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Title: Tunneling in graphene–topological insulator hybrid devices

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
 [1];  [2];  [2];  [2];  [3];  [3];  [2]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics; Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics; MIT
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
  3. National Inst. of Material Science, Tsukuba (Japan). Advanced Materials Lab.
+ Show Author Affiliations

Hybrid graphene–topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi2Se3 exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi2Se3 density of states. Similar results were obtained for BLG on top of Bi2Se3, with tenfold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi2Se3 and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI Γ and graphene K, K' points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge neutrality point is traced along the energy-density trajectory. Lastly, this trajectory is used as a measure of the ground-state density of states.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0006418
OSTI ID:
1505756
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 24 Vol. 92; ISSN 1098-0121; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (7)

Van Der Waals Heterostructures with Spin‐Orbit Coupling journal December 2019
Single and bilayer graphene on the topological insulator Bi 2 Se 3 : Electronic and spin-orbit properties from first principles journal October 2019
Giant Edelstein effect in topological-insulator–graphene heterostructures journal December 2017
Superconductivity in twisted graphene NbSe 2 heterostructures journal June 2019
Tailoring emergent spin phenomena in Dirac material heterostructures journal September 2018
Van der Waals heterostructures with spin-orbit coupling text January 2019
Single and bilayer graphene on the topological insulator Bi2Se3: Electronic and spin-orbit properties from first principles text January 2019

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