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Title: Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe

Abstract

Two-dimensional monochalcogenides (MX) have been identified as a unique and promising class of layered materials in recent years. The valence band of single-layer MX, as predicted by theory, is inverted into a bow-shaped (often referred to as an inverted sombrero) and relatively flat dispersion, which is expected to give rise to strongly correlated effects. The inversion leads to an indirect band gap, which is consistent with photoluminescence (PL) experiments, but PL provides no direct evidence of the band inversion in the valence band. Here we demonstrate for a hexagonal MX crystal, gallium selenide (GaSe), using a combination of angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), that the valence band of monolayer (ML) GaSe exhibits a robust inversion of the valence dispersion at the Γ point forming a bow-shaped dispersion with a depth of 120 ± 10 meV between the double valence band maximum along the ΓK direction. We also demonstrate that the deeper-lying bands detected in the ARPES spectrum are consistent with DFT calculations only if spin-orbit coupling is considered. The presented ARPES evidence that spin-orbit coupling leads to the splitting of two fourfold-degenerate states into four Kramers doublets is of significance for PL measurements, as the changemore » in energy of the second highest valence state at the Γ point has a measurable effect on the PL energies in high-energy luminescence. Here, e predict the optical absorption coefficients for the principal transitions in ML GaSe using a four-band k∙p model parametrized from first-principles theory with spin-orbit effects considered.« less

Authors:
 [1];  [2];  [1];  [3];  [4];  [4];  [2];  [1];  [4]; ORCiD logo [5]; ORCiD logo [6];  [4];  [4];  [7];  [7];  [2];  [1]
  1. Centre de Nanosciences et de Nanotechnologies, Marcoussis, (France); Centre National de la Recherche Scientifique (CNRS), Paris (France); Univ. Paris-Saclay, Gif-sur-Yvette (France); Univ. Paris-Sud, Orsay (France)
  2. Univ. of Manchester (United Kingdom). National Graphene Inst.
  3. CELLS-ALBA Synchrotron Radiation Facility, Barcelona (Spain)
  4. Synchrotron SOLEIL, Saint-Aubin (France); Univ. Paris-Saclay, Gif-sur-Yvette (France)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Univ. of Tennessee, Knoxville, TN (United States)
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  7. Sorbonne Universités, Paris (France). Inst. des NanoSciences de Paris (INSP)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1494886
Alternate Identifier(s):
OSTI ID: 1468859
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 11; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Ben Aziza, Zeineb, Zólyomi, Viktor, Henck, Hugo, Pierucci, Debora, Silly, Mathieu G., Avila, José, Magorrian, Samuel J., Chaste, Julien, Chen, Chaoyu, Yoon, Mina, Xiao, Kai, Sirotti, Fausto, Asensio, Maria C., Lhuillier, Emmanuel, Eddrief, Mahmoud, Fal'ko, Vladimir I., and Ouerghi, Abdelkarim. Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.98.115405.
Ben Aziza, Zeineb, Zólyomi, Viktor, Henck, Hugo, Pierucci, Debora, Silly, Mathieu G., Avila, José, Magorrian, Samuel J., Chaste, Julien, Chen, Chaoyu, Yoon, Mina, Xiao, Kai, Sirotti, Fausto, Asensio, Maria C., Lhuillier, Emmanuel, Eddrief, Mahmoud, Fal'ko, Vladimir I., & Ouerghi, Abdelkarim. Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe. United States. https://doi.org/10.1103/PhysRevB.98.115405
Ben Aziza, Zeineb, Zólyomi, Viktor, Henck, Hugo, Pierucci, Debora, Silly, Mathieu G., Avila, José, Magorrian, Samuel J., Chaste, Julien, Chen, Chaoyu, Yoon, Mina, Xiao, Kai, Sirotti, Fausto, Asensio, Maria C., Lhuillier, Emmanuel, Eddrief, Mahmoud, Fal'ko, Vladimir I., and Ouerghi, Abdelkarim. Tue . "Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe". United States. https://doi.org/10.1103/PhysRevB.98.115405. https://www.osti.gov/servlets/purl/1494886.
@article{osti_1494886,
title = {Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe},
author = {Ben Aziza, Zeineb and Zólyomi, Viktor and Henck, Hugo and Pierucci, Debora and Silly, Mathieu G. and Avila, José and Magorrian, Samuel J. and Chaste, Julien and Chen, Chaoyu and Yoon, Mina and Xiao, Kai and Sirotti, Fausto and Asensio, Maria C. and Lhuillier, Emmanuel and Eddrief, Mahmoud and Fal'ko, Vladimir I. and Ouerghi, Abdelkarim},
abstractNote = {Two-dimensional monochalcogenides (MX) have been identified as a unique and promising class of layered materials in recent years. The valence band of single-layer MX, as predicted by theory, is inverted into a bow-shaped (often referred to as an inverted sombrero) and relatively flat dispersion, which is expected to give rise to strongly correlated effects. The inversion leads to an indirect band gap, which is consistent with photoluminescence (PL) experiments, but PL provides no direct evidence of the band inversion in the valence band. Here we demonstrate for a hexagonal MX crystal, gallium selenide (GaSe), using a combination of angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), that the valence band of monolayer (ML) GaSe exhibits a robust inversion of the valence dispersion at the Γ point forming a bow-shaped dispersion with a depth of 120 ± 10 meV between the double valence band maximum along the ΓK direction. We also demonstrate that the deeper-lying bands detected in the ARPES spectrum are consistent with DFT calculations only if spin-orbit coupling is considered. The presented ARPES evidence that spin-orbit coupling leads to the splitting of two fourfold-degenerate states into four Kramers doublets is of significance for PL measurements, as the change in energy of the second highest valence state at the Γ point has a measurable effect on the PL energies in high-energy luminescence. Here, e predict the optical absorption coefficients for the principal transitions in ML GaSe using a four-band k∙p model parametrized from first-principles theory with spin-orbit effects considered.},
doi = {10.1103/PhysRevB.98.115405},
journal = {Physical Review B},
number = 11,
volume = 98,
place = {United States},
year = {Tue Sep 04 00:00:00 EDT 2018},
month = {Tue Sep 04 00:00:00 EDT 2018}
}

