Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films
Abstract
We report on the thermal resistances of thin films (20 nm) of hafnium zirconium oxide (Hf1–xZrxO2) with compositions ranging from 0 ≤ x ≤ 1. Measurements were made via time-domain thermoreflectance and analyzed to determine the effective thermal resistance of the films in addition to their associated thermal boundary resistances. We find effective thermal resistances ranging from 28.79 to 24.72 m2 K GW-1 for amorphous films, which decreased to 15.81 m2 K GW-1 upon crystallization. Furthermore, we analyze the heat capacity for two compositions, x = 0.5 and x = 0.7, of Hf1–xZrxO2 and find them to be 2.18 ± 0.56 and 2.64 ± 0.53 MJ m-3 K-1, respectively.
- Authors:
-
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering, Dept. of Electrical and Computer Engineering
- Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering, Dept. of Materials Science and Engineering, Dept. of Physics
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1483978
- Report Number(s):
- SAND-2018-12885J
Journal ID: ISSN 0003-6951; 669810
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 113; Journal Issue: 19; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Scott, Ethan A., Smith, Sean W., Henry, M. David, Rost, Christina M., Giri, Ashutosh, Gaskins, John T., Fields, Shelby S., Jaszewski, Samantha T., Ihlefeld, Jon F., and Hopkins, Patrick E. Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films. United States: N. p., 2018.
Web. doi:10.1063/1.5052244.
Scott, Ethan A., Smith, Sean W., Henry, M. David, Rost, Christina M., Giri, Ashutosh, Gaskins, John T., Fields, Shelby S., Jaszewski, Samantha T., Ihlefeld, Jon F., & Hopkins, Patrick E. Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films. United States. https://doi.org/10.1063/1.5052244
Scott, Ethan A., Smith, Sean W., Henry, M. David, Rost, Christina M., Giri, Ashutosh, Gaskins, John T., Fields, Shelby S., Jaszewski, Samantha T., Ihlefeld, Jon F., and Hopkins, Patrick E. Mon .
"Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films". United States. https://doi.org/10.1063/1.5052244. https://www.osti.gov/servlets/purl/1483978.
@article{osti_1483978,
title = {Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films},
author = {Scott, Ethan A. and Smith, Sean W. and Henry, M. David and Rost, Christina M. and Giri, Ashutosh and Gaskins, John T. and Fields, Shelby S. and Jaszewski, Samantha T. and Ihlefeld, Jon F. and Hopkins, Patrick E.},
abstractNote = {We report on the thermal resistances of thin films (20 nm) of hafnium zirconium oxide (Hf1–xZrxO2) with compositions ranging from 0 ≤ x ≤ 1. Measurements were made via time-domain thermoreflectance and analyzed to determine the effective thermal resistance of the films in addition to their associated thermal boundary resistances. We find effective thermal resistances ranging from 28.79 to 24.72 m2 K GW-1 for amorphous films, which decreased to 15.81 m2 K GW-1 upon crystallization. Furthermore, we analyze the heat capacity for two compositions, x = 0.5 and x = 0.7, of Hf1–xZrxO2 and find them to be 2.18 ± 0.56 and 2.64 ± 0.53 MJ m-3 K-1, respectively.},
doi = {10.1063/1.5052244},
journal = {Applied Physics Letters},
number = 19,
volume = 113,
place = {United States},
year = {Mon Nov 05 00:00:00 EST 2018},
month = {Mon Nov 05 00:00:00 EST 2018}
}
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Works referencing / citing this record:
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