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Title: Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy

Abstract

Here, the mobilities of electrons and holes determine the applicability of any semiconductor, but their individual measurement remains a major challenge. Here, we show that time-resolved terahertz spectroscopy (TRTS) can distinguish the mobilities of minority and majority charge carriers independently of the doping-type and without electrical contacts. To this end, we combine the well-established determination of the sum of electron and hole mobilities from photo-induced THz absorption spectra with mobility-dependent ambipolar modeling of TRTS transients. The method is demonstrated on a polycrystalline Cu2ZnSnSe4 thin film and reveals a minority (electron) mobility of 128 cm2/V-s and a majority (hole) carrier mobility of 7 cm2/V-s in the vertical transport direction relevant for light emitting, photovoltaic and solar water splitting devices. Additionally, the TRTS analysis yields an effective bulk carrier lifetime of 4.4 ns, a surface recombination velocity of 6 * 104 cm/s and a doping concentration of ca. 1016 cm-3, thus offering the potential for contactless screen novel optoelectronic materials.

Authors:
 [1];  [1];  [1];  [2]; ORCiD logo [1]
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  1. Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Berlin (Germany)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1476709
Report Number(s):
NREL/JA-5K00-72460
Journal ID: ISSN 2045-2322
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; mobility; terahertz; spectroscopy; CZTS; kesterite

Citation Formats

Hempel, Hannes, Hages, Charles J., Eichberger, Rainer, Repins, Ingrid L., and Unold, Thomas. Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy. United States: N. p., 2018. Web. doi:10.1038/s41598-018-32695-6.
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Hempel, Hannes, Hages, Charles J., Eichberger, Rainer, Repins, Ingrid L., & Unold, Thomas. Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy. United States. https://doi.org/10.1038/s41598-018-32695-6
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Hempel, Hannes, Hages, Charles J., Eichberger, Rainer, Repins, Ingrid L., and Unold, Thomas. Thu . "Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy". United States. https://doi.org/10.1038/s41598-018-32695-6. https://www.osti.gov/servlets/purl/1476709.
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@article{osti_1476709,
title = {Minority and Majority Charge Carrier Mobility in Cu2ZnSnSe4 revealed by Terahertz Spectroscopy},
author = {Hempel, Hannes and Hages, Charles J. and Eichberger, Rainer and Repins, Ingrid L. and Unold, Thomas},
abstractNote = {Here, the mobilities of electrons and holes determine the applicability of any semiconductor, but their individual measurement remains a major challenge. Here, we show that time-resolved terahertz spectroscopy (TRTS) can distinguish the mobilities of minority and majority charge carriers independently of the doping-type and without electrical contacts. To this end, we combine the well-established determination of the sum of electron and hole mobilities from photo-induced THz absorption spectra with mobility-dependent ambipolar modeling of TRTS transients. The method is demonstrated on a polycrystalline Cu2ZnSnSe4 thin film and reveals a minority (electron) mobility of 128 cm2/V-s and a majority (hole) carrier mobility of 7 cm2/V-s in the vertical transport direction relevant for light emitting, photovoltaic and solar water splitting devices. Additionally, the TRTS analysis yields an effective bulk carrier lifetime of 4.4 ns, a surface recombination velocity of 6 * 104 cm/s and a doping concentration of ca. 1016 cm-3, thus offering the potential for contactless screen novel optoelectronic materials.},
doi = {10.1038/s41598-018-32695-6},
journal = {Scientific Reports},
number = 1,
volume = 8,
place = {United States},
year = {Thu Sep 27 00:00:00 EDT 2018},
month = {Thu Sep 27 00:00:00 EDT 2018}
}
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https://doi.org/10.1038/s41598-018-32695-6
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Works referenced in this record:

Accurate determination of minority carrier‐ and lattice scattering‐mobility in silicon from photoconductance decay
journal, November 1992

