DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Importance of van der Waals interactions for ab initio studies of topological insulators

Abstract

We investigate the lattice and electronic structures of the bulk and surface of the prototypical layered topological insulators Bi2Se3 and Bi2Te3 using ab initio density functional methods, and systematically compare the results of different methods of including van der Waals (vdW) interactions. We show that the methods utilizing semi-empirical energy corrections yield accurate descriptions of these materials, with the most precise results obtained by properly accounting for the long-range tail of the vdW interactions. The bulk lattice constants, distances between quintuple layers and the Dirac velocity of the topological surface states (TSS) are all in excellent agreement with experiment. In Bi2Te3, hexagonal warping of the energy dispersion leads to complex spin textures of the TSS at moderate energies, while in Bi2Se3 these states remain almost perfectly helical away from the Dirac point, showing appreciable signs of hexagonal warping at much higher energies, above the minimum of the bulk conduction band. Furthermore, our results establish a framework for unified and systematic self-consistent first principles calculations of topological insulators in bulk, slab and interface geometries, and provides the necessary first step toward ab initio modeling of topological heterostructures.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]
  1. Louisiana State Univ., Baton Rouge, LA (United States)
Publication Date:
Research Org.:
Louisiana State Univ., Baton Rouge, LA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1715523
Grant/Contract Number:  
SC0012432; DMR-1410741
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physics. Condensed Matter
Additional Journal Information:
Journal Volume: 33; Journal Issue: 3; Journal ID: ISSN 0953-8984
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Topological insulators; Density functional theory; Topological surface states

Citation Formats

Shirali, K., Shelton, W. A., and Vekhter, I. Importance of van der Waals interactions for ab initio studies of topological insulators. United States: N. p., 2020. Web. doi:10.1088/1361-648x/abbdbc.
Shirali, K., Shelton, W. A., & Vekhter, I. Importance of van der Waals interactions for ab initio studies of topological insulators. United States. https://doi.org/10.1088/1361-648x/abbdbc
Shirali, K., Shelton, W. A., and Vekhter, I. Mon . "Importance of van der Waals interactions for ab initio studies of topological insulators". United States. https://doi.org/10.1088/1361-648x/abbdbc. https://www.osti.gov/servlets/purl/1715523.
@article{osti_1715523,
title = {Importance of van der Waals interactions for ab initio studies of topological insulators},
author = {Shirali, K. and Shelton, W. A. and Vekhter, I.},
abstractNote = {We investigate the lattice and electronic structures of the bulk and surface of the prototypical layered topological insulators Bi2Se3 and Bi2Te3 using ab initio density functional methods, and systematically compare the results of different methods of including van der Waals (vdW) interactions. We show that the methods utilizing semi-empirical energy corrections yield accurate descriptions of these materials, with the most precise results obtained by properly accounting for the long-range tail of the vdW interactions. The bulk lattice constants, distances between quintuple layers and the Dirac velocity of the topological surface states (TSS) are all in excellent agreement with experiment. In Bi2Te3, hexagonal warping of the energy dispersion leads to complex spin textures of the TSS at moderate energies, while in Bi2Se3 these states remain almost perfectly helical away from the Dirac point, showing appreciable signs of hexagonal warping at much higher energies, above the minimum of the bulk conduction band. Furthermore, our results establish a framework for unified and systematic self-consistent first principles calculations of topological insulators in bulk, slab and interface geometries, and provides the necessary first step toward ab initio modeling of topological heterostructures.},
doi = {10.1088/1361-648x/abbdbc},
journal = {Journal of Physics. Condensed Matter},
number = 3,
volume = 33,
place = {United States},
year = {Mon Oct 19 00:00:00 EDT 2020},
month = {Mon Oct 19 00:00:00 EDT 2020}
}

Works referenced in this record:

G W calculations for Bi 2 Te 3 and Sb 2 Te 3 thin films: Electronic and topological properties
journal, May 2016


Topological insulators and superconductors
journal, October 2011


Efficient Band Gap Prediction for Solids
journal, November 2010


Lattice-matched heterojunctions between topological and normal insulators: A first-principles study
journal, February 2017


