Magnetoresistance and quantum oscillations of an electrostatically tuned semimetal-to-metal transition in ultrathin
Abstract
In this work, we report on electronic transport measurements of electrostatically gated nanodevices of the semimetal WTe2. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere. At low temperatures, we find that a large magnetoresistance can be turned on and off by electrostatically doping the system between a semimetallic state and an electron-only metallic state, respectively. We confirm the nature of the two regimes by analyzing the magnetoresistance and Hall effect with a two-carrier model, as well as by analysis of Shubnikov-de Haas oscillations, both of which indicate depletion of hole carriers via the electrostatic gate. This confirms that semiclassical transport of two oppositely charged carriers accurately describes the exceptional magnetoresistance observed in this material. Finally, we also find that the magnetoresistance power law is subquadratic and density independent, suggesting new physics specifically in the semimetallic regime.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Princeton Univ., NJ (United States)
- National Institute for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Gordon and Betty Moore Foundation; USDOE
- OSTI Identifier:
- 1535836
- Alternate Identifier(s):
- OSTI ID: 1341916
- Grant/Contract Number:
- SC0001088; SC0006418; ECS-0335765; DMR-0819762; DMR-1005438; FA9550-16-1-0382; GBMF4541
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B
- Additional Journal Information:
- Journal Volume: 95; Journal Issue: 4; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Hall effect; magnetoresistance; semimetals; transition-metal dichalcogenide; ultrathin films; Shubnikov-de Haas effect
Citation Formats
Fatemi, Valla, Gibson, Quinn D., Watanabe, Kenji, Taniguchi, Takashi, Cava, Robert J., and Jarillo-Herrero, Pablo. Magnetoresistance and quantum oscillations of an electrostatically tuned semimetal-to-metal transition in ultrathin WTe2. United States: N. p., 2017.
Web. doi:10.1103/physrevb.95.041410.
Fatemi, Valla, Gibson, Quinn D., Watanabe, Kenji, Taniguchi, Takashi, Cava, Robert J., & Jarillo-Herrero, Pablo. Magnetoresistance and quantum oscillations of an electrostatically tuned semimetal-to-metal transition in ultrathin WTe2. United States. https://doi.org/10.1103/physrevb.95.041410
Fatemi, Valla, Gibson, Quinn D., Watanabe, Kenji, Taniguchi, Takashi, Cava, Robert J., and Jarillo-Herrero, Pablo. Mon .
"Magnetoresistance and quantum oscillations of an electrostatically tuned semimetal-to-metal transition in ultrathin WTe2". United States. https://doi.org/10.1103/physrevb.95.041410. https://www.osti.gov/servlets/purl/1535836.
@article{osti_1535836,
title = {Magnetoresistance and quantum oscillations of an electrostatically tuned semimetal-to-metal transition in ultrathin WTe2},
author = {Fatemi, Valla and Gibson, Quinn D. and Watanabe, Kenji and Taniguchi, Takashi and Cava, Robert J. and Jarillo-Herrero, Pablo},
abstractNote = {In this work, we report on electronic transport measurements of electrostatically gated nanodevices of the semimetal WTe2. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere. At low temperatures, we find that a large magnetoresistance can be turned on and off by electrostatically doping the system between a semimetallic state and an electron-only metallic state, respectively. We confirm the nature of the two regimes by analyzing the magnetoresistance and Hall effect with a two-carrier model, as well as by analysis of Shubnikov-de Haas oscillations, both of which indicate depletion of hole carriers via the electrostatic gate. This confirms that semiclassical transport of two oppositely charged carriers accurately describes the exceptional magnetoresistance observed in this material. Finally, we also find that the magnetoresistance power law is subquadratic and density independent, suggesting new physics specifically in the semimetallic regime.},
doi = {10.1103/physrevb.95.041410},
journal = {Physical Review. B},
number = 4,
volume = 95,
place = {United States},
year = {Mon Jan 30 00:00:00 EST 2017},
month = {Mon Jan 30 00:00:00 EST 2017}
}
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