Tuning the band topology of GdSb by epitaxial strain

Inbar, Hadass S.; Ho, Dai Q.; Chatterjee, Shouvik; Engel, Aaron N.; Khalid, Shoaib; Dempsey, Connor P.; Pendharkar, Mihir; Chang, Yu Hao; Nishihaya, Shinichi; Fedorov, Alexei V.; Lu, Donghui; Hashimoto, Makoto; Read, Dan; Janotti, Anderson; Palmstrøm, Christopher J.

doi:10.1063/5.0155218

Title: Tuning the band topology of GdSb by epitaxial strain

Journal Article · 02 November 2023 · APL Materials

DOI: https://doi.org/10.1063/5.0155218 · OSTI ID:2282132

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Univ. of California, Santa Barbara, CA (United States)
Univ. of Delaware, Newark, DE (United States); Quy Nhon University (Vietnam)
Univ. of California, Santa Barbara, CA (United States); Tata Institute of Fundamental Research (India)
National University of Science and Technology (Pakistan); Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)
Univ. of California, Santa Barbara, CA (United States); Stanford Univ., CA (United States)
Univ. of California, Santa Barbara, CA (United States); Tokyo Institute of Technology (Japan)
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Univ. of California, Santa Barbara, CA (United States); Cardiff Univ., Wales (United Kingdom)
Univ. of Delaware, Newark, DE (United States)

Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb(001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). As biaxial strain is tuned from tensile to compressive strain, the gap between the hole and the electron bands dispersed along [001] decreases. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature.

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Research Organization:: Princeton Plasma Physics Laboratory (PPPL), Princeton, NJ (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0014388; AC02-05CH11231; AC02-76SF00515

OSTI ID:: 2282132

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 11 Vol. 11; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
Density functional theory
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Tight-binding model
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Epitaxy
Angle-resolved photoemission spectroscopy
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Title: Tuning the band topology of GdSb by epitaxial strain

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