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Title: Formation chemistry of polycrystalline Cu(InGa)Se{sub 2} thin-film absorbers prepared by selenization of Cu-Ga/In stacked precursor layers with H{sub 2}Se gas

Book ·
OSTI ID:417673
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  1. Showa Shell Sekiyu K.K., Atsugi, Kanagawa (Japan). Central R and D Lab.

The purpose of this study is to improve the reliability and reproducibility of the fabrication process for polycrystalline Cu(InGa)Se{sub 2} (CIGS) thin-film absorbers and to make a better absorber with higher efficiency. The current baseline process of selenization has been evaluated through the investigation of the formation chemistry of the device-quality CIGS thin-film absorbers with a graded band-gap structure. It has been verified that the current selenization process has been performed in a good balancing point with both Cu/III ratio and thickness of the precursor layer and the total amount of Se through H{sub 2}Se gas incorporated from the surface during the selenization. A simplified model to explain the formation chemistry of the selenization in this study has been proposed.

OSTI ID:
417673
Report Number(s):
CONF-960401-; ISBN 1-55899-329-0; TRN: IM9705%%46
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Thin films for photovoltaic and related device applications; Ginley, D. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Catalano, A. [ed.] [Technology Assessment Group, Boulder, CO (United States)]; Schock, H.W. [ed.] [Univ. Stuttgart (Germany)]; Eberspacher, C. [ed.] [Unisun, Newbury Park, CA (United States)]; Peterson, T.M. [ed.] [Electric Power Research Inst., Palo Alto, CA (United States)]; Wada, Takahiro [ed.] [Matsushita Electric Industries Co., Ltd., Kyoto (Japan)]; PB: 621 p.; Materials Research Society symposium proceedings, Volume 426
Country of Publication:
United States
Language:
English