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Title: Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique

Abstract

Precise control of oxidation level on graphene oxide (GO) sheets is still a big challenge. This work demonstrates a linear control of surface oxidation level on GO sheets via atomic layer reduction (ALR) technique at 100 and 150°C. The oxygen stripping rate during the ALR cycling was assessed at different operating temperatures; 0.055 %/cycle (150°C) and 0.028 %/cycle (100°C). It was shown that the optical band gap as well as the electrical conductivity can be linearly tuned with ALR cycle number for the graphene-like materials. This unique capability was not feasible via utilizing conventional synthesis routes (e.g. thermal or chemical reduction) since these techniques only provide a stepwise control over the oxidation/reduction processes. The in-situ oxidation level on GO materials can be accurately controlled through the ALR/atomic layer oxidation (ALO) cycle. Accordingly, the ALR/ALO cycle offers excellent reversibility for adjusting the chemical composition of graphene-like materials, and tuning the optical and electronic properties of such nanomaterials.

Authors:
 [1]; ORCiD logo [1];  [1]; ORCiD logo [2]; ORCiD logo [3]
  1. Yuan Ze Univ., Taoyuan (Taiwan)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Univ. of Tennessee, Knoxville, TN (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1509525
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 11; Journal Issue: 16; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Mallick, Bikash Chandra, Hsieh, Chien-Te, Yin, Ken-Ming, Li, Jianlin, and Ashraf Gandomi, Yasser. Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique. United States: N. p., 2019. Web. doi:10.1039/c8nr10118c.
Mallick, Bikash Chandra, Hsieh, Chien-Te, Yin, Ken-Ming, Li, Jianlin, & Ashraf Gandomi, Yasser. Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique. United States. doi:10.1039/c8nr10118c.
Mallick, Bikash Chandra, Hsieh, Chien-Te, Yin, Ken-Ming, Li, Jianlin, and Ashraf Gandomi, Yasser. Thu . "Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique". United States. doi:10.1039/c8nr10118c. https://www.osti.gov/servlets/purl/1509525.
@article{osti_1509525,
title = {Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique},
author = {Mallick, Bikash Chandra and Hsieh, Chien-Te and Yin, Ken-Ming and Li, Jianlin and Ashraf Gandomi, Yasser},
abstractNote = {Precise control of oxidation level on graphene oxide (GO) sheets is still a big challenge. This work demonstrates a linear control of surface oxidation level on GO sheets via atomic layer reduction (ALR) technique at 100 and 150°C. The oxygen stripping rate during the ALR cycling was assessed at different operating temperatures; 0.055 %/cycle (150°C) and 0.028 %/cycle (100°C). It was shown that the optical band gap as well as the electrical conductivity can be linearly tuned with ALR cycle number for the graphene-like materials. This unique capability was not feasible via utilizing conventional synthesis routes (e.g. thermal or chemical reduction) since these techniques only provide a stepwise control over the oxidation/reduction processes. The in-situ oxidation level on GO materials can be accurately controlled through the ALR/atomic layer oxidation (ALO) cycle. Accordingly, the ALR/ALO cycle offers excellent reversibility for adjusting the chemical composition of graphene-like materials, and tuning the optical and electronic properties of such nanomaterials.},
doi = {10.1039/c8nr10118c},
journal = {Nanoscale},
number = 16,
volume = 11,
place = {United States},
year = {2019},
month = {3}
}

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