Efficiency increased to 15.2% for ultra-thin Cu(In,Ga)Se2 solar cells
Abstract
Abstract We improved the efficiency of ultra‐thin (0.49‐μm‐thick) Cu(In,Ga)Se 2 solar cells to 15.2% (officially measured). To achieve these results, we modified growth conditions from the 3‐stage process but did not add post‐deposition treatments or additional material layers. The increase in device efficiency is attributed to a steeper Ga gradient in the CIGS with higher Ga content near the Mo back contact, which can hinder electron‐hole recombination at the interface. We discuss device measurements and film characterization for ultra‐thin CIGS. Modeling is presented that shows the route to even higher efficiencies for devices with CIGS thicknesses of 0.5 μm.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1479872
- Alternate Identifier(s):
- OSTI ID: 1455074
- Report Number(s):
- NREL/JA-5K00-70468
Journal ID: ISSN 1062-7995
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Progress in Photovoltaics
- Additional Journal Information:
- Journal Volume: 26; Journal Issue: 11; Journal ID: ISSN 1062-7995
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Cu(In,Ga)Se2; CIGS; photovoltaic cells; thin films; semiconductor device modeling; current-voltage characteristics
Citation Formats
Mansfield, Lorelle M., Kanevce, Ana, Harvey, Steven P., Bowers, Karen A., Beall, Carolyn L., Glynn, Stephen, and Repins, Ingrid L. Efficiency increased to 15.2% for ultra-thin Cu(In,Ga)Se2 solar cells. United States: N. p., 2018.
Web. doi:10.1002/pip.3033.
Mansfield, Lorelle M., Kanevce, Ana, Harvey, Steven P., Bowers, Karen A., Beall, Carolyn L., Glynn, Stephen, & Repins, Ingrid L. Efficiency increased to 15.2% for ultra-thin Cu(In,Ga)Se2 solar cells. United States. https://doi.org/10.1002/pip.3033
Mansfield, Lorelle M., Kanevce, Ana, Harvey, Steven P., Bowers, Karen A., Beall, Carolyn L., Glynn, Stephen, and Repins, Ingrid L. Tue .
"Efficiency increased to 15.2% for ultra-thin Cu(In,Ga)Se2 solar cells". United States. https://doi.org/10.1002/pip.3033. https://www.osti.gov/servlets/purl/1479872.
@article{osti_1479872,
title = {Efficiency increased to 15.2% for ultra-thin Cu(In,Ga)Se2 solar cells},
author = {Mansfield, Lorelle M. and Kanevce, Ana and Harvey, Steven P. and Bowers, Karen A. and Beall, Carolyn L. and Glynn, Stephen and Repins, Ingrid L.},
abstractNote = {Abstract We improved the efficiency of ultra‐thin (0.49‐μm‐thick) Cu(In,Ga)Se 2 solar cells to 15.2% (officially measured). To achieve these results, we modified growth conditions from the 3‐stage process but did not add post‐deposition treatments or additional material layers. The increase in device efficiency is attributed to a steeper Ga gradient in the CIGS with higher Ga content near the Mo back contact, which can hinder electron‐hole recombination at the interface. We discuss device measurements and film characterization for ultra‐thin CIGS. Modeling is presented that shows the route to even higher efficiencies for devices with CIGS thicknesses of 0.5 μm.},
doi = {10.1002/pip.3033},
journal = {Progress in Photovoltaics},
number = 11,
volume = 26,
place = {United States},
year = {Tue Jun 19 00:00:00 EDT 2018},
month = {Tue Jun 19 00:00:00 EDT 2018}
}
Web of Science
Figures / Tables:
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