Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review
Abstract
Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4eV . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.
- Authors:
-
[3];
[1]
- Morgan State Univ., Baltimore, MD (United States). Dept. of Physics and Engineering Physics
- Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science and Engineering
- National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Materials Science Measurement Div.
- Morgan State Univ., Baltimore, MD (United States). Dept. of Civil Engineering
- Publication Date:
- Research Org.:
- Morgan State Univ., Baltimore, MD (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1435171
- Grant/Contract Number:
- NA0000720
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Micromachines
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 9; Journal ID: ISSN 2072-666X
- Publisher:
- MDPI
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lan, Yucheng, Li, Jianye, Wong-Ng, Winnie, Derbeshi, Rola M., Li, Jiang, and Lisfi, Abdellah. Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review. United States: N. p., 2016.
Web. doi:10.3390/mi7090121.
Lan, Yucheng, Li, Jianye, Wong-Ng, Winnie, Derbeshi, Rola M., Li, Jiang, & Lisfi, Abdellah. Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review. United States. https://doi.org/10.3390/mi7090121
Lan, Yucheng, Li, Jianye, Wong-Ng, Winnie, Derbeshi, Rola M., Li, Jiang, and Lisfi, Abdellah. Tue .
"Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review". United States. https://doi.org/10.3390/mi7090121. https://www.osti.gov/servlets/purl/1435171.
@article{osti_1435171,
title = {Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review},
author = {Lan, Yucheng and Li, Jianye and Wong-Ng, Winnie and Derbeshi, Rola M. and Li, Jiang and Lisfi, Abdellah},
abstractNote = {Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4eV . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.},
doi = {10.3390/mi7090121},
journal = {Micromachines},
number = 9,
volume = 7,
place = {United States},
year = {Tue Aug 23 00:00:00 EDT 2016},
month = {Tue Aug 23 00:00:00 EDT 2016}
}
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