Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films

Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; Henry, M. D.; Brumbach, M. T.; Ihlefeld, J. F.

doi:10.1063/1.4976519

Title: Pyroelectric response in crystalline hafnium zirconium oxide (Hf _1- _x Zr _x O ₂ ) thin films

Abstract

Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf_1-xZr_xO₂) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm^-2K^-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, 1).

Authors:

Smith, S. W. ^[1];

^[1]; Rodriguez, M. A. ^[1]; Henry, M. D. ^[1]; Brumbach, M. T. ^[1]; Ihlefeld, J. F. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: 2017-02-13

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1356224

Report Number(s):: SAND-2017-2871J
Journal ID: ISSN 0003-6951; 651794

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 7; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Pyroelectricity; Polarization; Electric measurements; Ferroelectric materials; Plasma etching

Citation Formats


                    Smith, S. W., Kitahara, A. R., Rodriguez, M. A., Henry, M. D., Brumbach, M. T., and Ihlefeld, J. F. Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4976519.

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                    Smith, S. W., Kitahara, A. R., Rodriguez, M. A., Henry, M. D., Brumbach, M. T., & Ihlefeld, J. F. Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films.  United States.  https://doi.org/10.1063/1.4976519

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                    Smith, S. W., Kitahara, A. R., Rodriguez, M. A., Henry, M. D., Brumbach, M. T., and Ihlefeld, J. F. Mon .  
"Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films".  United States.  https://doi.org/10.1063/1.4976519.  https://www.osti.gov/servlets/purl/1356224.

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@article{osti_1356224,

  title        = {Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films},

  author       = {Smith, S. W. and Kitahara, A. R. and Rodriguez, M. A. and Henry, M. D. and Brumbach, M. T. and Ihlefeld, J. F.},

  abstractNote = {Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, 1).},

  doi          = {10.1063/1.4976519},

  journal      = {Applied Physics Letters},

  number       = 7,

  volume       = 110,

  place        = {United States},

  year         = {2017},

  month        = {2}

}

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Title: Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films

Abstract

Citation Formats

Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides journal, January 2014

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations journal, July 2016

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films journal, March 2012

Characterization of materials for integrated pyroelectric sensors journal, March 1991

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Use of low‐frequency sinusoidal temperature waves to separate pyroelectric currents from nonpyroelectric currents. Part II. Experiment journal, December 1982

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films journal, January 2015

Stabilizing the ferroelectric phase in doped hafnium oxide journal, August 2015

Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors journal, October 2002

Pyroelectric devices and materials journal, December 1986

Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 -Based Films journal, February 2015

On the structural origins of ferroelectricity in HfO 2 thin films journal, April 2015

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO 2 journal, October 2016

Impact of mechanical stress on ferroelectricity in (Hf 0.5 Zr 0.5 )O 2 thin films journal, June 2016

Ferroelectricity in hafnium oxide thin films journal, September 2011

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Thermal resistance and heat capacity in hafnium zirconium oxide (Hf 1–x Zr x O 2 ) dielectrics and ferroelectric thin films journal, November 2018

Stabilization of ferroelectric phase of Hf 0.58 Zr 0.42 O 2 on NbN at 4 K journal, March 2019

Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO 2 thin films journal, March 2019

Improvement in ferroelectricity of Hf x Zr 1−x O 2 thin films using top- and bottom-ZrO 2 nucleation layers journal, June 2019

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors journal, October 2019

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Title: Pyroelectric response in crystalline hafnium zirconium oxide (Hf _1- _x Zr _x O ₂ ) thin films

Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides
journal, January 2014

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations
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Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
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Characterization of materials for integrated pyroelectric sensors
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Pyroelectric Arrays: Ceramics and Thin Films
journal, July 2004

Use of low‐frequency sinusoidal temperature waves to separate pyroelectric currents from nonpyroelectric currents. Part II. Experiment
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Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf _0.5 Zr _0.5 O ₂ thin films
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journal, August 2015

Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
journal, October 2002

Pyroelectric devices and materials
journal, December 1986

Ferroelectricity and Antiferroelectricity of Doped Thin HfO ₂ -Based Films
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On the structural origins of ferroelectricity in HfO ₂ thin films
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Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO ₂
journal, October 2016

Impact of mechanical stress on ferroelectricity in (Hf _0.5 Zr _0.5 )O ₂ thin films
journal, June 2016

Ferroelectricity in hafnium oxide thin films
journal, September 2011

Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films
journal, March 2015

Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors
journal, November 2015

Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric
journal, February 2014

Simultaneous structure and size–strain refinement by the Rietveld method
journal, August 1990

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
journal, November 2013

Ferroelectricity in Simple Binary ZrO ₂ and HfO ₂
journal, July 2012

Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
journal, February 2009

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO ₂
journal, January 2018

Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO ₂
journal, March 2018

Effect of Annealing Ferroelectric HfO ₂ Thin Films: In Situ, High Temperature X-Ray Diffraction
journal, May 2018

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journal, December 2019

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journal, September 2018

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journal, April 2018

Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO ₂ ) thin films
journal, September 2018

Thermal resistance and heat capacity in hafnium zirconium oxide (Hf _1–x Zr _x O ₂ ) dielectrics and ferroelectric thin films
journal, November 2018

Stabilization of ferroelectric phase of Hf _0.58 Zr _0.42 O ₂ on NbN at 4 K
journal, March 2019

Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO ₂ thin films
journal, March 2019

Improvement in ferroelectricity of Hf _x Zr _1−x O ₂ thin films using top- and bottom-ZrO ₂ nucleation layers
journal, June 2019

Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf _0.5 Zr _0.5 O ₂ /TiN capacitors
journal, October 2019

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