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Title: Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr 2 IrO 4

Abstract

Electrical control of structural and physical properties is a long-sought, but elusive goal of contemporary science and technology. We propose that a combination of strong spin-orbit interactions (SOI) and a canted antiferromagnetic Mott state is sufficient to attain that goal. The antiferromagnetic insulator Sr2IrO4 provides a model system in which strong SOI lock canted Ir magnetic moments to IrO6 octahedra, causing them to rigidly rotate together. A novel coupling between an applied electrical current and the canting angle reduces the N´eel temperature and drives a large, nonlinear lattice expansion that closely tracks the magnetization, increases the electron mobility, and precipitates a unique resistive switching effect. Our studies open new avenues for understanding fundamental physics driven by strong SOI in condensed matter, and provide a new paradigm for functional materials and devices.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3]
  1. Univ. of Colorado, Boulder, CO (United States)
  2. Univ. of Kentucky, Lexington, KY (United States)
  3. Temple Univ., Philadelphia, PA (United States)
Publication Date:
Research Org.:
Temple Univ., Philadelphia, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
OSTI Identifier:
1511840
Alternate Identifier(s):
OSTI ID: 1415672
Grant/Contract Number:  
FG02-01ER45872; DMR-1712101; DMR-1506979
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 120; Journal Issue: 1; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Cao, Gang, Terzic, J., Zhao, H. D., Zheng, H., De Long, L. E., and Riseborough, Peter S. Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr2IrO4. United States: N. p., 2018. Web. doi:10.1103/physrevlett.120.017201.
Cao, Gang, Terzic, J., Zhao, H. D., Zheng, H., De Long, L. E., & Riseborough, Peter S. Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr2IrO4. United States. https://doi.org/10.1103/physrevlett.120.017201
Cao, Gang, Terzic, J., Zhao, H. D., Zheng, H., De Long, L. E., and Riseborough, Peter S. Thu . "Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr2IrO4". United States. https://doi.org/10.1103/physrevlett.120.017201. https://www.osti.gov/servlets/purl/1511840.
@article{osti_1511840,
title = {Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr2IrO4},
author = {Cao, Gang and Terzic, J. and Zhao, H. D. and Zheng, H. and De Long, L. E. and Riseborough, Peter S.},
abstractNote = {Electrical control of structural and physical properties is a long-sought, but elusive goal of contemporary science and technology. We propose that a combination of strong spin-orbit interactions (SOI) and a canted antiferromagnetic Mott state is sufficient to attain that goal. The antiferromagnetic insulator Sr2IrO4 provides a model system in which strong SOI lock canted Ir magnetic moments to IrO6 octahedra, causing them to rigidly rotate together. A novel coupling between an applied electrical current and the canting angle reduces the N´eel temperature and drives a large, nonlinear lattice expansion that closely tracks the magnetization, increases the electron mobility, and precipitates a unique resistive switching effect. Our studies open new avenues for understanding fundamental physics driven by strong SOI in condensed matter, and provide a new paradigm for functional materials and devices.},
doi = {10.1103/physrevlett.120.017201},
journal = {Physical Review Letters},
number = 1,
volume = 120,
place = {United States},
year = {Thu Jan 04 00:00:00 EST 2018},
month = {Thu Jan 04 00:00:00 EST 2018}
}

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Free Publicly Available Full Text
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Cited by: 30 works
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Figures / Tables:

Fig. 1 Fig. 1: Single-crystal x-ray diffraction of Sr2IrO4 with current I applied within the basal plane. (a) Representative x-ray diffraction pattern of a single crystal. The circled Bragg peak is (0,0,16). Inset: Sample mounting showing electrical leads and cryogenic gas feed (11). Current-controlled changes in (b) the location and (c) themore » intensity (counts) of the (0016) peak for I = 0 and I = 105 mA« less

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Works referencing / citing this record:

The J eff = 1/2 Antiferromagnet Sr 2 IrO 4 : A Golden Avenue toward New Physics and Functions
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Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor
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Lattice frustration in spin-orbit Mott insulator Sr3Ir2O7 at high pressure
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Spin–lattice and electron–phonon coupling in 3d/5d hybrid Sr3NiIrO6
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Resistive switching in tunnel junctions with a single-crystal La 2 NiO 4 electrode
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Strong spin-orbit coupling in the noncentrosymmetric Kondo lattice
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Enhanced insulating behavior in the Ir-vacant Sr 2 Ir 1– x O 4 system dominated by the local structure distortion
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Spin-lattice and electron-phonon coupling in 3$d$/5$d$ hybrid Sr$_3$NiIrO$_6$
text, January 2019


Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.