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Title: Low-threshold lasing action in photonic crystal slabs enabled by Fano resonances

Abstract

We present a theoretical analysis of lasing action in photonic crystal surface-emitting lasers (PCSELs). The semiclassical laser equations for such structures are simulated with three different theoretical techniques: exact finite-difference time-domain calculations, an steady-state ab-initio laser theory and a semi-analytical coupled-mode formalism. Furthermore, our simulations show that, for an exemplary four-level gain model, the excitation of dark Fano resonances featuring arbitrarily large quality factors can lead to a significant reduction of the lasing threshold of PCSELs with respect to conventional vertical-cavity surface-emitting lasers. Our calculations also suggest that at the onset of lasing action, most of the laser power generated by finite-size PCSELs is emitted in the photonic crystal plane rather than the vertical direction. In addition to their fundamental interest, these findings may affect further engineering of active devices based on photonic crystal slabs.

Authors:
 [1];  [2];  [2];  [1];  [3]
+ Show Author Affiliations
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Yale Univ., New Haven, CT (United States)
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Univ. Autonoma de Madrid, Madrid (Spain)
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1557570
Grant/Contract Number:  
SC0001299
Resource Type:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 19; Journal Issue: 2; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Chua, Song -Liang, Chong, Yidong, Stone, A. Douglas, Soljacic, Marin, and Bravo-Abad, Jorge. Low-threshold lasing action in photonic crystal slabs enabled by Fano resonances. United States: N. p., 2011. Web. doi:10.1364/OE.19.001539.
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Chua, Song -Liang, Chong, Yidong, Stone, A. Douglas, Soljacic, Marin, & Bravo-Abad, Jorge. Low-threshold lasing action in photonic crystal slabs enabled by Fano resonances. United States. https://doi.org/10.1364/OE.19.001539
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Chua, Song -Liang, Chong, Yidong, Stone, A. Douglas, Soljacic, Marin, and Bravo-Abad, Jorge. Thu . "Low-threshold lasing action in photonic crystal slabs enabled by Fano resonances". United States. https://doi.org/10.1364/OE.19.001539. https://www.osti.gov/servlets/purl/1557570.
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@article{osti_1557570,
title = {Low-threshold lasing action in photonic crystal slabs enabled by Fano resonances},
author = {Chua, Song -Liang and Chong, Yidong and Stone, A. Douglas and Soljacic, Marin and Bravo-Abad, Jorge},
abstractNote = {We present a theoretical analysis of lasing action in photonic crystal surface-emitting lasers (PCSELs). The semiclassical laser equations for such structures are simulated with three different theoretical techniques: exact finite-difference time-domain calculations, an steady-state ab-initio laser theory and a semi-analytical coupled-mode formalism. Furthermore, our simulations show that, for an exemplary four-level gain model, the excitation of dark Fano resonances featuring arbitrarily large quality factors can lead to a significant reduction of the lasing threshold of PCSELs with respect to conventional vertical-cavity surface-emitting lasers. Our calculations also suggest that at the onset of lasing action, most of the laser power generated by finite-size PCSELs is emitted in the photonic crystal plane rather than the vertical direction. In addition to their fundamental interest, these findings may affect further engineering of active devices based on photonic crystal slabs.},
doi = {10.1364/OE.19.001539},
journal = {Optics Express},
number = 2,
volume = 19,
place = {United States},
year = {Thu Jan 13 00:00:00 EST 2011},
month = {Thu Jan 13 00:00:00 EST 2011}
}
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https://doi.org/10.1364/OE.19.001539
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