Connection topology of step edge state bands at the surface of a three dimensional topological insulator
Abstract
Topological insulators (TIs) in the Bi2Se3 family manifest helical Dirac surface states that span the topologically ordered bulk band gap. Recent scanning tunneling microscopy measurements have discovered additional states in the bulk band gap of Bi2Se3 and Bi2Te3, localized at one-dimensional step edges. Here numerical simulations of a TI surface are used to explore the phenomenology of edge state formation at the single-quintuple layer step defects found ubiquitously on these materials. The modeled one-dimensional edge states are found to exhibit a stable topological connection to the two-dimensional surface state Dirac point.
- Authors:
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1459225
- Alternate Identifier(s):
- OSTI ID: 1484212
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Published Article
- Journal Name:
- New Journal of Physics
- Additional Journal Information:
- Journal Name: New Journal of Physics Journal Volume: 20 Journal Issue: 7; Journal ID: ISSN 1367-2630
- Publisher:
- IOP Publishing
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 74 ATOMIC AND MOLECULAR PHYSICS
Citation Formats
Xu, Yishuai, Jiang, Guodong, Chiu, Janet, Miao, Lin, Kotta, Erica, Zhang, Yutan, Biswas, Rudro R., and Wray, L. Andrew. Connection topology of step edge state bands at the surface of a three dimensional topological insulator. United Kingdom: N. p., 2018.
Web. doi:10.1088/1367-2630/aacef6.
Xu, Yishuai, Jiang, Guodong, Chiu, Janet, Miao, Lin, Kotta, Erica, Zhang, Yutan, Biswas, Rudro R., & Wray, L. Andrew. Connection topology of step edge state bands at the surface of a three dimensional topological insulator. United Kingdom. https://doi.org/10.1088/1367-2630/aacef6
Xu, Yishuai, Jiang, Guodong, Chiu, Janet, Miao, Lin, Kotta, Erica, Zhang, Yutan, Biswas, Rudro R., and Wray, L. Andrew. Sun .
"Connection topology of step edge state bands at the surface of a three dimensional topological insulator". United Kingdom. https://doi.org/10.1088/1367-2630/aacef6.
@article{osti_1459225,
title = {Connection topology of step edge state bands at the surface of a three dimensional topological insulator},
author = {Xu, Yishuai and Jiang, Guodong and Chiu, Janet and Miao, Lin and Kotta, Erica and Zhang, Yutan and Biswas, Rudro R. and Wray, L. Andrew},
abstractNote = {Topological insulators (TIs) in the Bi2Se3 family manifest helical Dirac surface states that span the topologically ordered bulk band gap. Recent scanning tunneling microscopy measurements have discovered additional states in the bulk band gap of Bi2Se3 and Bi2Te3, localized at one-dimensional step edges. Here numerical simulations of a TI surface are used to explore the phenomenology of edge state formation at the single-quintuple layer step defects found ubiquitously on these materials. The modeled one-dimensional edge states are found to exhibit a stable topological connection to the two-dimensional surface state Dirac point.},
doi = {10.1088/1367-2630/aacef6},
journal = {New Journal of Physics},
number = 7,
volume = 20,
place = {United Kingdom},
year = {Sun Jul 01 00:00:00 EDT 2018},
month = {Sun Jul 01 00:00:00 EDT 2018}
}
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https://doi.org/10.1088/1367-2630/aacef6
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Works referencing / citing this record:
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