Lifetime laser damage performance of β-Ga2O3 for high power applications
Abstract
Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, by using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.
- Authors:
-
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). National Ignition Facility (NIF), Physical and Life Sciences and Photon Sciences
- The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering; Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Electrical Engineering and Computer Science
- The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering and Dept. of Materials Science and Engineering; Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Electrical Engineering and Computer Science
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). National Ignition Facility (NIF), Materials Engineering Division and Photon Sciences
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; National Science Foundation (NSF)
- OSTI Identifier:
- 1458626
- Alternate Identifier(s):
- OSTI ID: 1427319
- Report Number(s):
- LLNL-JRNL-741078
Journal ID: ISSN 2166-532X; 894761
- Grant/Contract Number:
- AC52-07NA27344; DMR-1755479; 15-ERD-057
- Resource Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 3; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; 36 MATERIALS SCIENCE; power electronics; laser applications; semiconductors; photoluminescence; thin films; epitaxy; chemical compounds; raman spectroscopy
Citation Formats
Yoo, Jae-Hyuck, Rafique, Subrina, Lange, Andrew, Zhao, Hongping, and Elhadj, Selim. Lifetime laser damage performance of β-Ga2O3 for high power applications. United States: N. p., 2018.
Web. doi:10.1063/1.5021603.
Yoo, Jae-Hyuck, Rafique, Subrina, Lange, Andrew, Zhao, Hongping, & Elhadj, Selim. Lifetime laser damage performance of β-Ga2O3 for high power applications. United States. https://doi.org/10.1063/1.5021603
Yoo, Jae-Hyuck, Rafique, Subrina, Lange, Andrew, Zhao, Hongping, and Elhadj, Selim. Tue .
"Lifetime laser damage performance of β-Ga2O3 for high power applications". United States. https://doi.org/10.1063/1.5021603. https://www.osti.gov/servlets/purl/1458626.
@article{osti_1458626,
title = {Lifetime laser damage performance of β-Ga2O3 for high power applications},
author = {Yoo, Jae-Hyuck and Rafique, Subrina and Lange, Andrew and Zhao, Hongping and Elhadj, Selim},
abstractNote = {Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, by using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.},
doi = {10.1063/1.5021603},
journal = {APL Materials},
number = 3,
volume = 6,
place = {United States},
year = {Tue Mar 20 00:00:00 EDT 2018},
month = {Tue Mar 20 00:00:00 EDT 2018}
}
Web of Science
Works referenced in this record:
Semiconductors for high‐voltage, vertical channel field‐effect transistors
journal, March 1982
- Baliga, B. J.
- Journal of Applied Physics, Vol. 53, Issue 3, p. 1759-1764
Laser-induced electric breakdown in solids
journal, March 1974
- Bloembergen, N.
- IEEE Journal of Quantum Electronics, Vol. 10, Issue 3
Prospects of III-nitride optoelectronics grown on Si
journal, October 2013
- Zhu, D.; Wallis, D. J.; Humphreys, C. J.
- Reports on Progress in Physics, Vol. 76, Issue 10
150-ps broadband low dispersion mirror thin film damage competition
conference, November 2015
- Stolz, Christopher J.; Negres, Raluca A.; Kafka, Kyle
- SPIE Laser Damage, SPIE Proceedings
Spectroscopic ellipsometry studies on β-Ga 2 O 3 films and single crystal
journal, September 2016
- Onuma, Takeyoshi; Saito, Shingo; Sasaki, Kohei
- Japanese Journal of Applied Physics, Vol. 55, Issue 12
Growth defects in GaN films on 6H–SiC substrates
journal, May 1996
- Chien, F. R.; Ning, X. J.; Stemmer, S.
- Applied Physics Letters, Vol. 68, Issue 19
Ultrashort-laser-pulse damage threshold of transparent materials and the role of incubation
journal, December 1999
- Rosenfeld, A.; Lorenz, M.; Stoian, R.
- Applied Physics A: Materials Science & Processing, Vol. 69, Issue 7
Recent progress in Ga 2 O 3 power devices
journal, January 2016
- Higashiwaki, Masataka; Sasaki, Kohei; Murakami, Hisashi
- Semiconductor Science and Technology, Vol. 31, Issue 3
Thermally ruggedized ITO transparent electrode films for high power optoelectronics
journal, January 2017
- Yoo, Jae-Hyuck; Matthews, Manyalibo; Ramsey, Phil
- Optics Express, Vol. 25, Issue 21
Theory of laser-induced free-electron heating and impact ionization in wide-band-gap solids
journal, December 1992
- Arnold, D.; Cartier, E.
- Physical Review B, Vol. 46, Issue 23
Synthesis of wide bandgap Ga 2 O 3 ( E g ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition : Synthesis of wide bandgap Ga
journal, November 2015
- Rafique, Subrina; Han, Lu; Zhao, Hongping
- physica status solidi (a), Vol. 213, Issue 4
40-fs broadband low dispersion mirror thin film damage competition
conference, December 2016
- Negres, Raluca A.; Stolz, Christopher J.; Kafka, Kyle R. P.
