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Title: Fast Hybrid Silicon Double-Quantum-Dot Qubit

Abstract

We introduce a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers S2 = 3/4 (S = 1/2) and Sz = - 1/2, with the two different states being singlet and triplet in the doubly occupied dot. Gate operations can be implemented electrically and the qubit is highly tunable, enabling fast implementation of one- and two-qubit gates in a simpler geometry and with fewer operations than in other proposed quantum dot qubit architectures with fast operations. Additionally, the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1]
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  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Univ. at Buffalo, NY (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1512887
Report Number(s):
SAND2015-6068J
Journal ID: ISSN 0031-9007; PRLTAO; 667154
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 14; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Shi, Zhan, Simmons, C. B., Prance, J. R., Gamble, John King, Koh, Teck Seng, Shim, Yun-Pil, Hu, Xuedong, Savage, D. E., Lagally, M. G., Eriksson, M. A., Friesen, Mark, and Coppersmith, S. N. Fast Hybrid Silicon Double-Quantum-Dot Qubit. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.108.140503.
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Shi, Zhan, Simmons, C. B., Prance, J. R., Gamble, John King, Koh, Teck Seng, Shim, Yun-Pil, Hu, Xuedong, Savage, D. E., Lagally, M. G., Eriksson, M. A., Friesen, Mark, & Coppersmith, S. N. Fast Hybrid Silicon Double-Quantum-Dot Qubit. United States. https://doi.org/10.1103/PhysRevLett.108.140503
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Shi, Zhan, Simmons, C. B., Prance, J. R., Gamble, John King, Koh, Teck Seng, Shim, Yun-Pil, Hu, Xuedong, Savage, D. E., Lagally, M. G., Eriksson, M. A., Friesen, Mark, and Coppersmith, S. N. Sun . "Fast Hybrid Silicon Double-Quantum-Dot Qubit". United States. https://doi.org/10.1103/PhysRevLett.108.140503. https://www.osti.gov/servlets/purl/1512887.
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@article{osti_1512887,
title = {Fast Hybrid Silicon Double-Quantum-Dot Qubit},
author = {Shi, Zhan and Simmons, C. B. and Prance, J. R. and Gamble, John King and Koh, Teck Seng and Shim, Yun-Pil and Hu, Xuedong and Savage, D. E. and Lagally, M. G. and Eriksson, M. A. and Friesen, Mark and Coppersmith, S. N.},
abstractNote = {We introduce a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers S2 = 3/4 (S = 1/2) and Sz = - 1/2, with the two different states being singlet and triplet in the doubly occupied dot. Gate operations can be implemented electrically and the qubit is highly tunable, enabling fast implementation of one- and two-qubit gates in a simpler geometry and with fewer operations than in other proposed quantum dot qubit architectures with fast operations. Additionally, the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.},
doi = {10.1103/PhysRevLett.108.140503},
journal = {Physical Review Letters},
number = 14,
volume = 108,
place = {United States},
year = {Sun Apr 01 00:00:00 EDT 2012},
month = {Sun Apr 01 00:00:00 EDT 2012}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.108.140503
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Cited by: 169 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Schematic drawing of a hybrid qubit consisting of three electrons in two dots. The logical qubit states |0more » $\rangle$L and |1$\rangle$L both have $S$ = 1/2, $S$$z$ = -1/2; they are |0$\rangle$L = |S$\rangle$|$\downarrow$$\rangle$ and |1$\rangle$L = $\sqrt{\frac{1}{3}| T_{0}\rangle|\downarrow\rangle}$ - $\sqrt{\frac{2}{3}| T_{-}\rangle|\uparrow\rangle}$, where |$S\rangle$, |$T_{-}\rangle$, and |$T_{0}\rangle$ are two-particle singlet ($S$) and triplet ($T$) states in the left dot, and |$\uparrow\rangle$ and |$\downarrow\rangle$ respectively denote a spin-up and spin-down electron in the right dot. Gate operations are all performed electrically; gate voltages are used to change the energy splittings between the singlet and triplet states in the left dot and to change the tunnel couplings $t$$S$ and $t$$T$ between the two dots. (b) and (c): Schematic illustrating that the coupling between the electron in the singly occupied dot and the singlet and triplet states in the doubly occupied dot can be tuned independently via the barrier height and relative energies in the two dots, as described in the text. (d): Effective connectivity of two hybrid qubits composed of four dots in a linear geometry. Each connection is a tunable two-electron interaction. There are eight effective connections, compared to five effective connections in a linear array of six dots for the qubits considered in Ref. [12], shown in (e). For (d), a two-qubit gate equivalent to CNOT up to local (one-qubit) unitary operations can be implemented in 16 steps, compared to 18 for (e) (see Supplemental Information). (f): Connectivity for which a fourteen-operation two-qubit gate equivalent to CNOT up to local unitary operations has been found (see Supplemental Information).« less
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      FIG. S2 (p. 5)figure
      FIG. S3 (p. 8)figure
      FIG. S4 (p. 10)figure
      FIG. S5 (p. 10)figure
      FIG S6 (p. 11)figure
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