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Title: Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO

Abstract

Here, research is described here that is directed toward obtaining p-type ZnO crystals either by doping or by creating native defects. Theoretically, zinc vacancies are shallow acceptors that should allow for p-type conduction. Bulk ZnO crystals can be grown by chemical vapor transport (CVT), melt solidification, and hydrothermal methods. Here we have explored annealing processes with the goal of creating zinc vacancies in bulk ZnO crystals. Positron annihilation spectra reveal the reproducible formation of high concentrations (>1020 cm–3) of isolated zinc vacancies (VZn) in oxygen-annealed, CVT-grown ZnO crystals in the ~100–150 nm near-surface. Melt- and hydrothermally grown samples, in contrast, show insignificant levels of zinc vacancy creation. Photoluminescence (PL) emission spectra indicate a VZn(0/-1) acceptor level at ~ 155–165 meV; red PL (~1.7 eV) emission, related to the VZn(-1/-2) level, was also observed. Infrared absorption spectroscopy reveals the presence of a zinc vacancy complex with a hole binding energy range of 420–450 meV – and with a continuum suggesting a p-type region. XPS measurements support the deficiency of Zn after oxygen annealing the CVT-grown ZnO single crystal.

Authors:
 [1];  [2]; ORCiD logo [3];  [4];  [5]
+ Show Author Affiliations
  1. Korean Institute of Science and Technology Information (KISTI), Seoul (Korea, Republic of). Center for Electronic Materials
  2. Korean Institute of Science and Technology Information (KISTI), Seoul (Korea, Republic of). Center for Electronic Materials; Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  4. Washington State Univ., Pullman, WA (United States)
  5. Washington State Univ., Pullman, WA (United States). Center for Materials Research
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Washington State Univ., Pullman, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Research Foundation of Korea (NRF); USDOE
OSTI Identifier:
1797694
Alternate Identifier(s):
OSTI ID: 1489144; OSTI ID: 1495832
Grant/Contract Number:  
AC05-00OR22725; FG02-07ER46386
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Alloys and Compounds
Additional Journal Information:
Journal Volume: 729; Journal ID: ISSN 0925-8388
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Positron annihilation spectroscopy; ZnO; Zn vacancy; Acceptor level; FTIR; PL; XPS; SEM

Citation Formats

Parmar, Narendra S., Choil, Ji-Won, Boatner, Lynn A., McCluskey, M. D., and Lynn, Kelvin G. Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO. United States: N. p., 2017. Web. doi:10.1016/j.jallcom.2017.09.239.
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Parmar, Narendra S., Choil, Ji-Won, Boatner, Lynn A., McCluskey, M. D., & Lynn, Kelvin G. Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO. United States. https://doi.org/10.1016/j.jallcom.2017.09.239
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Parmar, Narendra S., Choil, Ji-Won, Boatner, Lynn A., McCluskey, M. D., and Lynn, Kelvin G. Fri . "Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO". United States. https://doi.org/10.1016/j.jallcom.2017.09.239. https://www.osti.gov/servlets/purl/1797694.
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@article{osti_1797694,
title = {Formation of high concentrations of isolated Zn vacancies and evidence for their acceptor levels in ZnO},
author = {Parmar, Narendra S. and Choil, Ji-Won and Boatner, Lynn A. and McCluskey, M. D. and Lynn, Kelvin G.},
abstractNote = {Here, research is described here that is directed toward obtaining p-type ZnO crystals either by doping or by creating native defects. Theoretically, zinc vacancies are shallow acceptors that should allow for p-type conduction. Bulk ZnO crystals can be grown by chemical vapor transport (CVT), melt solidification, and hydrothermal methods. Here we have explored annealing processes with the goal of creating zinc vacancies in bulk ZnO crystals. Positron annihilation spectra reveal the reproducible formation of high concentrations (>1020 cm–3) of isolated zinc vacancies (VZn) in oxygen-annealed, CVT-grown ZnO crystals in the ~100–150 nm near-surface. Melt- and hydrothermally grown samples, in contrast, show insignificant levels of zinc vacancy creation. Photoluminescence (PL) emission spectra indicate a VZn(0/-1) acceptor level at ~ 155–165 meV; red PL (~1.7 eV) emission, related to the VZn(-1/-2) level, was also observed. Infrared absorption spectroscopy reveals the presence of a zinc vacancy complex with a hole binding energy range of 420–450 meV – and with a continuum suggesting a p-type region. XPS measurements support the deficiency of Zn after oxygen annealing the CVT-grown ZnO single crystal.},
doi = {10.1016/j.jallcom.2017.09.239},
journal = {Journal of Alloys and Compounds},
number = ,
volume = 729,
place = {United States},
year = {Fri Sep 22 00:00:00 EDT 2017},
month = {Fri Sep 22 00:00:00 EDT 2017}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.jallcom.2017.09.239
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Cited by: 21 works
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Figures / Tables:

TABLE I TABLE I: Nomenclature for different states of CVT ZnO crystals used in the manuscrip
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Works referenced in this record:

Production of native donors in ZnO by annealing at high temperature in Zn vapor
journal, October 2005

  • Halliburton, L. E.; Giles, N. C.; Garces, N. Y.
  • Applied Physics Letters, Vol. 87, Issue 17
  • DOI: 10.1063/1.2117630

Irradiation-induced defects in ZnO studied by positron annihilation spectroscopy
journal, August 2004