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Works referenced in this record:

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
journal, June 2012

  • Hu, PingAn; Wen, Zhenzhong; Wang, Lifeng
  • ACS Nano, Vol. 6, Issue 7
  • DOI: 10.1021/nn300889c

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Electron states of mono- and bilayer graphene on SiC probed by scanning-tunneling microscopy
journal, July 2007


Tunable Magnetism and Half-Metallicity in Hole-Doped Monolayer GaSe
journal, June 2015


Scanning tunneling spectroscopy of van der Waals graphene/semiconductor interfaces: absence of Fermi level pinning
journal, July 2017


High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
journal, April 2014

  • Tamalampudi, Srinivasa Reddy; Lu, Yi-Ying; Kumar U., Rajesh
  • Nano Letters, Vol. 14, Issue 5
  • DOI: 10.1021/nl500817g

Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures
journal, July 2017


High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
journal, May 2015

  • Mudd, Garry W.; Svatek, Simon A.; Hague, Lee
  • Advanced Materials, Vol. 27, Issue 25
  • DOI: 10.1002/adma.201500889

Single crystalline GaSe/WSe 2 heterointerfaces grown by van der Waals epitaxy. II. Junction characterization
journal, June 1994

  • Lang, O.; Tomm, Y.; Schlaf, R.
  • Journal of Applied Physics, Vol. 75, Issue 12
  • DOI: 10.1063/1.356563

Band Alignment and Minigaps in Monolayer MoS 2 -Graphene van der Waals Heterostructures
journal, June 2016


Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
journal, May 2013


van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties
journal, October 2016


Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
journal, June 2014

  • Li, Xufan; Lin, Ming-Wei; Puretzky, Alexander A.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05497

High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes
journal, December 2013

  • Liu, Fucai; Shimotani, Hidekazu; Shang, Hui
  • ACS Nano, Vol. 8, Issue 1
  • DOI: 10.1021/nn4054039

Fast, multicolor photodetection with graphene-contacted p -GaSe/ n -InSe van der Waals heterostructures
journal, June 2017


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Recent Advances in Two-Dimensional Materials beyond Graphene
journal, October 2015


Electrolytic phototransistor based on graphene-MoS 2 van der Waals p-n heterojunction with tunable photoresponse
journal, September 2016

