High‐Throughput Growth of Microscale Gold Bicrystals for Single‐Grain‐Boundary Studies
[1];
[1]
- Department of Electrical Engineering Stanford University Stanford CA 94305 USA
- Department of Electrical Engineering Stanford University Stanford CA 94305 USA, University of Michigan–Shanghai Jiao Tong University Joint Institute Shanghai Jiao Tong University Shanghai 200240 China
- Department of Mechanical Engineering Stanford University Stanford CA 94305 USA
- Department of Materials Science and Engineering Stanford University Stanford CA 94305 USA
Abstract The study of grain boundaries is the foundation to understanding many of the intrinsic physical properties of bulk metals. Here, the preparation of microscale thin‐film gold bicrystals, using rapid melt growth, is presented as a model system for studies of single grain boundaries. This material platform utilizes standard fabrication tools and supports the high‐yield growth of thousands of bicrystals per wafer, each containing a grain boundary with a unique <111> tilt character. The crystal growth dynamics of the gold grains in each bicrystal are mediated by platinum gradients, which originate from the gold–platinum seeds responsible for gold crystal nucleation. This crystallization mechanism leads to a decoupling between crystal nucleation and crystal growth, and it ensures that the grain boundaries form at the middle of the gold microstructures and possess a uniform distribution of misorientation angles. It is envisioned that these bicrystals will enable the systematic study of the electrical, optical, chemical, thermal, and mechanical properties of individual grain boundary types.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1526324
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials Journal Issue: 32 Vol. 31; ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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