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Title: Hole-induced electronic and optical transitions in L a 1 - x S r x Fe O 3 epitaxial thin films

Abstract

We have investigated the electronic and optical properties of epitaxial La 1-xSr xFeO 3 for 0 = x = 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward to the valence band maximum. Both Fe 2p and O 1s spectra broaden to higher binding energy with increasing x, consistent with delocalization of Sr-induced holes in the Fe 3d – O 2p hybridized valence band. Combining X-ray valence band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level, resulting from hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a insulator-to-metal transition at x = 1. Sub-gap optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1501850
Report Number(s):
PNNL-SA-139953
Journal ID: ISSN 2475-9953; PRMHAR
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 2; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
Holed doping, optical absorption, DFT calculation, epitaxial thin films, LaFeO3

Citation Formats

Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., and Chambers, Scott A. Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.025401.
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., & Chambers, Scott A. Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films. United States. https://doi.org/10.1103/PhysRevMaterials.3.025401
Wang, Le, Du, Yingge, Sushko, Peter V., Bowden, Mark E., Stoerzinger, Kelsey A., Heald, Steven M., Scafetta, Mark D., Kaspar, Tiffany C., and Chambers, Scott A. Fri . "Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films". United States. https://doi.org/10.1103/PhysRevMaterials.3.025401.
@article{osti_1501850,
title = {Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films},
author = {Wang, Le and Du, Yingge and Sushko, Peter V. and Bowden, Mark E. and Stoerzinger, Kelsey A. and Heald, Steven M. and Scafetta, Mark D. and Kaspar, Tiffany C. and Chambers, Scott A.},
abstractNote = {We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for 0 = x = 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward to the valence band maximum. Both Fe 2p and O 1s spectra broaden to higher binding energy with increasing x, consistent with delocalization of Sr-induced holes in the Fe 3d – O 2p hybridized valence band. Combining X-ray valence band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level, resulting from hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a insulator-to-metal transition at x = 1. Sub-gap optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.},
doi = {10.1103/PhysRevMaterials.3.025401},
url = {https://www.osti.gov/biblio/1501850}, journal = {Physical Review Materials},
issn = {2475-9953},
number = 2,
volume = 3,
place = {United States},
year = {2019},
month = {2}
}

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    Works referencing / citing this record:

    Brownmillerite phase formation and evolution in epitaxial strontium ferrite heterostructures
    journal, June 2019


    Confined polaronic transport in (LaFeO 3 ) n /(SrFeO 3 ) 1 superlattices
    journal, July 2019