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Title: Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction

Abstract

There is rapidly expanding interest in exploiting the spin of valence-band holes rather than conduction-band electrons for spin qubit semiconductor circuits composed of coupled quantum dots. The hole platform offers stronger spin–orbit interaction (SOI), large difference between in-dot-plane and out-of-dot-plane g-factors, i.e. g-factor anisotropy, and a significantly reduced hyperfine coupling to nuclei in the host material. These attributes collectively can deliver fast all-electric coherent spin manipulation, efficient spin-flip inter-dot tunneling channels, a voltage tunable effective g-factor, a g-factor adjustable to nearly zero in an appropriately oriented external magnetic field, and long spin relaxation and coherence times. In this work, we review our recent work on the physics of heavy holes confined in a planar GaAs/AlGaAs double quantum dot system with strong SOI. For a single-hole, we have performed resonant tunneling magneto-spectroscopy to extract spin-flip and spin-conserving tunneling strengths, implemented spin-flip Landau–Zener–Stückelberg–Majorana (LZSM) interferometry, determined the spin relaxation time T1 as a function of magnetic field using a fast single-shot latched charge technique, electrically tuned the effective g-factor revealed by electric dipole spin resonance, and found signatures of the hyperfine interaction and dynamic nuclear polarization with holes. For two-holes, we have measured the energy spectrum in the presence of strong SOImore » (and so not limited by Pauli spin blockade), quantified the heavy-hole (HH) g-factor anisotropy on tilting the magnetic field, described a scheme to employ HHs whose g-factor is tunable to nearly zero for an in-plane magnetic field for a coherent photon-to-spin interface, and observed a well-defined LZSM interference pattern at small magnetic fields on pulsing through the singlet-triplet anti-crossing.« less

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [3]
+ Show Author Affiliations
  1. National Research Council of Canada, Ottawa, ON (Canada)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1778030
Report Number(s):
SAND-2021-3648J
Journal ID: ISSN 0268-1242; 695066; TRN: US2209526
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Volume: 36; Journal Issue: 5; Journal ID: ISSN 0268-1242
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Studenikin, Sergei, Korkusinski, Marek, Bogan, Alex, Gaudreau, Louis, Austing, D. Guy, Sachrajda, Andrew S., Tracy, Lisa, Reno, John, and Hargett, Terry. Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction. United States: N. p., 2021. Web. doi:10.1088/1361-6641/abe42d.
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Studenikin, Sergei, Korkusinski, Marek, Bogan, Alex, Gaudreau, Louis, Austing, D. Guy, Sachrajda, Andrew S., Tracy, Lisa, Reno, John, & Hargett, Terry. Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction. United States. https://doi.org/10.1088/1361-6641/abe42d
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Studenikin, Sergei, Korkusinski, Marek, Bogan, Alex, Gaudreau, Louis, Austing, D. Guy, Sachrajda, Andrew S., Tracy, Lisa, Reno, John, and Hargett, Terry. Tue . "Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction". United States. https://doi.org/10.1088/1361-6641/abe42d. https://www.osti.gov/servlets/purl/1778030.
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@article{osti_1778030,
title = {Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction},
author = {Studenikin, Sergei and Korkusinski, Marek and Bogan, Alex and Gaudreau, Louis and Austing, D. Guy and Sachrajda, Andrew S. and Tracy, Lisa and Reno, John and Hargett, Terry},
abstractNote = {There is rapidly expanding interest in exploiting the spin of valence-band holes rather than conduction-band electrons for spin qubit semiconductor circuits composed of coupled quantum dots. The hole platform offers stronger spin–orbit interaction (SOI), large difference between in-dot-plane and out-of-dot-plane g-factors, i.e. g-factor anisotropy, and a significantly reduced hyperfine coupling to nuclei in the host material. These attributes collectively can deliver fast all-electric coherent spin manipulation, efficient spin-flip inter-dot tunneling channels, a voltage tunable effective g-factor, a g-factor adjustable to nearly zero in an appropriately oriented external magnetic field, and long spin relaxation and coherence times. In this work, we review our recent work on the physics of heavy holes confined in a planar GaAs/AlGaAs double quantum dot system with strong SOI. For a single-hole, we have performed resonant tunneling magneto-spectroscopy to extract spin-flip and spin-conserving tunneling strengths, implemented spin-flip Landau–Zener–Stückelberg–Majorana (LZSM) interferometry, determined the spin relaxation time T1 as a function of magnetic field using a fast single-shot latched charge technique, electrically tuned the effective g-factor revealed by electric dipole spin resonance, and found signatures of the hyperfine interaction and dynamic nuclear polarization with holes. For two-holes, we have measured the energy spectrum in the presence of strong SOI (and so not limited by Pauli spin blockade), quantified the heavy-hole (HH) g-factor anisotropy on tilting the magnetic field, described a scheme to employ HHs whose g-factor is tunable to nearly zero for an in-plane magnetic field for a coherent photon-to-spin interface, and observed a well-defined LZSM interference pattern at small magnetic fields on pulsing through the singlet-triplet anti-crossing.},
doi = {10.1088/1361-6641/abe42d},
journal = {Semiconductor Science and Technology},
number = 5,
volume = 36,
place = {United States},
year = {Tue Apr 06 00:00:00 EDT 2021},
month = {Tue Apr 06 00:00:00 EDT 2021}
}
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New directions in the pursuit of Majorana fermions in solid state systems
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Single hole spin relaxation probed by fast single-shot latched charge sensing
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Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
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Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation
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Fast two-qubit logic with holes in germanium
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Zero Field Splitting of Heavy-Hole States in Quantum Dots
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Hole–spin dephasing time associated with hyperfine interaction in quantum dots
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Gate Tunable Hole Charge Qubit Formed in a Ge/Si Nanowire Double Quantum Dot Coupled to Microwave Photons
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Observation of Spin-Selective Tunneling in SiGe Nanocrystals
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Electrically tunable hole g factor of an optically active quantum dot for fast spin rotations
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Hyperfine-Mediated Gate-Driven Electron Spin Resonance
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Hole Spin Resonance and Spin-Orbit Coupling in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor
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Characterization of Qubit Dephasing by Landau-Zener-Stückelberg-Majorana Interferometry
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Observation of the Kondo Effect in a Spin- 3 2 Hole Quantum Dot
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Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot
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Charge sensing and spin-related transport property of p-channel silicon quantum dots
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A single-hole spin qubit
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Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors
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Field Tuning the g Factor in InAs Nanowire Double Quantum Dots
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Spin Relaxation Benchmarks and Individual Qubit Addressability for Holes in Quantum Dots
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Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry
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A Coherent Beam Splitter for Electronic Spin States
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Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
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Hole–Nuclear Spin Interaction in Quantum Dots
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Probing the Spin States of a Single Acceptor Atom
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Notch filtering the nuclear environment of a spin qubit
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Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
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Photon-to-electron quantum information transfer
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Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor
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Spin–orbit-induced hole spin relaxation in InAs and GaAs quantum dots
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Spin–Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole Gas
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A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor
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Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure
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Disentangling the effects of spin-orbit and hyperfine interactions on spin blockade
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Double-layer-gate architecture for few-hole GaAs quantum dots
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Prospects for Spin-Based Quantum Computing in Quantum Dots
journal, April 2013

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