Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films

Wang, Le; Du, Yingge; Sushko, Peter V.; Bowden, Mark E.; Stoerzinger, Kelsey A.; Heald, Steven M.; Scafetta, Mark D.; Kaspar, Tiffany C.; Chambers, Scott A.

doi:10.1103/PhysRevMaterials.3.025401

Title: Hole-induced electronic and optical transitions in $L a_{1 - x} S r_{x} Fe O_{3}$ epitaxial thin films

Journal Article · 03 February 2019 · Physical Review Materials

DOI: https://doi.org/10.1103/PhysRevMaterials.3.025401 · OSTI ID:1510080

Wang, Le ^[1]; Du, Yingge ^[1]; Sushko, Peter V. ^[1]; Bowden, Mark E. ^[1]; Stoerzinger, Kelsey A. ^[1]; Heald, Steven M. ^[2]; Scafetta, Mark D. ^[1]; Kaspar, Tiffany C. ^[1]; Chambers, Scott A. ^[1]

Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)

We have investigated the electronic and optical properties of epitaxial La_1-xSr_xFeO₃ for 0 ≤ x ≤ 1 prepared by molecular-beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence-band maximum. Combining valence-band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level as a result of hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a conversion from semiconducting to metallic behavior at x = 1. As a result, low-energy optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231; AC02-06CH11357

OSTI ID:: 1510080

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 2 Vol. 3; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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