Using gapped topological surface states of Bi 2 Se 3 films in a field effect transistor
journal, February 2017

  • Sun, Jifeng; Singh, David J.
  • Journal of Applied Physics, Vol. 121, Issue 6
  • DOI: 10.1063/1.4975819

First-principles study of surface states in topological insulators Bi 2 Te 3 and Bi 2 Se 3 : film thickness dependence
journal, August 2014


Effect of Sb substitution on the topological surface states in Bi 2 Se 3 single crystals: a magneto-transport study
journal, February 2017


Interface symmetry and spin control in topological-insulator–semiconductor heterostructures
journal, June 2017


Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films
journal, August 2015

  • Zeljkovic, Ilija; Walkup, Daniel; Assaf, Badih A.
  • Nature Nanotechnology, Vol. 10, Issue 10
  • DOI: 10.1038/nnano.2015.177

Surface and substrate induced effects on thin films of the topological insulators Bi 2 Se 3 and Bi 2 Te 3
journal, May 2013


Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures
journal, September 2015


First-principles electronic structure and its relation to thermoelectric properties of Bi 2 Te 3
journal, February 2001


Complex band structure of topological insulator Bi 2 Se 3
journal, August 2016


Quantum Hall edge states in topological insulator nanoribbons
journal, September 2016


Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009


The Optical Properties of Bismuth Telluride
journal, October 1958


Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
journal, July 2010


First-principles modeling of binary layered topological insulators: Structural optimization and exchange-correlation functionals
journal, February 2020


Characterizing the structure of topological insulator thin films
journal, August 2015

  • Richardella, Anthony; Kandala, Abhinav; Lee, Joon Sue
  • APL Materials, Vol. 3, Issue 8
  • DOI: 10.1063/1.4926455

Effect of Bi bilayers on the topological states of Bi 2 Se 3 : A first-principles study
journal, October 2014


Density functional theory and the band gap problem
journal, March 1985

  • Perdew, John P.
  • International Journal of Quantum Chemistry, Vol. 28, Issue S19
  • DOI: 10.1002/qua.560280846

Spin Polarization and Transport of Surface States in the Topological Insulators Bi 2 Se 3 and Bi 2 Te 3 from First Principles
journal, December 2010


Bulk band structure of Bi 2 Te 3
journal, August 2014


Crystallography Open Database (COD): an open-access collection of crystal structures and platform for world-wide collaboration
journal, November 2011

  • Gražulis, Saulius; Daškevič, Adriana; Merkys, Andrius
  • Nucleic Acids Research, Vol. 40, Issue D1
  • DOI: 10.1093/nar/gkr900

Band structure and spin texture of Bi 2 Se 3   3 d ferromagnetic metal interface
journal, July 2016


COD::CIF::Parser : an error-correcting CIF parser for the Perl language
journal, February 2016

  • Merkys, Andrius; Vaitkus, Antanas; Butkus, Justas
  • Journal of Applied Crystallography, Vol. 49, Issue 1
  • DOI: 10.1107/s1600576715022396

The dimensional crossover of quantum transport properties in few-layered Bi 2 Se 3 thin films
journal, January 2019

  • Yang, Liang; Wang, Zhenhua; Li, Mingze
  • Nanoscale Advances, Vol. 1, Issue 6
  • DOI: 10.1039/c9na00036d

Communication: Surface stability and topological surface states of cleaved Bi 2 Se 3 : First-principles studies
journal, October 2015

  • Zhang, Y. N.
  • The Journal of Chemical Physics, Vol. 143, Issue 15
  • DOI: 10.1063/1.4933298

Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010

  • Zhang, Yi; He, Ke; Chang, Cui-Zu
  • Nature Physics, Vol. 6, Issue 8
  • DOI: 10.1038/nphys1689

Exotic Topological Insulator States and Topological Phase Transitions in Sb 2 Se 3 –Bi 2 Se 3 Heterostructures
journal, February 2012

  • Zhang, Qianfan; Zhang, Zhiyong; Zhu, Zhiyong
  • ACS Nano, Vol. 6, Issue 3
  • DOI: 10.1021/nn2045328