  • Sproul, A. B.; Green, M. A.; Stephens, A. W.
  • Journal of Applied Physics, Vol. 72, Issue 9
  • DOI: 10.1063/1.352225

An optical technique for measuring surface recombination velocity
journal, May 2009

Measurement of charge carrier mobilities in thin films on metal substrates by reflection time resolved terahertz spectroscopy
journal, January 2017

The ambipolar diffusion coefficient in silicon: Dependence on excess‐carrier concentration and temperature
journal, September 1994

  • Rosling, M.; Bleichner, H.; Jonsson, P.
  • Journal of Applied Physics, Vol. 76, Issue 5
  • DOI: 10.1063/1.358504

Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4
journal, January 2016

  • Hages, Charles J.; Carter, Nathaniel J.; Agrawal, Rakesh
  • Journal of Applied Physics, Vol. 119, Issue 1
  • DOI: 10.1063/1.4939487

Hall Coefficient and Impurity Band Mobility in Cd-Doped GaAs
journal, January 1969

Minority carrier diffusion length extraction in Cu 2 ZnSn(Se,S) 4 solar cells
journal, September 2013

  • Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B.
  • Journal of Applied Physics, Vol. 114, Issue 11
  • DOI: 10.1063/1.4821841

Pulsed laser deposition of quaternary Cu 2 ZnSnSe 4 thin films
journal, October 2007

  • Adhi Wibowo, Rachmat; Soo Lee, Eun; Munir, Badrul
  • physica status solidi (a), Vol. 204, Issue 10
  • DOI: 10.1002/pssa.200723144

Assessing Charge Carrier Trapping in Silicon Nanowires Using Picosecond Conductivity Measurements
journal, June 2012

  • Ulbricht, Ronald; Kurstjens, Rufi; Bonn, Mischa
  • Nano Letters, Vol. 12, Issue 7
  • DOI: 10.1021/nl3017835

Intragrain charge transport in kesterite thin films—Limits arising from carrier localization
journal, November 2016

  • Hempel, Hannes; Redinger, Alex; Repins, Ingrid
  • Journal of Applied Physics, Vol. 120, Issue 17
  • DOI: 10.1063/1.4965868

Propagation of terahertz pulses in photoexcited media: Analytical theory for layered systems
journal, July 2007

  • Kužel, P.; Kadlec, F.; Němec, H.
  • The Journal of Chemical Physics, Vol. 127, Issue 2
  • DOI: 10.1063/1.2748402

Identifying the Real Minority Carrier Lifetime in Nonideal Semiconductors: A Case Study of Kesterite Materials
journal, May 2017

  • Hages, Charles J.; Redinger, Alex; Levcenko, Sergiu
  • Advanced Energy Materials, Vol. 7, Issue 18
  • DOI: 10.1002/aenm.201700167

Dielectric function spectra and critical-point energies of Cu 2 ZnSnSe 4 from 0.5 to 9.0 eV
journal, February 2012

  • Choi, S. G.; Zhao, H. Y.; Persson, C.
  • Journal of Applied Physics, Vol. 111, Issue 3
  • DOI: 10.1063/1.3681814

A Review of the Terahertz Conductivity of Bulk and Nano-Materials
journal, May 2012

  • Lloyd-Hughes, James; Jeon, Tae-In
  • Journal of Infrared, Millimeter, and Terahertz Waves, Vol. 33, Issue 9
  • DOI: 10.1007/s10762-012-9905-y

Correlation between intrinsic defects and electrical properties in the high-quality Cu 2 ZnSnS 4 single crystal
journal, September 2013

  • Nagaoka, Akira; Miyake, Hideto; Taniyama, Tomoyasu
  • Applied Physics Letters, Vol. 103, Issue 11
  • DOI: 10.1063/1.4821279

Cathodoluminescence measurements of the minority‐carrier lifetime in semiconductors
journal, November 1977

