Tunneling in graphene–topological insulator hybrid devices
Abstract
Hybrid graphene–topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi2Se3 exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi2Se3 density of states. Similar results were obtained for BLG on top of Bi2Se3, with tenfold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi2Se3 and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI Γ and graphene K, K' points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge neutrality point is traced along the energy-density trajectory. Lastly, this trajectory is used as a measure of the ground-state density of states.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics; Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
- National Inst. of Material Science, Tsukuba (Japan). Advanced Materials Lab.
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1505756
- Alternate Identifier(s):
- OSTI ID: 1234007
- Grant/Contract Number:
- SC0006418; DMR-0819762; ECS-0335765; PCIG12-GA-2012-333620
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 92; Journal Issue: 24; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Steinberg, H., Orona, L. A., Fatemi, V., Sanchez-Yamagishi, J. D., Watanabe, K., Taniguchi, T., and Jarillo-Herrero, P. Tunneling in graphene–topological insulator hybrid devices. United States: N. p., 2015.
Web. doi:10.1103/physrevb.92.241409.
Steinberg, H., Orona, L. A., Fatemi, V., Sanchez-Yamagishi, J. D., Watanabe, K., Taniguchi, T., & Jarillo-Herrero, P. Tunneling in graphene–topological insulator hybrid devices. United States. https://doi.org/10.1103/physrevb.92.241409
Steinberg, H., Orona, L. A., Fatemi, V., Sanchez-Yamagishi, J. D., Watanabe, K., Taniguchi, T., and Jarillo-Herrero, P. Mon .
"Tunneling in graphene–topological insulator hybrid devices". United States. https://doi.org/10.1103/physrevb.92.241409. https://www.osti.gov/servlets/purl/1505756.
@article{osti_1505756,
title = {Tunneling in graphene–topological insulator hybrid devices},
author = {Steinberg, H. and Orona, L. A. and Fatemi, V. and Sanchez-Yamagishi, J. D. and Watanabe, K. and Taniguchi, T. and Jarillo-Herrero, P.},
abstractNote = {Hybrid graphene–topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi2Se3 exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi2Se3 density of states. Similar results were obtained for BLG on top of Bi2Se3, with tenfold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi2Se3 and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI Γ and graphene K, K' points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge neutrality point is traced along the energy-density trajectory. Lastly, this trajectory is used as a measure of the ground-state density of states.},
doi = {10.1103/physrevb.92.241409},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 24,
volume = 92,
place = {United States},
year = {Mon Dec 28 00:00:00 EST 2015},
month = {Mon Dec 28 00:00:00 EST 2015}
}
Web of Science
Figures / Tables:
Works referenced in this record:
Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
journal, December 2012
- Georgiou, Thanasis; Jalil, Rashid; Belle, Branson D.
- Nature Nanotechnology, Vol. 8, Issue 2
Landau Quantization of Topological Surface States in
journal, August 2010
- Cheng, Peng; Song, Canli; Zhang, Tong
- Physical Review Letters, Vol. 105, Issue 7
Interaction of Phonons and Dirac Fermions on the Surface of : A Strong Kohn Anomaly
journal, October 2011
- Zhu, Xuetao; Santos, L.; Sankar, R.
- Physical Review Letters, Vol. 107, Issue 18
Van der Waals heterostructures
journal, July 2013
- Geim, A. K.; Grigorieva, I. V.
- Nature, Vol. 499, Issue 7459, p. 419-425
Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature
journal, November 2013
- Kou, Liangzhi; Yan, Binghai; Hu, Feiming
- Nano Letters, Vol. 13, Issue 12
Colloquium: Topological insulators
journal, November 2010
- Hasan, M. Z.; Kane, C. L.
- Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067
Momentum-resolved Landau-level spectroscopy of Dirac surface state in
journal, August 2010
- Hanaguri, T.; Igarashi, K.; Kawamura, M.
- Physical Review B, Vol. 82, Issue 8
Intrinsic Josephson effects in high- superconductors
journal, January 1994
- Kleiner, R.; Müller, P.
- Physical Review B, Vol. 49, Issue 2
Electronic transport in two-dimensional graphene
journal, May 2011
- Das Sarma, S.; Adam, Shaffique; Hwang, E. H.
- Reviews of Modern Physics, Vol. 83, Issue 2, p. 407-470
Proximity Effect in Graphene–Topological-Insulator Heterostructures
journal, March 2014
- Zhang, Junhua; Triola, C.; Rossi, E.
- Physical Review Letters, Vol. 112, Issue 9
Observation of Surface Bound State and Two-Dimensional Energy Band by Electron Tunneling
journal, February 1970
- Tsui, D. C.
- Physical Review Letters, Vol. 24, Issue 7
Surface and substrate induced effects on thin films of the topological insulators Bi Se and Bi Te
journal, May 2013
- Liu, Wenliang; Peng, Xiangyang; Wei, Xiaolin
- Physical Review B, Vol. 87, Issue 20
Tunneling Conductivity in -Ta
journal, July 1975
- Wattamaniuk, W. J.; Tidman, J. P.; Frindt, R. F.
