Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films
Abstract
Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, 1).
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1356224
- Report Number(s):
- SAND-2017-2871J
Journal ID: ISSN 0003-6951; 651794
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 7; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Pyroelectricity; Polarization; Electric measurements; Ferroelectric materials; Plasma etching
Citation Formats
Smith, S. W., Kitahara, A. R., Rodriguez, M. A., Henry, M. D., Brumbach, M. T., and Ihlefeld, J. F. Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films. United States: N. p., 2017.
Web. doi:10.1063/1.4976519.
Smith, S. W., Kitahara, A. R., Rodriguez, M. A., Henry, M. D., Brumbach, M. T., & Ihlefeld, J. F. Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films. United States. https://doi.org/10.1063/1.4976519
Smith, S. W., Kitahara, A. R., Rodriguez, M. A., Henry, M. D., Brumbach, M. T., and Ihlefeld, J. F. Mon .
"Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films". United States. https://doi.org/10.1063/1.4976519. https://www.osti.gov/servlets/purl/1356224.
@article{osti_1356224,
title = {Pyroelectric response in crystalline hafnium zirconium oxide (Hf 1- x Zr x O 2 ) thin films},
author = {Smith, S. W. and Kitahara, A. R. and Rodriguez, M. A. and Henry, M. D. and Brumbach, M. T. and Ihlefeld, J. F.},
abstractNote = {Pyroelectric coefficients were measured for 20 nm thick crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films across a composition range of 0 ≤ x ≤ 1. Pyroelectric currents were collected near room temperature under zero applied bias and a sinusoidal oscillating temperature profile to separate the influence of non-pyroelectric currents. The pyroelectric coefficient was observed to correlate with zirconium content, increased orthorhombic/tetragonal phase content, and maximum polarization response. The largest measured absolute value was 48 μCm-2K-1 for a composition with x = 0.64, while no pyroelectric response was measured for compositions which displayed no remanent polarization (x = 0, 0.91, 1).},
doi = {10.1063/1.4976519},
journal = {Applied Physics Letters},
number = 7,
volume = 110,
place = {United States},
year = {2017},
month = {2}
}
Web of Science
Works referenced in this record:
Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides
journal, January 2014
- Zeng, Qingfeng; Oganov, Artem R.; Lyakhov, Andriy O.
- Acta Crystallographica Section C Structural Chemistry, Vol. 70, Issue 2, p. 76-84
Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations
journal, July 2016
- Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan
- Journal of the American Ceramic Society, Vol. 99, Issue 8
Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
journal, March 2012
- Mueller, Stefan; Mueller, Johannes; Singh, Aarti
- Advanced Functional Materials, Vol. 22, Issue 11
Characterization of materials for integrated pyroelectric sensors
journal, March 1991
- Ploss, Bernd; Bauer, Siegfried
- Sensors and Actuators A: Physical, Vol. 26, Issue 1-3
Pyroelectric Arrays: Ceramics and Thin Films
journal, July 2004
- Whatmore, Roger W.
- Journal of Electroceramics, Vol. 13, Issue 1-3
Use of low‐frequency sinusoidal temperature waves to separate pyroelectric currents from nonpyroelectric currents. Part II. Experiment
journal, December 1982
- Sharp, Edward J.; Garn, Lynn E.
- Journal of Applied Physics, Vol. 53, Issue 12
Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films
journal, January 2015
- Park, M. H.; Kim, H. J.; Kim, Y. J.
- Journal of Materials Chemistry C, Vol. 3, Issue 24
Stabilizing the ferroelectric phase in doped hafnium oxide
journal, August 2015
- Hoffmann, M.; Schroeder, U.; Schenk, T.
- Journal of Applied Physics, Vol. 118, Issue 7
Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
journal, October 2002
- Hausmann, Dennis M.; Kim, Esther; Becker, Jill
- Chemistry of Materials, Vol. 14, Issue 10
Pyroelectric devices and materials
journal, December 1986
- Whatmore, R. W.
- Reports on Progress in Physics, Vol. 49, Issue 12
Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 -Based Films
journal, February 2015
- Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon
- Advanced Materials, Vol. 27, Issue 11
On the structural origins of ferroelectricity in HfO 2 thin films
journal, April 2015
- Sang, Xiahan; Grimley, Everett D.; Schenk, Tony
- Applied Physics Letters, Vol. 106, Issue 16
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO 2
journal, October 2016
- Hoffmann, Michael; Pešić, Milan; Chatterjee, Korok
- Advanced Functional Materials, Vol. 26, Issue 47
Impact of mechanical stress on ferroelectricity in (Hf 0.5 Zr 0.5 )O 2 thin films
journal, June 2016
- Shiraishi, Takahisa; Katayama, Kiliha; Yokouchi, Tatsuhiko
- Applied Physics Letters, Vol. 108, Issue 26
Ferroelectricity in hafnium oxide thin films
journal, September 2011
- Böscke, T. S.; Müller, J.; Bräuhaus, D.