Bulk Fermi surface coexistence with Dirac surface state in Bi 2 Se 3 : A comparison of photoemission and Shubnikov–de Haas measurements
journal, May 2010


van der Waals Bonding in Layered Compounds from Advanced Density-Functional First-Principles Calculations
journal, June 2012


A tunable topological insulator in the spin helical Dirac transport regime
journal, July 2009


Structure and bonding properties of ( Bi 2 Se 3 ) m ( Bi 2 ) n stacks by first-principles density functional theory
journal, November 2005


A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
journal, April 2010

  • Grimme, Stefan; Antony, Jens; Ehrlich, Stephan
  • The Journal of Chemical Physics, Vol. 132, Issue 15
  • DOI: 10.1063/1.3382344

Screened exchange LDA determination of the ground and excited state properties of thermoelectrics: Bi 2 Te 3
journal, July 2005


Long-range correlation energy calculated from coupled atomic response functions
journal, May 2014

  • Ambrosetti, Alberto; Reilly, Anthony M.; DiStasio, Robert A.
  • The Journal of Chemical Physics, Vol. 140, Issue 18
  • DOI: 10.1063/1.4865104

Hexagonally Deformed Fermi Surface of the 3D Topological Insulator Bi 2 Se 3
journal, August 2010


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Higher-accuracy van der Waals density functional
journal, August 2010


CO Oxidation Facilitated by Robust Surface States on Au-Covered Topological Insulators
journal, July 2011


Surface states of topological insulators
journal, August 2012


Colloquium: Topological insulators
journal, November 2010


The crystal structure of Bi2Te3−xSex
journal, March 1963


Computing stoichiometric molecular composition from crystal structures
journal, January 2015

  • Gražulis, Saulius; Merkys, Andrius; Vaitkus, Antanas
  • Journal of Applied Crystallography, Vol. 48, Issue 1
  • DOI: 10.1107/S1600576714025904

G W study of topological insulators Bi 2 Se 3 , Bi 2 Te 3 , and Sb 2 Te 3 : Beyond the perturbative one-shot approach
journal, July 2013


Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

  • Xia, Y.; Qian, D.; Hsieh, D.
  • Nature Physics, Vol. 5, Issue 6, p. 398-402
  • DOI: 10.1038/nphys1274

Accurate Ab Initio Quantum Mechanics Simulations of Bi 2 Se 3 and Bi 2 Te 3 Topological Insulator Surfaces
journal, September 2015

  • Crowley, Jason M.; Tahir-Kheli, Jamil; Goddard, William A.
  • The Journal of Physical Chemistry Letters, Vol. 6, Issue 19
  • DOI: 10.1021/acs.jpclett.5b01586

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009

  • Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
  • Nature Physics, Vol. 5, Issue 6, p. 438-442
  • DOI: 10.1038/nphys1270

Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi 2 Se 3
journal, October 2010


Evidence for a direct band gap in the topological insulator Bi 2 Se 3 from theory and experiment
journal, March 2013


Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006

  • Grimme, Stefan
  • Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799
  • DOI: 10.1002/jcc.20495

Tkatchenko-Scheffler van der Waals correction method with and without self-consistent screening applied to solids
journal, February 2013


Versatile van der Waals Density Functional Based on a Meta-Generalized Gradient Approximation
journal, October 2016


Structural and electronic properties of highly doped topological insulator Bi 2 Se 3 crystals
journal, December 2012

  • Cao, Helin; Xu, Suyang; Miotkowski, Ireneusz
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 1-2
  • DOI: 10.1002/pssr.201206457

Quasiparticle effects in the bulk and surface-state bands of Bi 2 Se 3 and Bi 2 Te 3 topological insulators
journal, April 2012


Rhombohedral S b 2 S e 3 as an intrinsic topological insulator due to strong van der Waals interlayer coupling
journal, February 2018


Works referencing / citing this record:

Electronic properties of Bi2Se3 dopped by 3d transition metal (Mn, Fe, Co, or Ni) ions
journal, November 2020

  • Ptok, Andrzej; Kapcia, Konrad Jerzy; Ciechan, Anna
  • Journal of Physics: Condensed Matter, Vol. 33, Issue 6
  • DOI: 10.1088/1361-648x/abba6a