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Title: Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by cyclic atomic layer reduction technique

Abstract

The present work develops an atomic layer reduction (ALR) method to accurately tune oxidation level, electrical conductance, band-gap structure, and photoluminescence (PL) response of graphene oxide (GO) sheets. The ALR route is carried out at 200 °C within ALR cycle number of 10–100. The ALR treatment is capable of striping surface functionalities (e.g., hydroxyl, carbonyl, and carboxylic groups), producing thermally-reduced GO sheets. The ALR cycle number serves as a controlling factor in adjusting the crystalline, surface chemistry, electrical, optical properties of GO sheets. With increasing the ALR cycle number, ALR-GO sheets display a high crystallinity, a low oxidation level, an improved electrical conductivity, a narrow band gap, and a tunable PL response. Finally, on the basis of the results, the ALR technique offers a great potential for accurately tune electrical and optical properties of carbon materials through the cyclic removal of oxygen functionalities, without any complicated thermal and chemical desorption processes.

Authors:
 [1];  [2];  [3];  [4]; ORCiD logo [5]; ORCiD logo [6]
  1. Xiamen Univ. of Technology, Xiamen, Fujian (China). Fujian Provincial Key Lab. of Functional Materials and Applications, Inst. of Material Preparation and Applied Technology, School of Materials Science and Engineering
  2. Yuan Ze Univ. Taoyuan (Taiwan). Dept. of Chemical Engineering and Materials Science; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Mechanical, Aerospace, and Biomedical Engineering
  3. Yuan Ze Univ. Taoyuan (Taiwan). Dept. of Chemical Engineering and Materials Science
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Nuclear Science and Engineering and Dept. of Materials Science and Engineering; National Central Univ., Taoyuan (Taiwan). Inst. of Materials Science and Engineering
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Energy and Transportation Science Division
  6. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Mechanical, Aerospace, and Biomedical Engineering
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1439927
Grant/Contract Number:  
AC05-00OR22725; MOST 105-2628-E-155-002-MY3; MOST 105-2221-E-155-014-MY3
Resource Type:
Accepted Manuscript
Journal Name:
Carbon
Additional Journal Information:
Journal Volume: 137; Journal Issue: C; Journal ID: ISSN 0008-6223
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gu, Si-Yong, Hsieh, Chien-Te, Lin, Tzu-Wei, Chang, Jeng-Kuei, Li, Jianlin, and Gandomi, Yasser Ashraf. Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by cyclic atomic layer reduction technique. United States: N. p., 2018. Web. https://doi.org/10.1016/j.carbon.2018.05.024.
Gu, Si-Yong, Hsieh, Chien-Te, Lin, Tzu-Wei, Chang, Jeng-Kuei, Li, Jianlin, & Gandomi, Yasser Ashraf. Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by cyclic atomic layer reduction technique. United States. https://doi.org/10.1016/j.carbon.2018.05.024
Gu, Si-Yong, Hsieh, Chien-Te, Lin, Tzu-Wei, Chang, Jeng-Kuei, Li, Jianlin, and Gandomi, Yasser Ashraf. Sat . "Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by cyclic atomic layer reduction technique". United States. https://doi.org/10.1016/j.carbon.2018.05.024. https://www.osti.gov/servlets/purl/1439927.
@article{osti_1439927,
title = {Tuning oxidation level, electrical conductance and band gap structure on graphene sheets by cyclic atomic layer reduction technique},
author = {Gu, Si-Yong and Hsieh, Chien-Te and Lin, Tzu-Wei and Chang, Jeng-Kuei and Li, Jianlin and Gandomi, Yasser Ashraf},
abstractNote = {The present work develops an atomic layer reduction (ALR) method to accurately tune oxidation level, electrical conductance, band-gap structure, and photoluminescence (PL) response of graphene oxide (GO) sheets. The ALR route is carried out at 200 °C within ALR cycle number of 10–100. The ALR treatment is capable of striping surface functionalities (e.g., hydroxyl, carbonyl, and carboxylic groups), producing thermally-reduced GO sheets. The ALR cycle number serves as a controlling factor in adjusting the crystalline, surface chemistry, electrical, optical properties of GO sheets. With increasing the ALR cycle number, ALR-GO sheets display a high crystallinity, a low oxidation level, an improved electrical conductivity, a narrow band gap, and a tunable PL response. Finally, on the basis of the results, the ALR technique offers a great potential for accurately tune electrical and optical properties of carbon materials through the cyclic removal of oxygen functionalities, without any complicated thermal and chemical desorption processes.},
doi = {10.1016/j.carbon.2018.05.024},
journal = {Carbon},
number = C,
volume = 137,
place = {United States},
year = {2018},
month = {5}
}

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Figures / Tables:

Fig. 1 Fig. 1: Flowchart (upper) and mechanism (lower) for describing one ALR cycle, including (i) H2-containing pulse (10 s), (ii) N2 purge (10 s), and (iii) pumping (10 s). (A colour version of this figure can be viewed online.)

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Works referencing / citing this record:

Linear control of the oxidation level on graphene oxide sheets using the cyclic atomic layer reduction technique
journal, January 2019

  • Mallick, Bikash Chandra; Hsieh, Chien-Te; Yin, Ken-Ming
  • Nanoscale, Vol. 11, Issue 16
  • DOI: 10.1039/c8nr10118c

Graphene materials as a superior platform for advanced sensing strategies against gaseous ammonia
journal, January 2018

  • Vikrant, Kumar; Kumar, Vanish; Kim, Ki-Hyun
  • Journal of Materials Chemistry A, Vol. 6, Issue 45
  • DOI: 10.1039/c8ta07669c

Amino-functionalization on graphene oxide sheets using an atomic layer amidation technique
journal, January 2020

  • Gu, Siyong; Hsieh, Chien-Te; Mallick, Bikash Chandra
  • Journal of Materials Chemistry C, Vol. 8, Issue 2
  • DOI: 10.1039/c9tc05748j

    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.