Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Gumyusenge, Aristide; Tran, Dung T.; Luo, Xuyi; Pitch, Gregory M.; Zhao, Yan; Jenkins, Kaelon A.; Dunn, Tim J.; Ayzner, Alexander L.; Savoie, Brett M.; Mei, Jianguo

doi:10.1126/science.aau0759

Title: Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Journal Article · 06 December 2018 · Science

DOI: https://doi.org/10.1126/science.aau0759 · OSTI ID:1490849

^[1]; Tran, Dung T. ^[1]; Luo, Xuyi ^[1]; Pitch, Gregory M. ^[2];

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Purdue Univ., West Lafayette, IN (United States)
Univ. of California, Santa Cruz, CA (United States)
Stanford Univ., Menlo Park, CA (United States)

Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. Here, we report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm²/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1490849

Journal Information:: Science, Journal Name: Science Journal Issue: 6419 Vol. 362; ISSN 0036-8075

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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