Hole-induced electronic and optical transitions in epitaxial thin films
Abstract
We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for 0 ≤ x ≤ 1 prepared by molecular-beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence-band maximum. Combining valence-band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level as a result of hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a conversion from semiconducting to metallic behavior at x = 1. As a result, low-energy optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.
- Authors:
-
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
- OSTI Identifier:
- 1510080
- Alternate Identifier(s):
- OSTI ID: 1493381
- Grant/Contract Number:
- AC02-06CH11357; AC02-05CH11231; PNNL LDRD 69319
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 2; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Epitaxial oxide films; Hole doping; Hybrid functional calculations; LaFeO3; Moleclar beam epitaxy; Optical absorption
Citation Formats
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., and Chambers, Scott A. Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films. United States: N. p., 2019.
Web. doi:10.1103/PhysRevMaterials.3.025401.
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., & Chambers, Scott A. Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films. United States. https://doi.org/10.1103/PhysRevMaterials.3.025401
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., and Chambers, Scott A. Mon .
"Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films". United States. https://doi.org/10.1103/PhysRevMaterials.3.025401. https://www.osti.gov/servlets/purl/1510080.
@article{osti_1510080,
title = {Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films},
author = {Wang, Le and Du, Yingge and Sushko, Peter V. and Bowden, Mark E. and Stoerzinger, Kelsey A. and Heald, Steven M. and Scafetta, Mark D. and Kaspar, Tiffany C. and Chambers, Scott A.},
abstractNote = {We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for 0 ≤ x ≤ 1 prepared by molecular-beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence-band maximum. Combining valence-band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level as a result of hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a conversion from semiconducting to metallic behavior at x = 1. As a result, low-energy optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.},
doi = {10.1103/PhysRevMaterials.3.025401},
journal = {Physical Review Materials},
number = 2,
volume = 3,
place = {United States},
year = {Mon Feb 04 00:00:00 EST 2019},
month = {Mon Feb 04 00:00:00 EST 2019}
}
Web of Science
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