Sign-Reversing Hall Effect in Atomically Thin High-Temperature Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]
Abstract
We developed novel techniques to fabricate atomically thin Bi2.1Sr1.9CaCu2.0O8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature Tc close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance E-xy as in the bulk system, spanning both below and above Tc . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental Rxy (T, B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc .
- Authors:
-
[2];
- Harvard Univ., Cambridge, MA (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- National Institute for Materials Science, Ibaraki (Japan)
- Institute for Physics of Microstructures RAS, Nizhny Novgorod (Russia); Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk (Russia)
- Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, Chicago, IL (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Gordon and Betty Moore Foundation; National Science Foundation (NSF); Natural Sciences and Engineering Research Council of Canada (NSERC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1557711
- Alternate Identifier(s):
- OSTI ID: 1543282; OSTI ID: 1546407
- Report Number(s):
- BNL-211946-2019-JAAM
Journal ID: ISSN 0031-9007; PRLTAO
- Grant/Contract Number:
- SC0012704; AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 122; Journal Issue: 24; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., and Kim, Philip. Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]. United States: N. p., 2019.
Web. doi:10.1103/PhysRevLett.122.247001.
Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., & Kim, Philip. Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]. United States. https://doi.org/10.1103/PhysRevLett.122.247001
Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., and Kim, Philip. Thu .
"Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]". United States. https://doi.org/10.1103/PhysRevLett.122.247001. https://www.osti.gov/servlets/purl/1557711.
@article{osti_1557711,
title = {Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]},
author = {Zhao, S. Y. Frank and Poccia, Nicola and Panetta, Margaret G. and Yu, Cyndia and Johnson, Jedediah W. and Yoo, Hyobin and Zhong, Ruidan and Gu, G. D. and Watanabe, Kenji and Taniguchi, Takashi and Postolova, Svetlana V. and Vinokur, Valerii M. and Kim, Philip},
abstractNote = {We developed novel techniques to fabricate atomically thin Bi2.1Sr1.9CaCu2.0O8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature Tc close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance E-xy as in the bulk system, spanning both below and above Tc . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental Rxy (T, B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc .},
doi = {10.1103/PhysRevLett.122.247001},
journal = {Physical Review Letters},
number = 24,
volume = 122,
place = {United States},
year = {2019},
month = {6}
}
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High-temperature superconductivity in monolayer Bi2Sr2CaCu2O8+δ
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