachel, Sun, Leizhi, Steinmann, Vera, Jaramillo, Rafael, Hartman, Katy, Chakraborty, Rupak, Sinsermsuksakul, Prasert, Chua, Danny, Buonassisi, Tonio, & Gordon, Roy G. Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells. United States. https://doi.org/10.1002/pip.2504
Park, Helen Hejin, Heasley, Rachel, Sun, Leizhi, Steinmann, Vera, Jaramillo, Rafael, Hartman, Katy, Chakraborty, Rupak, Sinsermsuksakul, Prasert, Chua, Danny, Buonassisi, Tonio, and Gordon, Roy G. Mon .
"Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells". United States. https://doi.org/10.1002/pip.2504. https://www.osti.gov/servlets/purl/1557830.
@article{osti_1557830,
title = {Co-optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells: SnS absorber and Zn(O,S) buffer materials for improved solar cells},
author = {Park, Helen Hejin and Heasley, Rachel and Sun, Leizhi and Steinmann, Vera and Jaramillo, Rafael and Hartman, Katy and Chakraborty, Rupak and Sinsermsuksakul, Prasert and Chua, Danny and Buonassisi, Tonio and Gordon, Roy G.},
abstractNote = {Thin-film solar cells consisting of earth-abundant and non-toxic materials were created from pulsed chemical vapor deposition (pulsed-CVD) of SnS as the p-type absorber layer and atomic layer deposition (ALD) of Zn(O,S) as the n-type buffer layer. The effects of deposition temperature and annealing conditions of the SnS absorber layer were investigated for solar cells with a structure of Mo/SnS/Zn(O,S)/ZnO/ITO. Solar cells were further optimized by varying the stoichiometry of Zn(O,S) and the annealing conditions of SnS. Post-deposition annealing in pure hydrogen sulfide improved crystallinity and increased the carrier mobility by one order of magnitude, and a power conversion efficiency up to 2.9% was achieved.},
doi = {10.1002/pip.2504},
journal = {Progress in Photovoltaics},
number = 7,
volume = 23,
place = {United States},
year = {Mon May 05 00:00:00 EDT 2014},
month = {Mon May 05 00:00:00 EDT 2014}
}
Web of Science
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