Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons
Abstract
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum ION/IOFF current ratio of 87.5.
- Authors:
-
[3];
[4];
[3];
[5]
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Strasse 25, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 2, Aachen, Germany
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, Köln, Germany
- Department of Chemistry, University of California Berkeley, Berkeley, California 94720, United States
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Strasse 25, Aachen, Germany, Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 2, Aachen, Germany
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Rheinisch Westfalische Technische Hochschule Aachen (RWTH) Aachen Univ., Aachen (Germany)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1430749
- Alternate Identifier(s):
- OSTI ID: 1461136; OSTI ID: 1508758
- Grant/Contract Number:
- SC0010409; AC02-05CH11231; 648589; NW-1-1-036b
- Resource Type:
- Published Article
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Name: ACS Applied Materials and Interfaces Journal Volume: 10 Journal Issue: 12; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 7-AGNRs; back-gated field-effect transistors; bandgap; graphene nanoribbons; mobility
Citation Formats
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Grüneis, Alexander, and Lemme, Max C. Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons. United States: N. p., 2018.
Web. doi:10.1021/acsami.8b01116.
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Grüneis, Alexander, & Lemme, Max C. Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons. United States. https://doi.org/10.1021/acsami.8b01116
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Grüneis, Alexander, and Lemme, Max C. Thu .
"Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons". United States. https://doi.org/10.1021/acsami.8b01116.
@article{osti_1430749,
title = {Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons},
author = {Passi, Vikram and Gahoi, Amit and Senkovskiy, Boris V. and Haberer, Danny and Fischer, Felix R. and Grüneis, Alexander and Lemme, Max C.},
abstractNote = {We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum ION/IOFF current ratio of 87.5.},
doi = {10.1021/acsami.8b01116},
journal = {ACS Applied Materials and Interfaces},
number = 12,
volume = 10,
place = {United States},
year = {Thu Mar 08 00:00:00 EST 2018},
month = {Thu Mar 08 00:00:00 EST 2018}
}
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https://doi.org/10.1021/acsami.8b01116
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