Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor FeSe/SrTiO3

Sims, Hunter; Leonard, Donovan N.; Birenbaum, Axiel Yaël L.; Ge, Zhuozhi; Berlijn, Tom; Li, Lian; Cooper, Valentino R.; Chisholm, Matthew F.; Pantelides, Sokrates T.

doi:10.1103/PhysRevB.100.144103

Title: Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor ${FeSe / SrTiO}_{3}$

Journal Article · 13 October 2019 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.100.144103 · OSTI ID:1598152

^[1];

^[2];

^[2]; Ge, Zhuozhi ^[3];

^[2]; Li, Lian ^[3];

^[2];

^[2]; Pantelides, Sokrates T. ^[4]

Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt University
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
West Virginia Univ., Morgantown, WV (United States)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The sensitive dependence of monolayer materials on their environment often gives rise to unexpected properties. It was recently demonstrated that monolayer FeSe on a SrTiO₃ substrate exhibits a much higher superconducting critical temperature TC than the bulk material. Here, we examine the interfacial structure of FeSe / SrTiO₃ and the effect of an interfacial Ti_1+xO₂ layer on the increased T_C using a combination of scanning transmission electron microscopy and density functional theory. We find Ti_1+xO₂ forms its own quasi-two-dimensional layer, bonding to both the substrate and the FeSe film by van der Waals interactions. The excess Ti in this layer electron-dopes the FeSe monolayer in agreement with experimental observations. Moreover, the interfacial layer introduces symmetry-breaking distortions in the FeSe film that favor a T_C increase. These results suggest that this common substrate may be functionalized to modify the electronic structure of a variety of thin films and monolayers.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725; FG02-09ER46554

OSTI ID:: 1598152

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 14 Vol. 100; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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