  • Tuomisto, F.; Saarinen, K.; Look, D. C.
  • physica status solidi (a), Vol. 201, Issue 10
  • DOI: 10.1002/pssa.200404809

Potassium acceptor doping of ZnO crystals
journal, May 2015

  • Parmar, Narendra S.; Corolewski, Caleb D.; McCluskey, Matthew D.
  • AIP Advances, Vol. 5, Issue 5
  • DOI: 10.1063/1.4919932

Acceptors in ZnO nanocrystals
journal, June 2011

  • Teklemichael, S. T.; Oo, W. M. Hlaing; McCluskey, M. D.
  • Applied Physics Letters, Vol. 98, Issue 23
  • DOI: 10.1063/1.3598411

Green photoluminescence in ZnO crystals: a combined study using positron annihilation, photoluminescence, and hall measurements
journal, September 2015

  • Parmar, N. S.; Swain, S. K.; Lynn, K. G.
  • Journal of Materials Science: Materials in Electronics, Vol. 26, Issue 12
  • DOI: 10.1007/s10854-015-3699-3

Hydrogen-related complexes in Li-diffused ZnO single crystals
journal, July 2016

  • Corolewski, Caleb D.; Parmar, Narendra S.; Lynn, Kelvin G.
  • Journal of Applied Physics, Vol. 120, Issue 3
  • DOI: 10.1063/1.4959106

Infrared Absorption by Ag, Cu, and Au Acceptors in ZnTe
journal, July 1981

  • Samindayar, K.; Magnea, N.; Pautrat, J. L.
  • physica status solidi (b), Vol. 106, Issue 1
  • DOI: 10.1002/pssb.2221060124

Oxygen and zinc vacancies in as-grown ZnO single crystals
journal, August 2009

Enhanced fluorescence imaging performance of hydrophobic colloidal ZnO nanoparticles by a facile method
journal, January 2015

Electronic Raman scattering and infrared absorption spectra of shallow acceptors in ZnTe
journal, March 1979

Vibrational Spectroscopy of Na–H Complexes in ZnO
journal, August 2013

  • Parmar, Narendra S.; McCluskey, Matthew D.; Lynn, Kelvin G.
  • Journal of Electronic Materials, Vol. 42, Issue 12
  • DOI: 10.1007/s11664-013-2723-8

Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n -Type ZnO
journal, November 2003

Sodium doping in ZnO crystals
journal, January 2015

  • Parmar, N. S.; Lynn, K. G.
  • Applied Physics Letters, Vol. 106, Issue 2
  • DOI: 10.1063/1.4905594

Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
journal, November 1997

  • Minegishi, Kazunori; Koiwai, Yasushi; Kikuchi, Yukinobu
  • Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 11A
  • DOI: 10.1143/JJAP.36.L1453

Interaction of positron beams with surfaces, thin films, and interfaces
journal, July 1988

Oxygen Deficiency and Hydrogen Turn ZnO Red
journal, February 2010

X‐ray photoemission spectroscopy studies of Sn‐doped indium‐oxide films
journal, August 1977

  • Fan, John C. C.; Goodenough, John B.
  • Journal of Applied Physics, Vol. 48, Issue 8
  • DOI: 10.1063/1.324149

Nature of Native Defects in ZnO
journal, August 2007

Introduction and recovery of point defects in electron-irradiated ZnO
journal, August 2005

Nitrogen is a deep acceptor in ZnO
journal, April 2011

  • Tarun, M. C.; Iqbal, M. Zafar; McCluskey, M. D.
  • AIP Advances, Vol. 1, Issue 2
  • DOI: 10.1063/1.3582819

Defect engineering of ZnO
journal, October 2008

About the Cu-related green luminescence band in ZnO
journal, January 2009

  • Reshchikov, Michael A.; Avrutin, V.; Izyumskaya, N.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 3
  • DOI: 10.1116/1.3110023

Cu-doping of ZnO by nuclear transmutation
journal, November 2011

  • Selim, F. A.; Tarun, M. C.; Wall, D. E.
  • Applied Physics Letters, Vol. 99, Issue 20
  • DOI: 10.1063/1.3662014

A comprehensive review of ZnO materials and devices
journal, August 2005

  • Özgür, Ü.; Alivov, Ya. I.; Liu, C.
  • Journal of Applied Physics, Vol. 98, Issue 4
  • DOI: 10.1063/1.1992666

P-type doping and devices based on ZnO
journal, March 2004

XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films
journal, July 1996

Native point defects in ZnO
journal, October 2007

Effect of preheating temperature on structural and optical properties of ZnO thin films by sol–gel process
journal, November 2005

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    Works referencing / citing this record:

    Role of Ga-substitution in ZnO on defect states, carrier density, mobility and UV sensing
    journal, September 2019

    • Mishra, Prashant Kumar; Ayaz, Saniya; Srivastava, Tulika
    • Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 20
    • DOI: 10.1007/s10854-019-02221-z

    Zn Vacancy Formation Energy and Diffusion Coefficient of CVT ZnO Crystals in the Sub-Surface Micron Region
    journal, September 2018

    Zn Vacancy Formation Energy and Diffusion Coefficient of CVT ZnO Crystals in the Sub-Surface Micron Region
    journal, September 2018

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      Figures / Tables found in this record:

      TABLE I (p. 4)table
      TABLE II (p. 9)table
      Figure 1 (p. 21)figure
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      Figure 3 (p. 23)figure
      Figure 4 (p. 24)figure
      Figure 5 (p. 25)figure
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      Figure 8 (p. 27)figure
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