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Title: Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi 2.1 Sr 1.9 CaCu 2.0 O 8 + δ Superconductors

Abstract

We developed novel techniques to fabricate atomically thin Bi 2.1Sr 1.9CaCu 2.0O 8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature Tc close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance E-xy as in the bulk system, spanning both below and above Tc . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental R xy ( T, B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc .

Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
Gordon and Betty Moore Foundation; National Science Foundation (NSF); Natural Sciences and Engineering Research Council of Canada (NSERC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1557711
Alternate Identifier(s):
OSTI ID: 1543282; OSTI ID: 1546407
Report Number(s):
BNL-211946-2019-JAAM
Journal ID: ISSN 0031-9007; PRLTAO; 147385
Grant/Contract Number:  
AC02-06CH11357; SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 122; Journal Issue: 24; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., and Kim, Philip. Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.122.247001.
Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., & Kim, Philip. Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors. United States. doi:10.1103/PhysRevLett.122.247001.
Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., and Kim, Philip. Sat . "Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors". United States. doi:10.1103/PhysRevLett.122.247001.
@article{osti_1557711,
title = {Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors},
author = {Zhao, S. Y. Frank and Poccia, Nicola and Panetta, Margaret G. and Yu, Cyndia and Johnson, Jedediah W. and Yoo, Hyobin and Zhong, Ruidan and Gu, G. D. and Watanabe, Kenji and Taniguchi, Takashi and Postolova, Svetlana V. and Vinokur, Valerii M. and Kim, Philip},
abstractNote = {We developed novel techniques to fabricate atomically thin Bi2.1Sr1.9CaCu2.0O8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature Tc close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance E-xy as in the bulk system, spanning both below and above Tc . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental Rxy (T, B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc .},
doi = {10.1103/PhysRevLett.122.247001},
journal = {Physical Review Letters},
number = 24,
volume = 122,
place = {United States},
year = {2019},
month = {6}
}

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