- Applied Physics Letters, Vol. 99, Issue 10
Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films
journal, March 2015
- Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin
- Nano Energy, Vol. 12
Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors
journal, November 2015
- Hoffmann, Michael; Schroeder, Uwe; Künneth, Christopher
- Nano Energy, Vol. 18
Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric
journal, February 2014
- Cheng, Chun Hu; Chin, Albert
- IEEE Electron Device Letters, Vol. 35, Issue 2
Simultaneous structure and size–strain refinement by the Rietveld method
journal, August 1990
- Lutterotti, L.; Scardi, P.
- Journal of Applied Crystallography, Vol. 23, Issue 4
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
journal, November 2013
- Zhou, Dayu; Xu, Jin; Li, Qing
- Applied Physics Letters, Vol. 103, Issue 19
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
journal, July 2012
- Müller, Johannes; Böscke, Tim S.; Schröder, Uwe
- Nano Letters, Vol. 12, Issue 8
Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
journal, February 2009
- Jansen, H. V.; de Boer, M. J.; Unnikrishnan, S.
- Journal of Micromechanics and Microengineering, Vol. 19, Issue 3, Article No. 033001
Works referencing / citing this record:
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO 2
journal, January 2018
- Grimley, Everett D.; Schenk, Tony; Mikolajick, Thomas
- Advanced Materials Interfaces, Vol. 5, Issue 5
Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO 2
journal, March 2018
- Park, Min Hyuk; Chung, Ching-Chang; Schenk, Tony
- Advanced Electronic Materials, Vol. 4, Issue 4
Effect of Annealing Ferroelectric HfO 2 Thin Films: In Situ, High Temperature X-Ray Diffraction
journal, May 2018
- Park, Min Hyuk; Chung, Ching-Chang; Schenk, Tony
- Advanced Electronic Materials, Vol. 4, Issue 7
Toward Thick Piezoelectric HfO 2 ‐Based Films
journal, December 2019
- Schenk, Tony; Godard, Nicolas; Mahjoub, Aymen
- physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 3
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
journal, September 2018
- Kim, Si Joon; Mohan, Jaidah; Summerfelt, Scott R.
- JOM, Vol. 71, Issue 1
Pyroelectricity of silicon-doped hafnium oxide thin films
journal, April 2018
- Jachalke, Sven; Schenk, Tony; Park, Min Hyuk
- Applied Physics Letters, Vol. 112, Issue 14
Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO 2 ) thin films
journal, September 2018
- Mart, C.; Czernohorsky, M.; Zybell, S.
- Applied Physics Letters, Vol. 113, Issue 12
Thermal resistance and heat capacity in hafnium zirconium oxide (Hf 1–x Zr x O 2 ) dielectrics and ferroelectric thin films
journal, November 2018
- Scott, Ethan A.; Smith, Sean W.; Henry, M. David
- Applied Physics Letters, Vol. 113, Issue 19
Stabilization of ferroelectric phase of Hf 0.58 Zr 0.42 O 2 on NbN at 4 K
journal, March 2019
- Henry, M. D.; Smith, S. W.; Lewis, R. M.
- Applied Physics Letters, Vol. 114, Issue 9
Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO 2 thin films
journal, March 2019
- Mart, C.; Kühnel, K.; Kämpfe, T.
- Applied Physics Letters, Vol. 114, Issue 10
Improvement in ferroelectricity of Hf x Zr 1−x O 2 thin films using top- and bottom-ZrO 2 nucleation layers
journal, June 2019
- Onaya, Takashi; Nabatame, Toshihide; Sawamoto, Naomi
- APL Materials, Vol. 7, Issue 6
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors
journal, October 2019
- Kim, Si Joon; Mohan, Jaidah; Kim, Harrison Sejoon
- Applied Physics Letters, Vol. 115, Issue 18
Enhanced pyroelectric properties of Bi 1−x La x FeO 3 thin films
journal, November 2019
- Zhang, Lei; Huang, Yen-Lin; Velarde, Gabriel
- APL Materials, Vol. 7, Issue 11
Fluorite-structure antiferroelectrics
journal, November 2019
- Park, Min Hyuk; Hwang, Cheol Seong
- Reports on Progress in Physics, Vol. 82, Issue 12
Origin of Pyroelectricity in Ferroelectric HfO 2
journal, September 2019
- Liu, J.; Liu, S.; Liu, L. H.
- Physical Review Applied, Vol. 12, Issue 3
Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications
journal, April 2019
- Peng, Yue; Han, Genquan; Xiao, Wenwu
- Nanoscale Research Letters, Vol. 14, Issue 1
Review and perspective on ferroelectric HfO2-based thin films for memory applications
journal, August 2018
- Park, Min Hyuk; Lee, Young Hwan; Mikolajick, Thomas
- MRS Communications, Vol. 8, Issue 03
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
journal, May 2018
- Mikolajick, Thomas; Slesazeck, Stefan; Park, Min Hyuk
- MRS Bulletin, Vol. 43, Issue 5