P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4890238· OSTI ID:22311141

Li, Baikui; Tang, Xi; Wang, Jiannong ^[1]

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1. Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.

• OSTI ID: 22311141
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
DISTRIBUTION
ELECTRODES
ELECTROLUMINESCENCE
ELECTRON MOBILITY
EQUIPMENT
FERMI LEVEL
GALLIUM NITRIDES
GOLD
IONIZATION
LIGHT EMITTING DIODES
METALS
NICKEL
PLATINUM
SCHOTTKY BARRIER DIODES
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS
ULTRAVIOLET RADIATION
VISIBLE RADIATION