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Title: Computational study of Fermi kinetics transport applied to large-signal RF device simulations

Abstract

Here, a detailed description and analysis of the Fermi kinetics transport (FKT) equations for simulating charge transport in semiconductor devices is presented. The fully coupled nonlinear discrete FKT equations are elaborated, as well as solution methods and work-flow for the simulation of RF electronic devices under large-signal conditions. The importance of full-wave electromagnetics is discussed in the context of high-speed device simulation, and the meshing requirements to integrate the full-wave solver with the transport equations are given in detail. The method includes full semiconductor band structure effects to capture the scattering details for the Boltzmann transport equation. The method is applied to high-speed gallium nitride devices. Finally, numerical convergence and stability examples provide insight into the mesh convergence behavior of the deterministic solver.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5]
  1. Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical and Computer Engineering; Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
  2. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Tech-X Corp., Boulder, CO (United States)
  5. Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical and Computer Engineering
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1472250
Report Number(s):
SAND-2018-9525J
Journal ID: ISSN 1569-8025; 667464
Grant/Contract Number:  
AC04-94AL85000; FA9550-17RYCOR495; FA8650-16-C-1764; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Computational Electronics
Additional Journal Information:
Journal Volume: 17; Journal Issue: 4; Journal ID: ISSN 1569-8025
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; FKT; Deterministic Boltzmann solver; Electronic device simulations; GaN high electron mobility transistor technology

Citation Formats

Miller, Nicholas C., Grupen, Matt, Beckwith, Kris, Smithe, David, and Albrecht, John D. Computational study of Fermi kinetics transport applied to large-signal RF device simulations. United States: N. p., 2018. Web. doi:10.1007/s10825-018-1242-5.
Miller, Nicholas C., Grupen, Matt, Beckwith, Kris, Smithe, David, & Albrecht, John D. Computational study of Fermi kinetics transport applied to large-signal RF device simulations. United States. doi:10.1007/s10825-018-1242-5.
Miller, Nicholas C., Grupen, Matt, Beckwith, Kris, Smithe, David, and Albrecht, John D. Sat . "Computational study of Fermi kinetics transport applied to large-signal RF device simulations". United States. doi:10.1007/s10825-018-1242-5. https://www.osti.gov/servlets/purl/1472250.
@article{osti_1472250,
title = {Computational study of Fermi kinetics transport applied to large-signal RF device simulations},
author = {Miller, Nicholas C. and Grupen, Matt and Beckwith, Kris and Smithe, David and Albrecht, John D.},
abstractNote = {Here, a detailed description and analysis of the Fermi kinetics transport (FKT) equations for simulating charge transport in semiconductor devices is presented. The fully coupled nonlinear discrete FKT equations are elaborated, as well as solution methods and work-flow for the simulation of RF electronic devices under large-signal conditions. The importance of full-wave electromagnetics is discussed in the context of high-speed device simulation, and the meshing requirements to integrate the full-wave solver with the transport equations are given in detail. The method includes full semiconductor band structure effects to capture the scattering details for the Boltzmann transport equation. The method is applied to high-speed gallium nitride devices. Finally, numerical convergence and stability examples provide insight into the mesh convergence behavior of the deterministic solver.},
doi = {10.1007/s10825-018-1242-5},
journal = {Journal of Computational Electronics},
number = 4,
volume = 17,
place = {United States},
year = {2018},
month = {9}
}

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