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Title: Majority Carrier Properties of Single Crystal Cu 2− x ZnSnSe 4 with Varying Copper Composition

Authors:
ORCiD logo [1];  [2];  [1]
  1. Institute of Energy ConversionUniversity of Delaware451 Wyoming RoadNewarkDE19716USA
  2. IBM TJ Watson Research Center1101 Kitchawan RdYorktown HeightsNY10598USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1542679
Grant/Contract Number:  
DE‐EE0006334
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physica Status Solidi B. Basic Solid State Physics
Additional Journal Information:
Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Volume: 256 Journal Issue: 11; Journal ID: ISSN 0370-1972
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

McCandless, Brian E., Bishop, Doug, and Lloyd, Michael. Majority Carrier Properties of Single Crystal Cu 2− x ZnSnSe 4 with Varying Copper Composition. Germany: N. p., 2019. Web. doi:10.1002/pssb.201900180.
McCandless, Brian E., Bishop, Doug, & Lloyd, Michael. Majority Carrier Properties of Single Crystal Cu 2− x ZnSnSe 4 with Varying Copper Composition. Germany. doi:10.1002/pssb.201900180.
McCandless, Brian E., Bishop, Doug, and Lloyd, Michael. Sun . "Majority Carrier Properties of Single Crystal Cu 2− x ZnSnSe 4 with Varying Copper Composition". Germany. doi:10.1002/pssb.201900180.
@article{osti_1542679,
title = {Majority Carrier Properties of Single Crystal Cu 2− x ZnSnSe 4 with Varying Copper Composition},
author = {McCandless, Brian E. and Bishop, Doug and Lloyd, Michael},
abstractNote = {},
doi = {10.1002/pssb.201900180},
journal = {Physica Status Solidi B. Basic Solid State Physics},
number = 11,
volume = 256,
place = {Germany},
year = {2019},
month = {7}
}

Journal Article:
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This content will become publicly available on July 15, 2020
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Works referenced in this record:

Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4
journal, March 2010


Temperature dependent electrical characterization of thin film Cu 2 ZnSnSe 4 solar cells
journal, January 2016


The crystal structure of kesterite type compounds: A neutron and X-ray diffraction study
journal, June 2011


Luminescence of Cu 2 ZnSnS 4 polycrystals described by the fluctuating potential model
journal, June 2013

  • Halliday, D. P.; Claridge, R.; Goodman, M. C. J.
  • Journal of Applied Physics, Vol. 113, Issue 22
  • DOI: 10.1063/1.4810846

Modification of defects and potential fluctuations in slow-cooled and quenched Cu 2 ZnSnSe 4 single crystals
journal, February 2017

  • Bishop, Douglas M.; McCandless, Brian; Gershon, Talia
  • Journal of Applied Physics, Vol. 121, Issue 6
  • DOI: 10.1063/1.4975483

Classification of Lattice Defects in the Kesterite Cu 2 ZnSnS 4 and Cu 2 ZnSnSe 4 Earth-Abundant Solar Cell Absorbers
journal, February 2013


Correlation between intrinsic defects and electrical properties in the high-quality Cu 2 ZnSnS 4 single crystal
journal, September 2013

  • Nagaoka, Akira; Miyake, Hideto; Taniyama, Tomoyasu
  • Applied Physics Letters, Vol. 103, Issue 11
  • DOI: 10.1063/1.4821279

Growth of Cu2ZnSnSe4 single crystals from Sn solutions
journal, September 2012