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Title: Quadratic to linear magnetoresistance tuning in TmB 4

Journal Article · · Physical Review B
 [1];  [1];  [2];  [1];  [1];  [3];  [3];  [2];  [1];  [1]
  1. Nanyang Technological Univ. (Singapore)
  2. Univ. of California, Santa Cruz, CA (United States)
  3. Ames Lab. and Iowa State Univ., Ames, IA (United States)

The change of a material’s electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann’s theory predicts a quadratic growth in magnetoresistance (MR) at low B, and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, two dimensional electron gas (2DEG) show positive, non-saturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angledependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature-independent, suggestive of quantum mechanical origin.

Research Organization:
Ames Lab., Ames, IA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
FG02-06ER46319; AC02-07CH11358
OSTI ID:
1492303
Report Number(s):
IS-J--9853
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 4 Vol. 99; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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