  • Henck, Hugo; Pierucci, Debora; Chaste, Julien
  • Applied Physics Letters, Vol. 109, Issue 11
  • DOI: 10.1063/1.4962551

Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals p-n junction
journal, December 2016


Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model
journal, December 2016


Quantum confined acceptors and donors in InSe nanosheets
journal, December 2014

  • Mudd, G. W.; Patanè, A.; Kudrynskyi, Z. R.
  • Applied Physics Letters, Vol. 105, Issue 22
  • DOI: 10.1063/1.4903738

Highly-mismatched InAs/InSe heterojunction diodes
journal, October 2016

  • Velichko, A. V.; Kudrynskyi, Z. R.; Di Paola, D. M.
  • Applied Physics Letters, Vol. 109, Issue 18
  • DOI: 10.1063/1.4967381

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures
journal, June 2016

  • Pierucci, Debora; Henck, Hugo; Naylor, Carl H.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep26656

2D materials and van der Waals heterostructures
journal, July 2016


Tunable Photoluminescence of Monolayer MoS 2 via Chemical Doping
journal, November 2013

  • Mouri, Shinichiro; Miyauchi, Yuhei; Matsuda, Kazunari
  • Nano Letters, Vol. 13, Issue 12
  • DOI: 10.1021/nl403036h

Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides
journal, May 2013


Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
journal, June 2012


Graphene/GaSe-Nanosheet Hybrid: Towards High Gain and Fast Photoresponse
journal, January 2016

  • Lu, Rongtao; Liu, Jianwei; Luo, Hongfu
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep19161

Charge transfer between epitaxial graphene and silicon carbide
journal, September 2010

  • Kopylov, Sergey; Tzalenchuk, Alexander; Kubatkin, Sergey
  • Applied Physics Letters, Vol. 97, Issue 11
  • DOI: 10.1063/1.3487782

Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013

  • Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
  • Nano Letters, Vol. 13, Issue 8, p. 3626-3630
  • DOI: 10.1021/nl4014748

Modelling of stacked 2D materials and devices
journal, August 2015


Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole
journal, November 2016


Effective nonlinear GaSe crystal. Optical properties and applications
journal, May 2009


Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
journal, June 2012

  • Pallecchi, E.; Ridene, M.; Kazazis, D.
  • Applied Physics Letters, Vol. 100, Issue 25
  • DOI: 10.1063/1.4729824

Van der Waals epitaxy for highly lattice-mismatched systems
journal, May 1999


High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
journal, November 2016

  • Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.
  • Nature Nanotechnology, Vol. 12, Issue 3
  • DOI: 10.1038/nnano.2016.242

Spin-orbit coupling, optical transitions, and spin pumping in monolayer and few-layer InSe
journal, November 2017


Works referencing / citing this record:

Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors
journal, January 2020

  • Zappia, Marilena Isabella; Bianca, Gabriele; Bellani, Sebastiano
  • Advanced Functional Materials, Vol. 30, Issue 10
  • DOI: 10.1002/adfm.201909572

Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field
journal, January 2018

  • Le, P. T. T.; Hieu, Nguyen N.; Bui, Le M.
  • Physical Chemistry Chemical Physics, Vol. 20, Issue 44
  • DOI: 10.1039/c8cp05588b

Comprehensive understanding of intrinsic mobility in the monolayers of III–VI group 2D materials
journal, January 2019

  • Chen, Jianhui; Tan, Xiaolin; Lin, Peng
  • Physical Chemistry Chemical Physics, Vol. 21, Issue 39
  • DOI: 10.1039/c9cp04407h

Synthesis and emerging properties of 2D layered III–VI metal chalcogenides
journal, December 2019

  • Cai, Hui; Gu, Yiyi; Lin, Yu-Chuan
  • Applied Physics Reviews, Vol. 6, Issue 4
  • DOI: 10.1063/1.5123487

Investigation of atomic and electronic properties of 2D-MoS 2 /3D-GaN mixed-dimensional heterostructures
journal, July 2019


Tunable electronic structure in gallium chalcogenide van der Waals compounds
journal, October 2019


Electronic coupling in the F4-TCNQ/single-layer GaSe heterostructure
journal, August 2019