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Title: Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling

The optical damage performance of electrically conductive gallium nitride (GaN) and indium tin oxide (ITO) films is addressed using large area, high power laser beam exposures at 1064 nm sub-bandgap wavelength. Analysis of the laser damage process assumes that onset of damage (threshold) is determined by the absorption and heating of a nanoscale region of a characteristic size reaching a critical temperature. We use this model to rationalize semi-quantitatively the pulse width scaling of the damage threshold from picosecond to nanosecond timescales, along with the pulse width dependence of the damage threshold probability derived by fitting large beam damage density data. Multi-shot exposures were used to address lifetime performance degradation described by an empirical expression based on the single exposure damage model. A damage threshold degradation of at least 50% was observed for both materials. Overall, the GaN films tested had 5-10 × higher optical damage thresholds than the ITO films tested for comparable transmission and electrical conductivity. This route to optically robust, large aperture transparent electrodes and power optoelectronics may thus involve use of next generation widegap semiconductors such as GaN.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Physical and Life Sciences and NIF and Photon Sciences
Publication Date:
Report Number(s):
LLNL-JRNL-706843
Journal ID: ISSN 2159-3930
Grant/Contract Number:
AC52-07NA27344; 15-ERD-057
Type:
Accepted Manuscript
Journal Name:
Optical Materials Express
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2159-3930
Publisher:
Optical Society of America (OSA)
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1367998