- Physical Review Letters, Vol. 35, Issue 1
The phonon dispersion of graphite revisited
journal, July 2004
- Wirtz, Ludger; Rubio, Angel
- Solid State Communications, Vol. 131, Issue 3-4
Transport Measurements Across a Tunable Potential Barrier in Graphene
journal, June 2007
- Huard, B.; Sulpizio, J. A.; Stander, N.
- Physical Review Letters, Vol. 98, Issue 23
Tunneling spectroscopy of graphene-boron-nitride heterostructures
journal, February 2012
- Amet, F.; Williams, J. R.; Garcia, A. G. F.
- Physical Review B, Vol. 85, Issue 7
Breakdown of the Interlayer Coherence in Twisted Bilayer Graphene
journal, February 2013
- Kim, Youngwook; Yun, Hoyeol; Nam, Seung-Geol
- Physical Review Letters, Vol. 110, Issue 9
Resonant tunnelling and negative differential conductance in graphene transistors
journal, April 2013
- Britnell, L.; Gorbachev, R. V.; Geim, A. K.
- Nature Communications, Vol. 4, Issue 1
STM Imaging of Impurity Resonances on
journal, May 2012
- Alpichshev, Zhanybek; Biswas, Rudro R.; Balatsky, Alexander V.
- Physical Review Letters, Vol. 108, Issue 20
Observation of Landau levels of Dirac fermions in graphite
journal, July 2007
- Li, Guohong; Andrei, Eva Y.
- Nature Physics, Vol. 3, Issue 9
The electronic properties of graphene
journal, January 2009
- Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
- Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
Boron nitride substrates for high-quality graphene electronics
journal, August 2010
- Dean, C. R.; Young, A. F.; Meric, I.
- Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
Observation of Carrier-Density-Dependent Many-Body Effects in Graphene via Tunneling Spectroscopy
journal, January 2010
- Brar, Victor W.; Wickenburg, Sebastian; Panlasigui, Melissa
- Physical Review Letters, Vol. 104, Issue 3
Probing a two-dimensional Fermi surface by tunneling
journal, September 1991
- Eisenstein, J. P.; Gramila, T. J.; Pfeiffer, L. N.
- Physical Review B, Vol. 44, Issue 12
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3
journal, May 2011
- Kong, Desheng; Cha, Judy J.; Lai, Keji
- ACS Nano, Vol. 5, Issue 6
Electron-Phonon Coupling on the Surface of the Topological Insulator Determined from Surface-Phonon Dispersion Measurements
journal, May 2012
- Zhu, Xuetao; Santos, L.; Howard, C.
- Physical Review Letters, Vol. 108, Issue 18
Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
journal, October 2010
- Taychatanapat, Thiti; Jarillo-Herrero, Pablo
- Physical Review Letters, Vol. 105, Issue 16
Fingerprints of Inelastic Transport at the Surface of the Topological Insulator : Role of Electron-Phonon Coupling
journal, February 2014
- Costache, M. V.; Neumann, I.; Sierra, J. F.
- Physical Review Letters, Vol. 112, Issue 8
Asymmetry gap in the electronic band structure of bilayer graphene
journal, October 2006
- McCann, Edward
- Physical Review B, Vol. 74, Issue 16
Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene
journal, July 2008
- Zhang, Yuanbo; Brar, Victor W.; Wang, Feng
- Nature Physics, Vol. 4, Issue 8
Proximity-induced giant spin-orbit interaction in epitaxial graphene on a topological insulator
journal, February 2013
- Jin, Kyung-Hwan; Jhi, Seung-Hoon
- Physical Review B, Vol. 87, Issue 7
Works referencing / citing this record:
Van Der Waals Heterostructures with Spin‐Orbit Coupling
journal, December 2019
- Rossi, Enrico; Triola, Christopher
- Annalen der Physik, Vol. 532, Issue 2
Single and bilayer graphene on the topological insulator : Electronic and spin-orbit properties from first principles
journal, October 2019
- Zollner, Klaus; Fabian, Jaroslav
- Physical Review B, Vol. 100, Issue 16
Superconductivity in twisted graphene heterostructures
journal, June 2019
- Gani, Yohanes S.; Steinberg, Hadar; Rossi, Enrico
- Physical Review B, Vol. 99, Issue 23
Tailoring emergent spin phenomena in Dirac material heterostructures
journal, September 2018
- Khokhriakov, Dmitrii; Cummings, Aron W.; Song, Kenan
- Science Advances, Vol. 4, Issue 9
Single and bilayer graphene on the topological insulator Bi2Se3: Electronic and spin-orbit properties from first principles
text, January 2019
- Zollner, Klaus; Fabian, Jaroslav
- Universität Regensburg
Van der Waals heterostructures with spin-orbit coupling
text, January 2019
- Rossi, Enrico; Triola, Christopher
- arXiv