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Title: Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 nm

Abstract

Abstract Two narrow bandgap non‐fullerene acceptors (NBG‐NFAs), namely, COTIC‐4F and SiOTIC‐4F, are designed and synthesized for the fabrication of efficient near‐infrared organic solar cells (OSCs). The chemical structures of the NBG‐NFAs contain a D′‐D‐D′ electron‐rich internal core based on a cyclopentadithiophene (or dithienosilole) (D) and alkoxythienyl (D′) core, end‐capped with the highly electron‐deficient unit 2‐(5,6‐difluoro‐3‐oxo‐2,3‐dihydro‐1H‐inden‐1‐ylidene)malononitrile (A), ultimately providing a A‐D′‐D‐D′‐A molecular configuration that enhances the intramolecular charge transfer characteristics of the excited states. One can thereby reduce the optical bandgap ( E g opt ) to as low as ≈1.10 eV, one of the smallest values for NFAs reported to date. In bulk‐heterojunction (BHJ) OSCs, NBG‐NFA blends with the polymer donor PTB7‐Th yield power conversion efficiencies (PCE) of up to 9.0%, which is particularly high when compared against a range of NBG BHJ blends. Most significantly, it is found that, despite the small energy loss ( E g opt − e V OC ) of 0.52 eV, the PTB7‐Th/NBG‐NFA bulk heterojunction blends can yield short‐circuit current densities of up to 22.8 mA cm −2 , suggesting that the design and application of NBG‐NFA materials have substantial potential to further improve the PCE of OSCs.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [1];  [1];  [2];  [1]; ORCiD logo [1]
  1. Center for Polymers and Organic Solids Department of Chemistry and Department of Biochemistry University of California at Santa Barbara Santa Barbara CA 93106 USA
  2. Center for Advanced Soft Electronics Department of Chemical Engineering Pohang University of Science and Technology Pohang 37673 Korea
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1457792
Grant/Contract Number:  
DE‐AC02‐05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Energy Materials
Additional Journal Information:
Journal Name: Advanced Energy Materials Journal Volume: 8 Journal Issue: 24; Journal ID: ISSN 1614-6832
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Lee, Jaewon, Ko, Seo‐Jin, Seifrid, Martin, Lee, Hansol, Luginbuhl, Benjamin R., Karki, Akchheta, Ford, Michael, Rosenthal, Katie, Cho, Kilwon, Nguyen, Thuc‐Quyen, and Bazan, Guillermo C. Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 nm. Germany: N. p., 2018. Web. doi:10.1002/aenm.201801212.
Lee, Jaewon, Ko, Seo‐Jin, Seifrid, Martin, Lee, Hansol, Luginbuhl, Benjamin R., Karki, Akchheta, Ford, Michael, Rosenthal, Katie, Cho, Kilwon, Nguyen, Thuc‐Quyen, & Bazan, Guillermo C. Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 nm. Germany. https://doi.org/10.1002/aenm.201801212
Lee, Jaewon, Ko, Seo‐Jin, Seifrid, Martin, Lee, Hansol, Luginbuhl, Benjamin R., Karki, Akchheta, Ford, Michael, Rosenthal, Katie, Cho, Kilwon, Nguyen, Thuc‐Quyen, and Bazan, Guillermo C. Thu . "Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 nm". Germany. https://doi.org/10.1002/aenm.201801212.
@article{osti_1457792,
title = {Bandgap Narrowing in Non‐Fullerene Acceptors: Single Atom Substitution Leads to High Optoelectronic Response Beyond 1000 nm},
author = {Lee, Jaewon and Ko, Seo‐Jin and Seifrid, Martin and Lee, Hansol and Luginbuhl, Benjamin R. and Karki, Akchheta and Ford, Michael and Rosenthal, Katie and Cho, Kilwon and Nguyen, Thuc‐Quyen and Bazan, Guillermo C.},
abstractNote = {Abstract Two narrow bandgap non‐fullerene acceptors (NBG‐NFAs), namely, COTIC‐4F and SiOTIC‐4F, are designed and synthesized for the fabrication of efficient near‐infrared organic solar cells (OSCs). The chemical structures of the NBG‐NFAs contain a D′‐D‐D′ electron‐rich internal core based on a cyclopentadithiophene (or dithienosilole) (D) and alkoxythienyl (D′) core, end‐capped with the highly electron‐deficient unit 2‐(5,6‐difluoro‐3‐oxo‐2,3‐dihydro‐1H‐inden‐1‐ylidene)malononitrile (A), ultimately providing a A‐D′‐D‐D′‐A molecular configuration that enhances the intramolecular charge transfer characteristics of the excited states. One can thereby reduce the optical bandgap ( E g opt ) to as low as ≈1.10 eV, one of the smallest values for NFAs reported to date. In bulk‐heterojunction (BHJ) OSCs, NBG‐NFA blends with the polymer donor PTB7‐Th yield power conversion efficiencies (PCE) of up to 9.0%, which is particularly high when compared against a range of NBG BHJ blends. Most significantly, it is found that, despite the small energy loss ( E g opt − e V OC ) of 0.52 eV, the PTB7‐Th/NBG‐NFA bulk heterojunction blends can yield short‐circuit current densities of up to 22.8 mA cm −2 , suggesting that the design and application of NBG‐NFA materials have substantial potential to further improve the PCE of OSCs.},
doi = {10.1002/aenm.201801212},
journal = {Advanced Energy Materials},
number = 24,
volume = 8,
place = {Germany},
year = {Thu Jun 28 00:00:00 EDT 2018},
month = {Thu Jun 28 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
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https://doi.org/10.1002/aenm.201801212

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