Polymorphism controls the degree of charge transfer in a molecularly doped semiconducting polymer
Abstract
When an organic semiconductor (OSC) is blended with an electron acceptor molecule that can act as a p-type dopant, there should ideally be complete (integer) transfer of charge from the OSC to the dopant. However, some dopant–OSC blends instead form charge transfer complexes (CTCs), characterized by fractional charge transfer (CT) and strong orbital hybridization between the two molecules. Fractional CT doping does not efficiently generate free charge carriers, but it is unclear what conditions lead to incomplete charge transfer. Here we show that by modifying film processing conditions in the semiconductor–dopant couple poly(3-hexylthiophene):2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (P3HT:F4TCNQ), we can selectively obtain nearly pure integer or fractional CT phases. Fractional CT films show electrical conductivities approximately 2 orders of magnitude lower than corresponding integer CT films, and remarkably different optical absorption spectra. Grazing incidence wide-angle X-ray diffraction (GIXD) reveals that fractional CT films display an unusually dense and well-ordered crystal structure. These films show lower paracrystallinity and shorter lamellar and π-stacking distances than undoped films processed under similar conditions. Using plane-wave DFT we obtain a structure with unit cell parameters closely matching those observed by GIXD. This first-ever observation of both fractional and integer CT in a single OSC–dopant system demonstrates the importance ofmore »
- Authors:
-
- Univ. of California, Davis, CA (United States)
- Stanford Univ., CA (United States)
- Publication Date:
- Research Org.:
- Univ. of California, Davis, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1540056
- Alternate Identifier(s):
- OSTI ID: 1434112
- Grant/Contract Number:
- SC0010419; CMMI-1636385; CBET-1510481; ECCS-1542152
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Materials Horizons
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 4; Journal ID: ISSN 2051-6347
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE
Citation Formats
Jacobs, Ian E., Cendra, Camila, Harrelson, Thomas F., Bedolla Valdez, Zaira I., Faller, Roland, Salleo, Alberto, and Moulé, Adam J. Polymorphism controls the degree of charge transfer in a molecularly doped semiconducting polymer. United States: N. p., 2018.
Web. doi:10.1039/c8mh00223a.
Jacobs, Ian E., Cendra, Camila, Harrelson, Thomas F., Bedolla Valdez, Zaira I., Faller, Roland, Salleo, Alberto, & Moulé, Adam J. Polymorphism controls the degree of charge transfer in a molecularly doped semiconducting polymer. United States. https://doi.org/10.1039/c8mh00223a
Jacobs, Ian E., Cendra, Camila, Harrelson, Thomas F., Bedolla Valdez, Zaira I., Faller, Roland, Salleo, Alberto, and Moulé, Adam J. Mon .
"Polymorphism controls the degree of charge transfer in a molecularly doped semiconducting polymer". United States. https://doi.org/10.1039/c8mh00223a. https://www.osti.gov/servlets/purl/1540056.
@article{osti_1540056,
title = {Polymorphism controls the degree of charge transfer in a molecularly doped semiconducting polymer},
author = {Jacobs, Ian E. and Cendra, Camila and Harrelson, Thomas F. and Bedolla Valdez, Zaira I. and Faller, Roland and Salleo, Alberto and Moulé, Adam J.},
abstractNote = {When an organic semiconductor (OSC) is blended with an electron acceptor molecule that can act as a p-type dopant, there should ideally be complete (integer) transfer of charge from the OSC to the dopant. However, some dopant–OSC blends instead form charge transfer complexes (CTCs), characterized by fractional charge transfer (CT) and strong orbital hybridization between the two molecules. Fractional CT doping does not efficiently generate free charge carriers, but it is unclear what conditions lead to incomplete charge transfer. Here we show that by modifying film processing conditions in the semiconductor–dopant couple poly(3-hexylthiophene):2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (P3HT:F4TCNQ), we can selectively obtain nearly pure integer or fractional CT phases. Fractional CT films show electrical conductivities approximately 2 orders of magnitude lower than corresponding integer CT films, and remarkably different optical absorption spectra. Grazing incidence wide-angle X-ray diffraction (GIXD) reveals that fractional CT films display an unusually dense and well-ordered crystal structure. These films show lower paracrystallinity and shorter lamellar and π-stacking distances than undoped films processed under similar conditions. Using plane-wave DFT we obtain a structure with unit cell parameters closely matching those observed by GIXD. This first-ever observation of both fractional and integer CT in a single OSC–dopant system demonstrates the importance of structural effects on OSC doping and opens the door to further studies.},
doi = {10.1039/c8mh00223a},
journal = {Materials Horizons},
number = 4,
volume = 5,
place = {United States},
year = {Mon Mar 26 00:00:00 EDT 2018},
month = {Mon Mar 26 00:00:00 EDT 2018}
}
Web of Science
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