- SPIE Laser Damage, SPIE Proceedings
High-pressure study of the -to- transition in
journal, March 2006
- Machon, Denis; McMillan, Paul F.; Xu, Bin
- Physical Review B, Vol. 73, Issue 9
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN
journal, December 2014
- Reshchikov, M. A.; Demchenko, D. O.; Usikov, A.
- Physical Review B, Vol. 90, Issue 23
Optical and electrical properties of indium tin oxide films near their laser damage threshold
journal, January 2017
- Yoo, Jae-Hyuck; Lange, Andrew; Bude, Jeff
- Optical Materials Express, Vol. 7, Issue 3
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control
journal, January 2001
- Kuball, M.
- Surface and Interface Analysis, Vol. 31, Issue 10
Carbon impurities and the yellow luminescence in GaN
journal, October 2010
- Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
- Applied Physics Letters, Vol. 97, Issue 15
Photonic materials, structures and devices for Reststrahlen optics
journal, January 2015
- Feng, K.; Streyer, W.; Zhong, Y.
- Optics Express, Vol. 23, Issue 24
Avalanche Ionization and the Limiting Diameter of Filaments Induced by Light Pulses in Transparent Media
journal, October 1972
- Yablonovitch, Eli; Bloembergen, N.
- Physical Review Letters, Vol. 29, Issue 14
Heteroepitaxy of N-type β-Ga 2 O 3 thin films on sapphire substrate by low pressure chemical vapor deposition
journal, September 2016
- Rafique, Subrina; Han, Lu; Neal, Adam T.
- Applied Physics Letters, Vol. 109, Issue 13
Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime
journal, November 2012
- Shkerdin, G.; Rabbaa, S.; Stiens, J.
- Journal of Physics D: Applied Physics, Vol. 45, Issue 49
Mechanisms of growth and defect properties of epitaxial SiC
journal, September 2014
- La Via, F.; Camarda, M.; La Magna, A.
- Applied Physics Reviews, Vol. 1, Issue 3
Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate
journal, June 2012
- Nakagomi, Shinji; Kokubun, Yoshihiro
- Journal of Crystal Growth, Vol. 349, Issue 1
Laser induced impact ionization in semiconductors: A Monte Carlo study for silicon
journal, April 1996
- Kochman, Boaz; Yeom, Keesoo; Singh, Jasprit
- Applied Physics Letters, Vol. 68, Issue 14
Polarized Raman spectra in β-Ga2O3 single crystals
journal, September 2014
- Onuma, T.; Fujioka, S.; Yamaguchi, T.
- Journal of Crystal Growth, Vol. 401
Blueshifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires
journal, November 2005
- Rao, R.; Rao, A. M.; Xu, B.
- Journal of Applied Physics, Vol. 98, Issue 9
Thermal stress in GaN epitaxial layers grown on sapphire substrates
journal, May 1995
- Kozawa, T.; Kachi, T.; Kano, H.
- Journal of Applied Physics, Vol. 77, Issue 9
Raman tensor elements of β-Ga2O3
journal, November 2016
- Kranert, Christian; Sturm, Chris; Schmidt-Grund, Rüdiger
- Scientific Reports, Vol. 6, Issue 1
High average power, diode pumped petawatt laser systems: a new generation of lasers enabling precision science and commercial applications
conference, June 2017
- Haefner, C. L.; Bayramian, A.; Betts, S.
- SPIE Optics + Optoelectronics, SPIE Proceedings
Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling
journal, December 2016
- Elhadj, Selim; Yoo, Jae-hyuck; Negres, Raluca A.
- Optical Materials Express, Vol. 7, Issue 1
Laser damage mechanisms in conductive widegap semiconductor films
journal, January 2016
- Yoo, Jae-Hyuck; Menor, Marlon G.; Adams, John J.
- Optics Express, Vol. 24, Issue 16
Raman spectra and valence force field of single-crystalline β Ga2O3
journal, November 1982
- Dohy, D.; Lucazeau, G.; Revcolevschi, A.
- Journal of Solid State Chemistry, Vol. 45, Issue 2
Status of NIF laser and high power laser research at LLNL
conference, February 2017
- Bowers, Mark; Wisoff, Jeff; Herrmann, Mark
- SPIE LASE, SPIE Proceedings
Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
journal, August 1997
- Ueda, Naoyuki; Hosono, Hideo; Waseda, Ryuta
- Applied Physics Letters, Vol. 71, Issue 7
Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates
journal, February 2004
- Ahmad, I.; Holtz, M.; Faleev, N. N.
- Journal of Applied Physics, Vol. 95, Issue 4
Works referencing / citing this record:
Gallium Oxide for High‐Power Optical Applications
journal, January 2020
- Deng, Huiyang; Leedle, Kenneth J.; Miao, Yu
- Advanced Optical Materials, Vol. 8, Issue 7
Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure
journal, April 2019
- Li, Zhe; An, Zhiyuan; Xu, Yu
- Journal of Materials Science, Vol. 54, Issue 14
Longitudinal phonon plasmon mode coupling in β -Ga 2 O 3
journal, March 2019
- Schubert, Mathias; Mock, Alyssa; Korlacki, Rafał
- Applied Physics Letters, Vol. 114, Issue 10