Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

Shirkhorshidian, A.; Bishop, N. C.; Dominguez, J.; Grubbs, R. K.; Wendt, J. R.; Lilly, M. P.; Carroll, M. S.

doi:10.1088/0957-4484/26/20/205703

Title: Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

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Abstract

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source–drain voltage and non-linear dependence on gate bias. Effects such as Fowler–Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15–20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.

Authors:: Shirkhorshidian, A.; Bishop, N. C.; Dominguez, J.; Grubbs, R. K.; Wendt, J. R.; Lilly, M. P.; Carroll, M. S.

Publication Date:: Thu Apr 30 00:00:00 EDT 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1238970

Alternate Identifier(s):: OSTI ID: 1238972; OSTI ID: 1427208

Report Number(s):: SAND-2015-0022J
Journal ID: ISSN 0957-4484

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Published Article

Journal Name:: Nanotechnology

Additional Journal Information:: Journal Name: Nanotechnology Journal Volume: 26 Journal Issue: 20; Journal ID: ISSN 0957-4484

Publisher:: IOP Publishing

Country of Publication:: United Kingdom

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats


                    Shirkhorshidian, A., Bishop, N. C., Dominguez, J., Grubbs, R. K., Wendt, J. R., Lilly, M. P., and Carroll, M. S. Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants.  United Kingdom: N. p., 2015. 
Web.  doi:10.1088/0957-4484/26/20/205703.

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                    Shirkhorshidian, A., Bishop, N. C., Dominguez, J., Grubbs, R. K., Wendt, J. R., Lilly, M. P., & Carroll, M. S. Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants.  United Kingdom.  https://doi.org/10.1088/0957-4484/26/20/205703

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                    Shirkhorshidian, A., Bishop, N. C., Dominguez, J., Grubbs, R. K., Wendt, J. R., Lilly, M. P., and Carroll, M. S. Thu .  
"Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants".  United Kingdom.  https://doi.org/10.1088/0957-4484/26/20/205703.

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@article{osti_1238970,

  title        = {Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants},

  author       = {Shirkhorshidian, A. and Bishop, N. C. and Dominguez, J. and Grubbs, R. K. and Wendt, J. R. and Lilly, M. P. and Carroll, M. S.},

  abstractNote = {We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source–drain voltage and non-linear dependence on gate bias. Effects such as Fowler–Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15–20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.},

  doi          = {10.1088/0957-4484/26/20/205703},

  journal      = {Nanotechnology},

  number       = 20,

  volume       = 26,

  place        = {United Kingdom},

  year         = {Thu Apr 30 00:00:00 EDT 2015},

  month        = {Thu Apr 30 00:00:00 EDT 2015}

}

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