Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber
Abstract
The kesterite material Cu2ZnSn(S,Se)4 (CZTSSe) is an attractive earth–abundant semiconductor for photovoltaics. However, the power conversion efficiency is limited by a large density of I–II antisite defects, which cause severe band tailing and open–circuit voltage loss. Ag2ZnSnSe4 (AZTSe) is a promising alternative to CZTSSe with a substantially lower I–II antisite defect density and smaller band tailing. AZTSe is weakly n–type, and this study reports for the first time on how the carrier density is impacted by stoichiometry. Here, this study presents the first–ever photovoltaic device based on AZTSe, which exhibits an efficiency of 5.2%, which is the highest value reported for an n–type thin–film absorber. Due to the weakly n–type nature of the absorber, a new architecture is employed (SnO:F/AZTSe/MoO3/ITO) to replace conventional contacts and buffer materials. Using this platform, it is shown that the band tailing parameter in AZTSe more closely resembles that of CIGSe than CZTSSe, underscoring the strong promise of this absorber. In demonstrating the ability to collect photogenerated carriers from AZTSe, this study paves the way for novel thin–film heterojunction architectures where light absorption in the n–type device layer can supplement absorption in the p–type layer as opposed to producing a net optical loss.
- Authors:
-
- IBM T J Watson Research Center, Yorktown Heights, NY (United States)
- University of California, San Diego, CA (United States)
- Publication Date:
- Research Org.:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1533062
- Alternate Identifier(s):
- OSTI ID: 1401226
- Grant/Contract Number:
- EE0006334
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 22; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Chemistry; Energy & Fuels; Materials Science; Physics; AZTSe; Band tailing; CZTSSe; Kesterite; N‐type
Citation Formats
Gershon, Talia, Sardashti, Kasra, Gunawan, Oki, Mankad, Ravin, Singh, Saurabh, Lee, Yun Seog, Ott, John A., Kummel, Andrew, and Haight, Richard. Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber. United States: N. p., 2016.
Web. doi:10.1002/aenm.201601182.
Gershon, Talia, Sardashti, Kasra, Gunawan, Oki, Mankad, Ravin, Singh, Saurabh, Lee, Yun Seog, Ott, John A., Kummel, Andrew, & Haight, Richard. Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber. United States. https://doi.org/10.1002/aenm.201601182
Gershon, Talia, Sardashti, Kasra, Gunawan, Oki, Mankad, Ravin, Singh, Saurabh, Lee, Yun Seog, Ott, John A., Kummel, Andrew, and Haight, Richard. Mon .
"Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber". United States. https://doi.org/10.1002/aenm.201601182. https://www.osti.gov/servlets/purl/1533062.
@article{osti_1533062,
title = {Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber},
author = {Gershon, Talia and Sardashti, Kasra and Gunawan, Oki and Mankad, Ravin and Singh, Saurabh and Lee, Yun Seog and Ott, John A. and Kummel, Andrew and Haight, Richard},
abstractNote = {The kesterite material Cu2ZnSn(S,Se)4 (CZTSSe) is an attractive earth–abundant semiconductor for photovoltaics. However, the power conversion efficiency is limited by a large density of I–II antisite defects, which cause severe band tailing and open–circuit voltage loss. Ag2ZnSnSe4 (AZTSe) is a promising alternative to CZTSSe with a substantially lower I–II antisite defect density and smaller band tailing. AZTSe is weakly n–type, and this study reports for the first time on how the carrier density is impacted by stoichiometry. Here, this study presents the first–ever photovoltaic device based on AZTSe, which exhibits an efficiency of 5.2%, which is the highest value reported for an n–type thin–film absorber. Due to the weakly n–type nature of the absorber, a new architecture is employed (SnO:F/AZTSe/MoO3/ITO) to replace conventional contacts and buffer materials. Using this platform, it is shown that the band tailing parameter in AZTSe more closely resembles that of CIGSe than CZTSSe, underscoring the strong promise of this absorber. In demonstrating the ability to collect photogenerated carriers from AZTSe, this study paves the way for novel thin–film heterojunction architectures where light absorption in the n–type device layer can supplement absorption in the p–type layer as opposed to producing a net optical loss.},
doi = {10.1002/aenm.201601182},
journal = {Advanced Energy Materials},
number = 22,
volume = 6,
place = {United States},
year = {Mon Aug 22 00:00:00 EDT 2016},
month = {Mon Aug 22 00:00:00 EDT 2016}
}
Web of Science
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