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Title: Silicon compatible Sn-based resistive switching memory

Abstract

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO2 or Al2O3)/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO2, we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (Vstress) as well as the initial leakage current (I0) through themore » device.« less

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [4];  [2];  [4];  [1]
+ Show Author Affiliations
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  3. New Mexico Inst. of Mining and Technology, Socorro, NM (United States). Chemical Engineering and Materials Engineering Dept.
  4. Univ. of Notre Dame, IN (United States). Dept. of Electrical Engineering
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Semiconductor Research Corporation (SRC) (United States)
OSTI Identifier:
1461456
Alternate Identifier(s):
OSTI ID: 1434172
Grant/Contract Number:  
AC02-06CH11357; 1640081
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 20; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, and Guha, Supratik. Silicon compatible Sn-based resistive switching memory. United States: N. p., 2018. Web. doi:10.1039/c8nr01540f.
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Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, & Guha, Supratik. Silicon compatible Sn-based resistive switching memory. United States. https://doi.org/10.1039/c8nr01540f
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Sonde, Sushant, Chakrabarti, Bhaswar, Liu, Yuzi, Sasikumar, Kiran, Lin, Jianqiang, Stan, Liliana, Divan, Ralu, Ocola, Leonidas E., Rosenmann, Daniel, Choudhury, Pabitra, Ni, Kai, Sankaranarayanan, Subramanian K. R. S., Datta, Suman, and Guha, Supratik. Tue . "Silicon compatible Sn-based resistive switching memory". United States. https://doi.org/10.1039/c8nr01540f. https://www.osti.gov/servlets/purl/1461456.
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@article{osti_1461456,
title = {Silicon compatible Sn-based resistive switching memory},
author = {Sonde, Sushant and Chakrabarti, Bhaswar and Liu, Yuzi and Sasikumar, Kiran and Lin, Jianqiang and Stan, Liliana and Divan, Ralu and Ocola, Leonidas E. and Rosenmann, Daniel and Choudhury, Pabitra and Ni, Kai and Sankaranarayanan, Subramanian K. R. S. and Datta, Suman and Guha, Supratik},
abstractNote = {Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO2 or Al2O3)/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO2, we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (Vstress) as well as the initial leakage current (I0) through the device.},
doi = {10.1039/c8nr01540f},
journal = {Nanoscale},
number = 20,
volume = 10,
place = {United States},
year = {Tue Apr 17 00:00:00 EDT 2018},
month = {Tue Apr 17 00:00:00 EDT 2018}
}
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