  • Boulou, M.; Bois, D.
  • Journal of Applied Physics, Vol. 48, Issue 11
  • DOI: 10.1063/1.323537

Growth of Cu2ZnSnSe4 single crystals from Sn solutions
journal, September 2012

Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
journal, September 1994

  • Sproul, A. B.
  • Journal of Applied Physics, Vol. 76, Issue 5
  • DOI: 10.1063/1.357521

Classical generalization of the Drude formula for the optical conductivity
journal, September 2001

Time-resolved recombination analysis in kesterite polycrystalline thin films and photovoltaic devices with one-photon and two-photon excitation
journal, May 2015

The Transport of Added Current Carriers in a Homogeneous Semiconductor
journal, July 1953

Terahertz spectroscopy and imaging - Modern techniques and applications
journal, October 2010

  • Jepsen, P. U.; Cooke, D. G.; Koch, M.
  • Laser & Photonics Reviews, Vol. 5, Issue 1
  • DOI: 10.1002/lpor.201000011

Ultrabroadband terahertz conductivity of Si nanocrystal films
journal, November 2012

  • Cooke, D. G.; Meldrum, A.; Uhd Jepsen, P.
  • Applied Physics Letters, Vol. 101, Issue 21
  • DOI: 10.1063/1.4767145

Simulation of terahertz generation at semiconductor surfaces
journal, March 2002

Fabrication and performance limitations in single crystal Cu2ZnSnSe4 solar cells
conference, June 2016

  • Lloyd, Michael A.; Bishop, Douglas; Gunawan, Oki
  • 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
  • DOI: 10.1109/PVSC.2016.7750352

Charge transport in nanostructured materials for solar energy conversion studied by time-resolved terahertz spectroscopy
journal, September 2010

  • Němec, Hynek; Kužel, Petr; Sundström, Villy
  • Journal of Photochemistry and Photobiology A: Chemistry, Vol. 215, Issue 2-3
  • DOI: 10.1016/j.jphotochem.2010.08.006

Microscopic mobilities and cooling dynamics of photoexcited carriers in polycrystalline CuInSe 2
journal, March 2014

Photovoltaic Materials and Devices Based on the Alloyed Kesterite Absorber (AgxCu1-x)2 ZnSnSe4
journal, March 2016

  • Gershon, Talia; Lee, Yun Seog; Antunez, Priscilla
  • Advanced Energy Materials, Vol. 6, Issue 10, Article No. 1502468
  • DOI: 10.1002/aenm.201502468

Investigating subsurface damages in semiconductor-insulator-semiconductor solar cells with THz spectroscopy: THz emission from SIS solar cells
journal, December 2016

  • Blumröder, Ulrike; Hempel, Hannes; Füchsel, Kevin
  • physica status solidi (a), Vol. 214, Issue 5
  • DOI: 10.1002/pssa.201600590

Low surface recombination velocity in solution-grown CH3NH3PbBr3 perovskite single crystal
journal, August 2015

  • Yang, Ye; Yan, Yong; Yang, Mengjin
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8961

Improvements in electrical properties for the Sn-rich Cu2−xZnSnSe4 bulks with mobility above 50cm2/Vs
journal, November 2014

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    Works referencing / citing this record:

    Influence of Germanium Content on the Properties of Cu 2 Zn(SnGe)Se 4 Thin Films Deposited by Sequential Thermal Evaporation Technique Studied by Photoacoustic Technique
    journal, July 2019

    • Vigil-Galán, Osvaldo; González-Castillo, Jesús Roberto; Macias, Marcos
    • physica status solidi (a), Vol. 216, Issue 18
    • DOI: 10.1002/pssa.201900260

    The electrical and optical properties of kesterites
    journal, August 2019

    • Grossberg, Maarja; Krustok, Jüri; Hages, Charles J.
    • Journal of Physics: Energy, Vol. 1, Issue 4
    • DOI: 10.1088/2515-7655/ab29a0
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