Computational study of Fermi kinetics transport applied to large-signal RF device simulations

Miller, Nicholas C.; Grupen, Matt; Beckwith, Kris; Smithe, David; Albrecht, John D.

doi:10.1007/s10825-018-1242-5

Title: Computational study of Fermi kinetics transport applied to large-signal RF device simulations

Abstract

Here, a detailed description and analysis of the Fermi kinetics transport (FKT) equations for simulating charge transport in semiconductor devices is presented. The fully coupled nonlinear discrete FKT equations are elaborated, as well as solution methods and work-flow for the simulation of RF electronic devices under large-signal conditions. The importance of full-wave electromagnetics is discussed in the context of high-speed device simulation, and the meshing requirements to integrate the full-wave solver with the transport equations are given in detail. The method includes full semiconductor band structure effects to capture the scattering details for the Boltzmann transport equation. The method is applied to high-speed gallium nitride devices. Finally, numerical convergence and stability examples provide insight into the mesh convergence behavior of the deterministic solver.

Authors:

^[1]; Grupen, Matt ^[2]; Beckwith, Kris ^[3]; Smithe, David ^[4]; Albrecht, John D. ^[5]

Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical and Computer Engineering; Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Tech-X Corp., Boulder, CO (United States)
Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical and Computer Engineering

Publication Date:: Sat Sep 08 00:00:00 EDT 2018

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR)

OSTI Identifier:: 1472250

Report Number(s):: SAND-2018-9525J
Journal ID: ISSN 1569-8025; 667464

Grant/Contract Number:: AC04-94AL85000; FA9550-17RYCOR495; FA8650-16-C-1764; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Computational Electronics

Additional Journal Information:: Journal Volume: 17; Journal Issue: 4; Journal ID: ISSN 1569-8025

Publisher:: Springer

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; FKT; Deterministic Boltzmann solver; Electronic device simulations; GaN high electron mobility transistor technology

Citation Formats


                    Miller, Nicholas C., Grupen, Matt, Beckwith, Kris, Smithe, David, and Albrecht, John D. Computational study of Fermi kinetics transport applied to large-signal RF device simulations.  United States: N. p., 2018. 
Web.  doi:10.1007/s10825-018-1242-5.

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                    Miller, Nicholas C., Grupen, Matt, Beckwith, Kris, Smithe, David, & Albrecht, John D. Computational study of Fermi kinetics transport applied to large-signal RF device simulations.  United States.  https://doi.org/10.1007/s10825-018-1242-5

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                    Miller, Nicholas C., Grupen, Matt, Beckwith, Kris, Smithe, David, and Albrecht, John D. Sat .  
"Computational study of Fermi kinetics transport applied to large-signal RF device simulations".  United States.  https://doi.org/10.1007/s10825-018-1242-5.  https://www.osti.gov/servlets/purl/1472250.

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@article{osti_1472250,

  title        = {Computational study of Fermi kinetics transport applied to large-signal RF device simulations},

  author       = {Miller, Nicholas C. and Grupen, Matt and Beckwith, Kris and Smithe, David and Albrecht, John D.},

  abstractNote = {Here, a detailed description and analysis of the Fermi kinetics transport (FKT) equations for simulating charge transport in semiconductor devices is presented. The fully coupled nonlinear discrete FKT equations are elaborated, as well as solution methods and work-flow for the simulation of RF electronic devices under large-signal conditions. The importance of full-wave electromagnetics is discussed in the context of high-speed device simulation, and the meshing requirements to integrate the full-wave solver with the transport equations are given in detail. The method includes full semiconductor band structure effects to capture the scattering details for the Boltzmann transport equation. The method is applied to high-speed gallium nitride devices. Finally, numerical convergence and stability examples provide insight into the mesh convergence behavior of the deterministic solver.},

  doi          = {10.1007/s10825-018-1242-5},

  journal      = {Journal of Computational Electronics},

  number       = 4,

  volume       = 17,

  place        = {United States},

  year         = {Sat Sep 08 00:00:00 EDT 2018},

  month        = {Sat Sep 08 00:00:00 EDT 2018}

}

Copy to clipboard

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https://doi.org/10.1007/s10825-018-1242-5

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Title: Computational study of Fermi kinetics transport applied to large-signal RF device simulations

Abstract

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The Monte Carlo Method journal, September 1949

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Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN journal, November 2011

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Multiphysics simulation of high-frequency carrier dynamics in conductive materials
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Modeling and Simulation of Terahertz Devices
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Qualitative Behavior of Solutions of a Degenerate Nonlinear Drift-Diffusion Model for Semiconductors
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Energy transport model with full band structure for GaAs electronic devices
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Mixed element trees: a generalization of modified octrees for the generation of meshes for the simulation of complex 3-D semiconductor device structures
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Diffusion of Hot and Cold Electrons in Semiconductor Barriers
journal, June 1962

Full-wave hydrodynamic model for predicting THz emission from grating-gate RTD-gated plasma wave HEMTs
conference, June 2015

Constrained Delaunay triangulations
conference, January 1987

Tailoring unstructured meshes for use with a 3D time domain co-volume algorithm for computational electromagnetics
journal, July 2010

Cell polarisation in a bulk-surface model can be driven by both classic and non-classic Turing instability
journal, February 2021

The Monte Carlo method
journal, February 1977

Interplay of Lorentz-Berry forces in position-momentum spaces for valley-dependent impurity scattering in $α - T_{3}$ lattices
journal, June 2019